BD136/138/140

BD136/138/140
Medium Power Linear and Switching
Applications
Complement to BD135, BD137 and BD139 respectively

TO-126

1. Emitter

2.Collector

3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter
: BD136
: BD138
: BD140

Value
- 45
- 60
- 80

Units
V
V
V

VCEO

Collector-Emitter Voltage

: BD136
: BD138
: BD140

- 45
- 60
- 80

V
V
V

VEBO

Emitter-Base Voltage

-5

IC

Collector Current (DC)

- 1.5

ICP

Collector Current (Pulse)

- 3.0

IB

Base Current

- 0.5

PC

Collector Dissipation (TC=25C)

12.5

PC

Collector Dissipation (Ta=25C)

1.25

TJ

Junction Temperature

150

TSTG

Storage Temperature

- 55 ~ 150

Electrical Characteristics TC=25C unless otherwise noted

Symbol
VCEO(sus)

Parameter
* Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140

Test Condition
IC = - 30mA, IB = 0

Min.

Typ.

Max.

- 45
- 60
- 80

Units
V
V
V

ICBO

Collector Cut-off Current

VCB = - 30V, IE = 0

- 0.1

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 10

hFE1
hFE2
hFE3

* DC Current Gain

VCE = - 2V, IC = - 5mA

VCE = - 2V, IC = - 0.5A
VCE = - 2V, IC = - 150mA

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = - 500mA, IB = - 50mA

VBE(on)

* Base-Emitter ON Voltage

VCE = - 2V, IC = - 0.5A

25
25
40

250
- 0.5

-1

* Pulse Test: PW=350s, duty Cycle=2% Pulsed

hFE Classificntion
Classification

10

16

hFE3

40 ~ 100

63 ~ 160

100 ~ 250

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD136/138/140

Typical Characteristics

100

60
50
40
30
20
10
0
-10

-100

IC = 20 IB

-400
-350

IB

70

-450

IC = 10

hFE, DC CURRENT GAIN

80

VCE(sat)[mV], SATURATION VOLTAGE

-500

VCE = -2V
90

-300
-250
-200
-150
-100
-50
-0
-1E-3

-1000

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

-10

-1.1
-1.0

IC MAX. (Pulsed)

-0.5
-0.4

BD138

-0.2

BD140

-0.3

-0.1

BD136

IC[A], COLLECTOR CURRENT

-0.6

-1

DC

)
(on V
V BE
5
=V CE

-0.7

-0.8

10us

IC MAX. (Continuous)

0u
10

t)
(sa
V BE 0 I B
1
IC =

-0.9

1 ms

VBE[V], BASE-EMITTER VOLTAGE

-0.01

-0.01

-0.1
-1E-3

-0.01

-0.1

-1

-10

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Voltage

Figure 4. Safe Operating Area

20.0

PC[W], POWER DISSIPATION

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD136/138/140

Package Demensions

8.00 0.30

11.00

3.20 0.10

0.20

3.25 0.20

14.20MAX

3.90

0.10

TO-126

(1.00)

(0.50)

0.75 0.10

#1
2.28TYP
[2.280.20]

2.28TYP
[2.280.20]

16.10

0.30

13.06

0.75 0.10

0.20

1.75 0.20

1.60 0.10

+0.10

0.50 0.05

Dimensions in Millimeters
2000 Fairchild Semiconductor International

Rev. A, February 2000