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BD135 / 137 / 139

NPN Epitaxial Silicon Transistor

Features
Complement to BD136, BD138 and BD140 respectively

Applications
Medium Power Linear and Switching
1

1. Emitter

TO-126
2.Collector

3.Base

Ordering Information
Part Number

Marking

BD13516S
BD1356STU
BD13510STU
BD13516STU
BD13716STU
BD13710STU
BD13716S
BD13916STU
BD13910S
BD13916S
BD1396STU
BD13910STU

BD135-16
BD135-6
BD135-10
BD135-16
BD137-16
BD137-10
BD137-16
BD139-16
BD139-10
BD139-16
BD139-6
BD139-10

2007 Fairchild Semiconductor Corporation


BD135 / 137 / 139 Rev. 1.2.0

Package

Packing Method
Bulk

Rail

TO-126 3L

Bulk
Rail
Bulk
Rail

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1

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

August 2013

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted.

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO
IC
ICP
IB

Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current

PC

Device Dissipation

TJ

Junction Temperature
Storage Temperature

TSTG

Value
BD135
BD137
BD139
BD135
BD137
BD139

Units

45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
1.25
150
- 55 to +150

TC = 25C
TA = 25C

V
V
A
A
A
W
W
C
C

Electrical Characteristics
Values are at TC = 25C unless otherwise noted.

Symbol
VCEO(sus)
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)

Parameter

Test Condition
BD135
BD137
BD139

Collector-Emitter Sustaining
Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

Collector-Emitter Saturation Voltage


Base-Emitter On Voltage

IC = 30 mA, IB = 0
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 150 mA
IC = 500 mA, IB = 50 mA
VCE = 2 V, IC = 0.5 A

Min.

Typ.

Max.

45
60
80

25
25
40

Units
V

0.1
10

A
A

250
0.5
1

V
V

hFE Classification
Classification

10

16

hFE3

40 ~ 100

63 ~ 160

100 ~ 250

2007 Fairchild Semiconductor Corporation


BD135 / 137 / 139 Rev. 1.2.0

www.fairchildsemi.com
2

BD135 / 137 / 139 Features

Absolute Maximum Ratings

BD135 / 137 / 139 Features

Typical Performance Characteristics

100

500

60
50
40
30
20
10

100

350
300
250
200
150
100
50
0
1E-3

0
10

400

IB

70

450

IC = 20 IB

hFE, DC CURRENT GAIN

80

IC = 10

VCE(sat)[mV], SATURATION VOLTAGE

V CE = 2V
90

1000

Figure 1. DC current Gain

0.1

10

Figure 2. Collector-Emitter Saturation Voltage

10

1.1
1.0

IC MAX. (Pulsed)

)
(on
V
V BE
=5
V CE

0.7
0.6
0.5
0.4
0.3

100us

0.1

BD139
BD137
BD135

IC[A], COLLECTOR CURRENT

0.8

10us

IC MAX. (Continuous)
s
1m

t)
(sa
V BE 0 I B
1
IC =

0.9

DC

VBE[V], BASE-EMITTER VOLTAGE

0.01

IC[A], COLLECTOR CURRENT

IC [mA], COLLECTOR CURRENT

0.2
0.01

0.1
1E-3

0.01

0.1

10

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Voltage

Figure 4. Safe Operating Area

20.0

PC[W], POWER DISSIPATION

17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2007 Fairchild Semiconductor Corporation


BD135 / 137 / 139 Rev. 1.2.0

www.fairchildsemi.com
3

BD135 / 137 / 139 Features

Physical Dimensions

TO-126 3L





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Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO126AA.pdf.
For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO126AA_BK.pdf.

2007 Fairchild Semiconductor Corporation


BD135 / 137 / 139 Rev. 1.2.0

www.fairchildsemi.com
4

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Solutions for Your Success
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XS

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As used herein:
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life, and (c) whose failure to perform when properly used in
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Definition of Terms
Datasheet Identification

Product Status

Advance Information

Formative / In Design

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I65

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