DIODE MODELING FOR MILIMETER WAVE APPLICATIONS

BASED ON CO-SIMULATION TECHNIQUE

A. Takacs1, A. Bunea2, A. Zair1, D. Neculoiu2, H. Aubert1
1

CNRS; LAAS; and University of Toulouse; UPS, INSA, INP, ISAE; LAAS ; Toulouse, France
E-mail: atakacs@laas.fr, azair@laas.fr
2
IMT Bucharest, Romania
Email: alina.bunea@imt.ro, dan.neculoiu@imt.ro

Abstract This paper addresses the modeling and the

co-simulation technique of millimeter wave Schottky
diode for millimeter wave applications such as
rectennas and detectors. In order to provide accurate
simulation models a co-simulation technique based on
the combination of full-wave electromagnetic
simulations and non-linear circuit modeling is
proposed. The obtained results demonstrates a good
correlation between simulation and measurement and
the proposed methodology can be used for designing
high-performing circuits without expensive and time
consuming prototyping.
Keywords: diode modeling, co-simulation technique,
millimeter wave.

1. INTRODUCTION
Schottky diode is a key element for
developing critical millimeter wave circuits such
as high sensitivity microwave detector or high
efficiency rectennas for RF and microwave
energy harvesting. Mainly in the millimeters
wave range those circuits are based on hybrid
integration of Schottky diodes and other lumped
(capacitor, low noise amplifier connected by
wire bonding or flip-chip technique, etc.) or
distributed (e. e. antenna, filter) components.
Lumped components (i.e. diode, capacitor, etc.)
are usually modeled and simulated using circuit
approach (i.e. Spice model) while the distributed
components are usually modeled using full wave
electromagnetic simulations. The parameters of
high frequencies diodes are not always provided
by manufacturers and for almost of millimeter
wave Schottky diodes a circuit simulation model
is not provided. Nevertheless generic diode
circuit models can sometime be customized and
adapted for the target application using
parameter-extraction technique [1], [2]. Both
electromagnetic and circuit simulations have to
be used in order to accurately design millimeter
wave circuits such as rectennas and detectors.
Thus two simulation approaches can be

envisaged: (i) simulations are performed in (and

piloted by) a circuit simulator (e.g. Agilent ADS
[3] or AWR Microwave Office) or (ii)
simulations are performed in (and piloted by) a
full-wave electromagnetic simulation. The first
approach is faster and more convenient than the
second one for RF band application where
accurate circuit models exist for almost all
distributed components (transmission lines, stubs,
junctions, etc.). Components that must be
simulated by using full wave technique can be
taken into account via imported S-parameter
blocks (previously simulated in commercially
available full wave simulators). The main
drawback of this approach is its intrinsic
accuracy. Some parasitic behaviors as well as
some electromagnetic coupling are not well
modeled and thus the simulation results could be
inaccurate. This becomes disadvantageous mainly
for millimeter wave applications where accurate
simulation models taking into account almost
coupling and parasitic effects are mandatory for
obtaining high-performing circuits without
expensive and time consuming prototyping. The
second method supposes that all the simulations
are performed inside (or piloted by) the full-wave
electromagnetic simulator. This involves the
development of an appropriate modeling
technique (compatible with the use inside of the
full wave electromagnetic simulator) for the
Schottky diode. This paper addresses the cosimulation technique based on the use of
electromagnetic full-wave simulations and circuit
modeling for an accurate Schottky diode
modeling.

2. DIODE MODELING: CIRCUIT

SIMULATION APPROACH
The generic Spice model of a Schottky diode
is shown in Fig. 1. The main elements of this
generic model are: series resistance (Rs), non

978-1-4673-0738-3/12/$31.00 2012 IEEE

201

linear current source (Id) and capacitance (Cd),

packaging capacitance (Cp) and inductance (Lp).
This model can be used in linear or nonlinear
modes.

Fig. 1. Generic circuit (Spice) model for a Schottky diode

(top) and the ADS simulation model based on a modified
generic [4] model (bottom).

Non linear current source Id is described by

the following non linear equation:

qVd
I d = I s e NkT 1

(1)

where:
- Is is the saturation current;
- N is the ideality factor;
- q=1.6 10-19 C is the electron charge;
- T is the temperature of the junction;
- k=1.38 10-23 J/K is Boltzmanns constant.
The model in Fig. 1 can be simplified by
using an equivalent RC circuit, by neglecting
packaging capacitance and inductance and by
transforming the remaining circuits in an
equivalent RC series circuit. This simplified
equivalent circuit can be easily incorporated in
almost commercially available full-wave
electromagnetic simulator (e.g. HFSS, FEKO)
but it is accurate only for linear or quasi-linear
problems. Another solution, more appropriate for
non linear problems, involves the use of a
generic model available in a circuit simulator
(e.g. Agilent ADS [3], AWR Microwave Office).
Harmonic balance simulations should be
performed by using circuit simulators tools and
the derived large signal S-parameters have to be
injected in the electromagnetic simulator as a
black box.

3. CO-SIMULATION SIMULATION
TECHNIQUE
The proposed co-simulation
consists of the following steps:

technique

- the diode is modeled by using a series

(equivalent) RC circuit (small signal/quasi
linear problems) or by using a generic diode
model (large signal/non linear problems)
available in a commercially circuit simulator
software. The parameters required for those
models should be derived from the datasheet
(if provided) and extrapolated from I-V
characteristic of the diode (if not provided in
the datasheet);
- the diode model is incorporated into a fullwave electromagnetic software as boundary
condition (lumped RLC circuit) or as large
signal S-parameter box (obtained by a
harmonic balance simulation using a generic/
customized diode model)
A Schottky barrier diode M/A-COM
MA4E1317 [5] was used to validate the proposed
methodology for both simulation and experiment.
As specified in the datasheet (typical values) the
total capacitance (the sum of the junction
capacitance and parasitic capacitance) is 0.045 pF
at 0V and 1 MHz and series resistance for a
forward current of 10mA (determined by
measuring the dynamic resistance and subtracting
the junction resistance of 2.6 ) is around 4 .
These values are used for extracting the
equivalent RC circuit of the diode.
A test structure (Fig. 2) on high resistivity
silicon wafer (thickness: 400 m) has been
fabricated at CNRS LAAS using a standard micro
technology process. This structure consists of a
standard 50 CPW line (strip width: 100 m,
gap width: 50 m) with pads accommodated for
connecting diode.

Fig. 2. Photo of the test structure layout without diode.

4. RESULTS
The test structure of Fig.2 was firstly
measured (without diode) at IMT Bucharest using
a Vector Network Analyzer (Anritsu ME7808A).
Then the diode was mounted (by flip chip) and
several measurements were performed (for two
level of RF power: 0 dBm and -10 dBm and for
two forward biasing current: 100 A and
1000 A). The obtained results are summarized

202

in Fig. 3. A standard SOLT calibration has been

performed and the measurement results
presented in Fig. 3 includes both the diode and
test structure effects.
S11

without diode
SD 100uA 0dBm
SD 100uA -10dBm
SD 1000uA 0dBm
SD 1000uA -10dBm

-5

dB

equivalent series resistance: Res and equivalent

capacitance: Ces) was derived in order to fit
simulation and experimental results.

-10
-15
-20

10

15
20
25
Frequency [GHz]

30

35

40

S12

0
-10
dB

-20

without diode
SD 100uA 0 dBm
SD 100uA -10dBm
SD 1000uA 0dBm
SD 1000uA -10dBm

-30
-40
-50

10

15
20
25
Frequency [GHz]

30

35

40

Fig. 3. S-parameters (experimental results)

for MA4E1317 diode.

Electromagnetic simulation performed using

HFSS software [6] has been performed for the
test structure without the diode. Fig. 4 compares
the simulated and experimental results obtained
in this case.

Fig. 4. S-parameters for the test structure: experimental

results (continuous line, no symbol) and full-wave
simulation obtained with HFSS (continuous line, star
symbol).

Based on the values provided by the datasheet

a simple series RC circuit (composed by

Fig. 5. S-parameters for the test structure: experimental

results (continuous line, no symbol) and full-wave
electromagnetic simulation obtained with HFSS (continuous
line, circle symbol) using the equivalent series RC circuit
(Res=14 , Ces=0.037pF, no external bias, RF power:
10dBm)

Fig. 6. S-parameters for the test structure: experimental

results (continuous line, no symbol) and full-wave
simulation obtained with HFSS using the equivalent series
RC circuit (Res=14 , Ces=0.055pF, biasing current: 100
mA, RF power: -10 dBm).

As shown in Fig. 5 and Fig. 6 the correlation

203

between simulation and measurements is quite

good and thus the diode can be modeled as a RC
circuit that is very easy to be taken into account
in the full-wave simulation software.
For large signal problems a harmonic balance
simulation was performed in ADS using a
generic diode model with the following
customized parameters: Is=1 pA, Rs=14 ,
N=1.2, Cs=0.045 pF. The obtained large signal
S-parameters have been imported in FEKO [7]
software as S-parameter box and the obtained
results are depicted in the Fig. 7.

AcknowledgementThe authors acknowledge

the support of the European Commission and of
the National Funding Agency from France
(Region Midi-Pyrnes) and Romania (ANCS)
through the MNT-ERA.NET project MEMIS.
References
[1]

[2]
[3]
[4]
[5]
[6]
[7]

Fig. 7. S-parameters for the test structure: experimental

results (continuous line, + symbol) and full-wave simulation
obtained with Feko by importing the large signals Sparameters obtained through ADS (harmonic balance
simulation using the customized generic diode model).

5. CONCLUSION
A co-simulation technique based on a
combination of full-wave electromagnetic and
circuit simulation was proposed. Based on
experimental results an equivalent RC circuit has
been firstly determined. This equivalent circuit is
easily introduced into full wave simulation
software as a boundary condition. This approach
is accurate for linear or quasi-linear problems:
small signal simulations with low level of the
injected RF power and for self-biasing or for low
bias topologies. For large signal simulation a
generic diode model can be customized,
simulated using a non-linear method such as
harmonic balance and then can be imported as an
S-parameter block inside of more complex
structure.

204

Y.H. Liew and J. Joe, Large-signal diode modeling

an alternative parameter-extraction technique, IEEE
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Aug. 2005.
J. Hansen, K. Chang, Diode modeling for rectenna
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2011 IEEE APSURSI
International symposium, pp. 10771080.
Agilent ADS2011, www.agilent.com
Custom Modeling with Symbolically-Defined
Devices, available on www.agilent.com
MA4E1317
datasheet,
available
on
https://www.macomtech.com/datasheets/MA4E1317
_18_19_2160.pdf
Ansys HFSS v.14, www.ansys.com
FEKO v6.1, www.feko.info