Features

Fast Read Access Time - 150 ns

Fast Byte Write - 200 s or 1 ms
Self-Timed Byte Write Cycle

Internal Address and Data Latches

Internal Control Timer
Automatic Clear Before Write
Direct Microprocessor Control
DATA POLLING
Low Power
30 mA Active Current
100 A CMOS Standby Current
High Reliability
Endurance: 104 or 105 Cycles
Data Retention: 10 Years
5V 10% Supply
CMOS & TTL Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges

16K (2K x 8)
Parallel
EEPROMs
AT28C16

Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmels reliable
(continued)
nonvolatile CMOS technology.

Pin Configurations
Pin Name

Function

A0 - A10

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

DC

Dont Connect
PDIP, SOIC
Top View

29
28
27
26
25
24
23
22
21

14
15
16
17
18
19
20

5
6
7
8
9
10
11
12
13

A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6

A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND

1
2
3
4
5
6
7
8
9
10
11
12

24
23
22
21
20
19
18
17
16
15
14
13

VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3

I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5

A6
A5
A4
A3
A2
A1
A0
NC
I/O0

4
3
2
1
32
31
30

A7
NC
NC
DC
VCC
WE
NC

PLCC
Top View

Note: PLCC package pins 1 and 17

are DONT CONNECT.

Rev. 0540B10/98

The AT28C16 is accessed like a static RAM for the read or

write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for
other operations. Following the initiation of a write cycle,
the device will go to a busy state and automatically clear
and write the latched data using an internal control timer.
The end of a write cycle can be determined by DATA
POLLING of I/O7. Once the end of a write cycle has been
detected, a new access for a read or a write can begin.

The CMOS technology offers fast access times of 150 ns at

low power dissipation. When the chip is deselected the
standby current is less than 100 A.
Atmels 28C16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved
data retention characteristics. An extra 32 bytes of
EEPROM are available for device identification or tracking.

Block Diagram

Absolute Maximum Ratings*

Temperature Under Bias ................................ -55C to +125C
Storage Temperature ..................................... -65C to +150C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V

AT28C16

*NOTICE:

Stresses beyond those listed under Absolute

Maximum Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability

AT28C16
Device Operation
READ: The AT28C16 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high
impedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
BYTE WRITE: Writing data into the AT28C16 is similar to
writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the
last falling edge of WE (or CE); the new data is latched on
the first rising edge. Internally, the device performs a selfclear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a programming operation has been initiated and for the duration
of tWC, a read operation will effectively be a polling operation.
FAST BYTE WRITE: The AT28C16E offers a byte write
time of 200 s maximum. This feature allows the entire
device to be rewritten in 0.4 seconds.
DATA POLLING: The AT28C16 provides DATA POLLING
to signal the completion of a write cycle. During a write

cycle, an attempted read of the data being written results in

the complement of that data for I/O7 (the other outputs are
indeterminate). When the write cycle is finished, true data
appears on all outputs.
WRITE PROTECTION: Inadvertent writes to the device
are protected against in the following ways: (a) V C C
senseif VCC is below 3.8V (typical) the write function is
inhibited; (b) VCC power on delayonce VCC has reached
3.8V the device will automatically time out 5 ms (typical)
before allowing a byte write; and (c) write inhibitholding
any one of OE low, CE high or WE high inhibits byte write
cycles.
CHIP CLEAR: The contents of the entire memory of the
AT28C16 may be set to the high state by the CHIP CLEAR
operation. By setting CE low and OE to 12 volts, the chip is
cleared when a 10 msec low pulse is applied to WE.
D E V I C E I DE NT I F I C A T I O N : A n e x t r a 3 2 b y t e s o f
EEPROM memory are available to the user for device identification. By raising A9 to 12 0.5V and using address
locations 7E0H to 7FFH the additional bytes may be written
to or read from in the same manner as the regular memory
array.

DC and AC Operating Range

AT28C16-15
Operating
Temperature (Case)

Com.

0C - 70C

Ind.

-40C - 85C
5V 10%

VCC Power Supply

Operating Modes
Mode

CE

OE

WE

I/O

Read

VIL

VIL

VIH

DOUT

VIL

VIH

VIL

DIN
High Z

Write

(2)

Standby/Write Inhibit

(1)

VIH

Write Inhibit

VIH

Write Inhibit

VIL

Output Disable

VIH

High Z

VIL

High Z

Chip Erase
Notes:

VIL

VH

(3)

1. X can be VIL or VIH.

2. Refer to AC Programming Waveforms.
3. VH = 12.0V 0.5V

DC Characteristics
Symbol

Parameter

Condition

ILI

Input Load Current

ILO

Max

Units

VIN = 0V to VCC + 1V

10

Output Leakage Current

VI/O = 0V to VCC

10

ISB1

VCC Standby Current CMOS

CE = VCC - 0.3V to VCC + 1.0V

100

Com.

mA

ISB2

VCC Standby Current TTL

CE = 2.0V to VCC + 1.0V

Ind.

mA

30

mA

VCC Active Current AC

f = 5 MHz; IOUT = 0 mA
CE = VIL

Com.

ICC

Ind.

45

mA

VIL

Input Low Voltage

0.8

VIH

Input High Voltage

VOL

Output Low Voltage

IOL = 2.1 mA

VOH

Output High Voltage

IOH = -400 A

Min

2.0

AT28C16

V
.4

2.4

V
V

AT28C16
AC Read Characteristics
AT28C16-15
Symbol

Parameter

tACC

Min

Max

Units

Address to Output Delay

150

ns

(1)

CE to Output Delay

150

ns

(2)

OE to Output Delay

10

70

ns

tDF(3)(4)

CE or OE High to Output Float

50

ns

tOH

Output Hold from OE, CE or Address, whichever occurred first

tCE

tOE

ns

AC Read Waveforms(1)(2)(3)(4)

Notes:

1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.

Input Test Waveforms and

Measurement Level

Output Test Load

tR, tF < 20 ns

Pin Capacitance
f = 1 MHz, T = 25C(1)
Symbol

Typ

Max

Units

Conditions

CIN

pF

VIN = 0V

COUT

12

pF

VOUT = 0V

Note:

1. This parameter is characterized and is not 100% tested.

AC Write Characteristics
Symbol

Parameter

Min

tAS, tOES

Address, OE Set-up Time

10

ns

tAH

Address Hold Time

50

ns

tWP

Write Pulse Width (WE or CE)

100

tDS

Data Set-up Time

50

ns

tDH, tOEH

Data, OE Hold Time

10

ns

tCS, tCH

CE to WE and WE to CE Set-up and Hold Time

ns

tWC

Write Cycle Time

AC Write Waveforms
WE Controlled

CE Controlled

AT28C16

Typ

Max

1000

Units

ns

AT28C16

0.5

1.0

ms

AT28C16E

100

200

AT28C16
Data Polling Characteristics(1)
Symbol

Parameter

tDH

Data Hold Time

tOEH

OE Hold Time

Min

OE to Output Delay

tWR

Write Recovery Time

Notes:

Max

Units

10

ns

10

ns

(2)

tOE

Typ

ns
0

ns

1. These parameters are characterized and not 100% tested.

2. See AC Characteristics.

Data Polling Waveforms

Chip Erase Waveforms

tS = tH = 1 sec (min.)
tW = 10 msec (min.)
VH = 12.0V 0.5V

AT28C16

AT28C16
Ordering Information(1)
ICC (mA)

tACC
(ns)

Active

Standby

Ordering Code

Package

150

30

0.1

AT28C16(E)-15JC
AT28C16(E)-15PC
AT28C16(E)-15SC

32J
24P6
24S

Commercial
(0C to 70C)

45

0.1

AT28C16(E)-15JI
AT28C16(E)-15PI
AT28C16(E)-15SI

32J
24P6
24S

Industrial
(-40C to 85C)

Notes:

Operation Range

1. See Valid Part Numbers table below.

2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the
faster 150 ns TAA offering.
3. The 28C16 ceramic package offerings have been removed. New designs should utilize the 28C256 ceramic offerings.

Valid Part Numbers

The following table lists standard Atmel products that can be ordered.
Device Numbers

Speed

Package and Temperature Combinations

AT28C16

15

JC, JI, PC, PI, SC, SI

AT28C16E

15

JC, JI, PC, PI, SC, SI

AT28C16

Die Products
Reference Section: Parallel EEPROM Die Products

Package Type
32J

32 Lead, Plastic J-Leaded Chip Carrier (PLCC)

24P6

24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)

24S

24 Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)

Die
Options

Blank

Standard Device: Endurance = 10K Write Cycles; Write Time = 1 ms

High Endurance Option: Endurance = 100K Write Cycles; Write Time = 200 s

Packaging Information
32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-018 AA

24P6, 24-Lead, 0.600 Wide, Plastic Dual Inline

Package (PDIP)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-011 AA

.045(1.14) X 45

PIN NO. 1
IDENTIFY

.025(.635) X 30 - 45
.012(.305)
.008(.203)

.050(1.27) TYP

.030(.762)
.015(3.81)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)

.022(.559) X 45 MAX (3X)

.453(11.5)
.447(11.4)
.495(12.6)
.485(12.3)

.020(.508)
.013(.330)

.299(7.60) .420(10.7)
.291(7.39) .393(9.98)
PIN 1 ID

.050(1.27) BSC

.105(2.67)
.092(2.34)

.012(.305)
.003(.076)

.013(.330)
.009(.229)

10

.050(1.27)
.015(.381)

AT28C16

.090(2.29)
MAX

1.100(27.94) REF
.220(5.59)
MAX

.005(.127)
MIN

SEATING
PLANE

.065(1.65)
.015(.381)
.022(.559)
.014(.356)

.161(4.09)
.125(3.18)
.110(2.79)
.090(2.29)

.012(.305)
.008(.203)

24S, 24-Lead, 0.300 Wide, Plastic Gull Wing Small

Outline (SOIC)
Dimensions in Inches and (Millimeters)

0 REF
8

.566(14.4)
.530(13.5)

.021(.533)
.013(.330)

.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS

.616(15.6)
.598(15.2)

PIN
1

.530(13.5)
.490(12.4)

.553(14.0)
.547(13.9)
.595(15.1)
.585(14.9)

.032(.813)
.026(.660)

1.27(32.3)
1.24(31.5)

.065(1.65)
.041(1.04)
.630(16.0)
.590(15.0)
0 REF
15
.690(17.5)
.610(15.5)

AT28C16

11

Atmel Headquarters

Atmel Operations

Corporate Headquarters

Atmel Colorado Springs

2325 Orchard Parkway

San Jose, CA 95131
TEL (408) 441-0311
FAX (408) 487-2600

Europe

1150 E. Cheyenne Mtn. Blvd.

Colorado Springs, CO 80906
TEL (719) 576-3300
FAX (719) 540-1759

Atmel Rousset

Atmel U.K., Ltd.

Coliseum Business Centre
Riverside Way
Camberley, Surrey GU15 3YL
England
TEL (44) 1276-686677
FAX (44) 1276-686697

Zone Industrielle
13106 Rousset Cedex, France
TEL (33) 4 42 53 60 00
FAX (33) 4 42 53 60 01

Asia
Atmel Asia, Ltd.
Room 1219
Chinachem Golden Plaza
77 Mody Road
Tsimshatsui East
Kowloon, Hong Kong
TEL (852) 27219778
FAX (852) 27221369

Japan
Atmel Japan K.K.
Tonetsu Shinkawa Bldg., 9F
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
TEL (81) 3-3523-3551
FAX (81) 3-3523-7581

Fax-on-Demand
North America:
1-(800) 292-8635
International:
1-(408) 441-0732

e-mail
literature@atmel.com

Web Site
http://www.atmel.com

BBS
1-(408) 436-4309
Atmel Corporation 1998.
Atmel Cor poration makes no warranty for the use of its products, other than those expressly contained in the Companys standard warranty which is detailed in Atmels Terms and Conditions located on the Companys website. The Company assumes no responsibility for
any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without
notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual proper ty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmels products are
not authorized for use as critical components in life suppor t devices or systems.
Marks bearing

and/or

are registered trademarks and trademarks of Atmel Corporation.

Terms and product names in this document may be trademarks of others.

Printed on recycled paper.

0540B10/98/xM

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.