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Digital Integrated Circuits
Digital Integrated Circuits
Circuits
A Design Perspective
The Inverter
Introduction
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We will discuss: General properties of an inverter (and logic gates), and inverter
implementation issues in CMOS technology.
General Properties
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V in
V out
CL
V DD
Rp
V out
V out
Properties
1)
High and low outputs = V DD and Ground.
Voltage swing= V DD. High Noise Margins.
2)
Logic Levels are independent of device sizes
(ratioless logic)
3)
In steady state, a path exists from O/P to VDD
or GND. Thus, low output impedance. Less
sensitive to noise.
4)
Input resistance is extremly high, since MOS
gate draws no dc input current. Steady-state
input current ~ zero. An inverter can
theoretically drive infinite number of gates and
be functionally operational. This degrades the
transient response.
5)
In steady-state, no direct path exists between
supply and ground rails. No static power
(ignoring leakage)
Rn
V in = V DD
V in = 0
VOL = 0
VOH = VDD
VM = f(Rn, Rp)
Voltage Transfer
Characteristic
IDp
IDn
IDn
Vin=0
Vin=0
V in=1.5
Vin=1.5
V DSp
V DSp
VGSp=-1
VGSp=-2.5
Vin = V DD +VGSp
IDn = - IDp
Vout = V DD +VDSp
Vout
PMOS
Vi n = 0
Vin = 2.5
Vin = 0.5
Vin = 2
Vin = 1
Vin = 1.5
Vin = 1.5
Vin = 2
Vi n = 2.5
NMOS
Vi n = 1
Vi n = 1.5
Vin = 1
Vi n = 0.5
Vi n = 0
Vout
For a dc operating point to be valid, the currents through NMOS and PMOS devices must be equal
(intersections) {Vin = 0, 0.5, 1, 1.5, 2, 2.5}
Operating points are located either at the high or low output levels. The Voltage Transfer Characteristics (VTC)
exhibit a very narrow transition zone (high gain during switching transient a small change in the input voltage
results in a large output variation)
Vout=Vin
2.5
Vout
NMOS sat
PMOS res
1.5
NMOS sat
PMOS sat
0.5
NMOS res
PMOS sat
0.5
1.5
VM = switching
threshold
NMOS res
PMOS off
2.5
Vin
1.4
1.3
V (V)
1.5
1.2
1.1
1
0.9
0.8
10
VM
rVDD
1+ r
10
Wp/Wn
VM=VDD/2 for comparable high and low noise margins. Thus, r=1.
(W / L ) p = (W / L) n (VDSATn k n ) /(VDSATp k p )
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Increasing strength of NMOS (sizing it up), moves V M closer to GND. Vice versa for PMOS case.
Note: When designing CMOS circuits, it is advisable to balance the strengths of the transistors by
making PMOS wider than NMOS, to obtain large noise margins + symmetrical characteristics.
Vout
VOH
VM
A simplified approach V
in
VOL
VIL
VIH
These expressions make it clear that a high gain in the transition region is very desirable. For infinite gain:
NMH=VDD-VM, NML=VM
Logic gates have the property to restore the proper output logic values despite of non-ideal input
levels.
Inverter Gain
0
-2
-4
-6
gain
-8
-10
-12
-14
-16
-18
0
0.5
1.5
V (V)
in
2.5
0.2
2
0.15
0.1
out
V out (V)
(V)
1.5
1
0.05
0.5
Gain=-1
0
0
0.5
1.5
V (V)
2.5
0
0
0.05
0.1
V (V)
0.15
0.2
in
in
The gain of the inverter actually increases with a reduction of VDD . At a VDD =0.5V, which is just 100mV
above V T of the transistors. So why cant we operate all digital circuits at low V DD values?
Yes, you get lower power consumption. But the delay of the gate drastically increases.
DC characteristics become very sensitive to variations in device parameters such at V T once V DD and
intrinsic voltages become comparable.
The signal swing is reduced. Although this is good for internal noise (crosstalk), this is bad for external
noise sources that do not scale.
Good PMOS
Bad NMOS
1.5
Nominal
Vout(V)
Good NMOS
Bad PMOS
0.5
0
0
0.5
1.5
Vin (V)
2.5
Propagation Delay
V DD
Rp
= 0.69 R onCL
V out
V out
CL
CL
Rn
V in = 0
(a) Low-to-high
V in = V DD
(b) High-to-low