SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A

TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak offState Voltage

: VDRM = 400, 600V

l R.M.S OnState Current

: IT (RMS) = 12A

l High Commutating (dv / dt)

l Isolation Voltage

: VIsol = 1500V AC

MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage

SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A

SYMBOL

V
600

IT (RMS)

Peak One Cylce Surge OnState

Current (NonRepetitive)

ITSM

UNIT

400
VDRM

R. M. S. Ontate Current
(Full Sine Waveform TC = 72C)

I t Limit Value

RATING

12
120 (50Hz)
132 (60Hz)

A
A
2

I t

72

A s

Critical Rate of Rise of On-State

Current
(Note 1)

di / dt

50

A / s

Peak Gate Power Dissipation

PGM

PG (AV)

0.5

Peak Gate Voltage

VFGM

10

Peak Gate Current

IGM

Average Gate Power Dissipation

Junction Temperature

Tj

40~125

Storage Temperature Range

Tstg

40~125

Isolation Voltage (AC, t = 1min.)

VIsol

1500

JEDEC
JEITA
TOSHIBA
Weight: 1.7g

1310H1A

Note 1: di / dt test condition

VDRM = 0.5 Rated
ITM 17A
tgw 10s
tgr 250ns
igp = IGT 2.0

2001-07-10

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25C)
CHARACTERISTIC

SYMBOL

MIN

TYP.

MAX

UNIT

20

T2 (+) , Gate (+)

1.5

T2 (+) , Gate ()

1.5

T2 () , Gate ()

1.5

IV

T2 () , Gate (+)

T2 (+) , Gate (+)

30

II

T2 (+) , Gate ()

30

III

T2 () , Gate ()

30

T2 () , Gate (+)

T2 (+) , Gate (+)

20

II

T2 (+) , Gate ()

20

III

T2 () , Gate ()

20

IV

T2 () , Gate (+)

Repetitive Peak OffState Current

IDRM

TEST CONDITION
VDRM = Rated

I
II

Gate Trigger Voltage

III

SM12GZ47
SM12JZ47

IV

Gate Trigger
Current

I
SM12GZ47A
SM12JZ47A

VGT

IGT

VD = 12V,
RL = 20

VD = 12V,
RL = 20

mA

Peak OnState Voltage

VTM

ITM = 17A

1.5

Gate NonTrigger Voltage

VGD

VD = Rated, Tc = 125C

0.2

VD = 12V, ITM = 1A

50

mA

Junction to Case, AC

3.0

C / W

300

200

10

Holding Current

IH

Thermal Resistance
Critical Rate of
Rise of OffState
Voltage
Critical Rate of
Rise of OffState
Voltage at
Commutation

Rth (jc)
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A

dv / dt

(dv / dt) c

VDRM = Rated, Tj = 125C

Exponential Rise

VDRM = 400V, Tj = 125C

(di / dt) c = 6.5A / ms

V / s

V / s
4

MARKING
*NUMBER
*1
*2

SYMBOL

MARK

TOSHIBA PRODUCT MARK

TYPE

*3

SM12GZ47, SM12GZ47A

M12GZ47

SM12JZ47, SM12JZ47A

M12JZ47

SM12GZ47A, SM12JZ47A

Example
8A: January 1998
8B: February 1998
8L: December 1998

*4

2001-07-10

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A

2001-07-10

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A

2001-07-10

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2001-07-10