Professional Documents
Culture Documents
14W Hi-Fi Audio Amplifier: Description
14W Hi-Fi Audio Amplifier: Description
Pentawatt
Parameter
Vs
Supply voltage
Value
Unit
18 (36)
Vi
Input voltage
Vi
15
Io
3.5
20
-40 to 150
Ptot
Tstg, Tj
Vs
V
TYPICAL APPLICATION
June 1998
1/12
TDA2030
PIN CONNECTION (top view)
+VS
OUTPUT
-VS
INVERTING INPUT
NON INVERTING INPUT
TEST CIRCUIT
2/12
TDA2030
THERMAL DATA
Symbol
Rth j-case
Parameter
Thermal resistance junction-case
Value
Unit
C/W
max
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = 14V , Tamb = 25C unless otherwise
specified) for single Supply refer to fig. 15 Vs = 28V
Symbol
Parameter
Vs
Supply voltage
Id
Ib
Vos
Ios
Po
Output power
Test conditions
Distortion
Power Bandwidth
(-3 dB)
Ri
Gv
Gv
eN
iN
SVR
Id
Typ.
Max.
Unit
18
36
40
60
mA
0.2
20
mV
20
200
nA
6
12
d = 0.5%
Gv = 30 dB
f = 40 to 15,000 Hz
RL = 4
RL = 8
d = 10%
f = 1 KHz
RL = 4
RL = 8
Min.
12
8
14
9
W
W
18
11
W
W
Gv = 30 dB
Po = 0.1 to 12W
Gv = 30 dB
RL = 4
f = 40 to 15,000 Hz
0.2
0.5
Po = 0.1 to 8W
Gv = 30 dB
RL = 8
f = 40 to 15,000 Hz
0.1
0.5
Gv = 30 dB
Po = 12W
RL = 4
0.5
f = 1 kHz
29.5
B = 22 Hz to 22 KHz
RL = 4
Gv = 30 dB
Rg = 22 k
Vripple = 0.5 Veff
fripple = 100 Hz
Drain current
Po = 14W
Po = W
RL = 4
RL = 8
40
10 to 140,000
Hz
90
dB
30
30.5
dB
10
80
200
pA
50
dB
900
500
mA
mA
3/12
TDA2030
Figure 1. Output power vs.
supply voltage
4/12
TDA2030
Figure 10. Supply voltage
rejection vs. voltage gain
APPLICATION INFORMATION
Figure 13. Typical amplifier
with split power supply
5/12
TDA2030
APPLICATION INFORMATION (continued)
Figure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = 14V)
6/12
TDA2030
PRACTICAL CONSIDERATIONS
Printed circuit board
The layout shown in Fig. 16 should be adopted by
the designers. If different layouts are used, the
ground points of input 1 and input 2 must be well
decoupled from the ground return of the output in
which a high current flows.
Assembly suggestion
No electrical isolation is needed between the
Component
Recomm.
value
R1
22 k
Increase of gain
R2
680
Increase of gain
R3
22 k
Increase of input
impedance
Decrease of input
impedance
R4
Frequency stability
Danger of osccilat. at
high frequencies
with induct. loads
R5
3 R2
Upper frequency
cutoff
C1
1 F
Input DC
decoupling
Increase of low
frequencies cutoff
C2
22 F
Inverting DC
decoupling
Increase of low
frequencies cutoff
C3, C4
0.1 F
Supply voltage
bypass
Danger of
oscillation
C5, C6
100 F
Supply voltage
bypass
Danger of
oscillation
C7
0.22 F
Frequency stability
Danger of oscillation
C8
D1, D2
1
2 B R1
1N4001
Purpose
Upper frequency
cutoff
Larger than
recommended value
Smaller bandwidth
Smaller than
recommended value
Danger of
oscillation
Larger bandwidth
7/12
TDA2030
SINGLE SUPPLY APPLICATION
Larger than
recommended value
Smaller than
recommended value
Component
Recomm.
value
R1
150 k
Increase of gain
R2
4.7 k
Increase of gain
R3
100 k
Increase of input
impedance
Decrease of input
impedance
R4
Frequency stability
Danger of osccilat. at
high frequencies
with induct. loads
RA/RB
100 k
C1
Purpose
Power Consumption
1 F
Input DC
decoupling
Increase of low
frequencies cutoff
C2
22 F
Inverting DC
decoupling
Increase of low
frequencies cutoff
C3
0.1 F
Supply voltage
bypass
Danger of
oscillation
C5
100 F
Supply voltage
bypass
Danger of
oscillation
C7
0.22 F
Frequency stability
Danger of oscillation
C8
D1, D2
1
2 B R1
1N4001
Upper frequency
cutoff
8/12
Smaller bandwidth
Larger bandwidth
TDA2030
SHORT CIRCUIT PROTECTION
The TDA2030 has an original circuit which limits the
current of the output transistors. Fig. 18 shows that
the maximum output current is a function of the
collector emitter voltage; hence the output transistors work within their safe operating area (Fig. 2).
This function can therefore be considered as being
Fi g ure 1 8. Maximum
ou tpu t c urr en t vs.
voltage [VCEsat] across
each output transistor
THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the
following advantages:
1. An overload on the output (even if it is permanent), or an above limit ambient temperature can
be easily supported since the Tj cannot be
higher than 150C.
2. The heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
There is no possibility of device damage due to
high junction temperature. If for any reason, the
9/12
TDA2030
Figure 20. Output power and
dr ai n cu rre nt vs. case
temperature (RL = 4)
Fi g ure
22.
Maximum
allowable power dissipation
vs. ambient temperature
Dimension : suggestion.
The following table shows the length that
the heatsink in fig. 23 must have for several
values of Ptot and Rth.
Ptot (W)
Length of heatsink
(mm)
Rth of heatsink
( C/W)
10/12
12
60
40
30
4.2
6.2
8.3
TDA2030
PENTAWATT PACKAGE MECHANICAL DATA
mm
DIM.
MIN.
A
C
D
D1
E
E1
F
F1
G
G1
H2
H3
L
L1
L2
L3
L4
L5
L6
L7
L9
M
M1
V4
Dia
inch
TYP.
2.4
1.2
0.35
0.76
0.8
1
3.2
6.6
MAX.
4.8
1.37
2.8
1.35
0.55
1.19
1.05
1.4
3.6
7
10.4
10.4
18.15
15.95
21.6
22.7
1.29
3
15.8
6.6
3.4
6.8
10.05
17.55
15.55
21.2
22.3
17.85
15.75
21.4
22.5
2.6
15.1
6
0.2
4.5
4
4.23
3.75
MIN.
TYP.
0.094
0.047
0.014
0.030
0.031
0.039
0.126
0.260
0.134
0.268
0.396
0.691
0.612
0.831
0.878
0.703
0.620
0.843
0.886
MAX.
0.189
0.054
0.110
0.053
0.022
0.047
0.041
0.055
0.142
0.276
0.409
0.409
0.715
0.628
0.850
0.894
0.051
0.118
0.622
0.260
0.102
0.594
0.236
4.75
4.25
0.008
0.177
0.157
0.167
0.148
0.187
0.167
40 (typ.)
3.65
3.85
0.144
0.152
L
L1
V3
L8
V
V1
M1
R
R
A
C
D1
L5
L2
V4
H2
L3
F
E
E1
V4
H3 H1
G G1
Dia.
F
F1
L7
H2
V4
L6
L9
RESIN BETWEEN
LEADS
11/12
TDA2030
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
12/12