Power Electronics Task 1

1.
2.
3.
4.
5.
6.
7.

Power diodes can be classified as _____________, ____________ and __________

Write any three types of power transisitors.
The three terminals of the MOSFET are ___________, _________ and _________
The three terminals of the IGBT are ___________, _________ and _________
Reverse recovery current in diodes depend on ____________
A DIAC is a two terminal ______ layer device.
As compared to power MOSFET, a BJT has higher ______ loss but lower
_______loss
8. Secondary breakdown occurs in _____ but not in ________
9. Draw the circuit symbol for n channel enhancement type MOSFET
10.Draw the circuit symbol for p channel depletion type MOSFET.
11.Write any one difference between MOSFET and BJT
12.Write any one difference between diode and BJT
13.The voltage and current ratings of a general purpose diodes are ________ and
________
14.The voltage and current ratings of a fast recovery diodes are ________ and
________
15.IGBT has high input impedance like ________ and low on state conduction
losses like _____
16.A forward biased p-n junction has two capacitances ______ and _____
17.Draw the control characteristics for an SCR
18.Draw the control characteristics for an IGBT
19.Write the expression for forced beta in a power transistor
20.Write an expression for ODF in a power transistor
21.Secondary breakdown is basically an _______ dependent phenomenon
22.Power MOSFETs are generally of _________ type.
23.Transistors are connected in series to increase _________________
24.Transistors are connected in parallel to increase ____________
25.A ______ network across the transistor limits the dv/dt of the transistor
26.A _______ limits di/dt of the transistor.