IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

IS / IECQC 700000
IS / IECQC 750100

An IS/ISO 9002 and IECQ Certified Manufacturer

TO-220 Plastic Package

TIP41, TIP41A, TIP41B, TIP41C

TIP42, TIP42A, TIP42B, TIP42C

Boca Semiconductor Corp

TIP 41, 41A, 41B, 41C
TIP 42, 42A, 42B, 42C

(BSC)

NPN PLASTIC POWER TRANSISTORS

PNP PLASTIC POWER TRANSISTORS

General Purpose Amplifier and Switching Applications

PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

1
2

C
E

DIM

MIN .

A
B
C
D
E
F
G
H
J
K
L
M
N
O

14.42
9.63
3.56

All dimin sions in mm.

1 2

D
G

MAX.

16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DEG 7

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25C
Junction temperature
Collector-emitter saturation voltage
IC = 6 A; IB = 0.6 A
D.C. current gain
IC = 3 A; VCE = 4 V

VCBO
VCEO
IC
Ptot
Tj

41
42
max. 40
max. 40
max.
max.
max.

VCEsat

max.

1.5

hFE

min.
max.

15
75

RATINGS (at TA=25C unless otherwise specified)

Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current

VCBO
VCEO
VEBO
IC

41
42
max. 40
max. 40
max.
max.

http://www.bocasemi.com
Continental Device India Limited

Data Sheet

41A 41B
42A 42B
60
80
60
80
6.0
65
150

41A 41B
42A 42B
60
80
60
80
5.0
6.0

41C
42C
100
100

V
V
A
W
C
V

41C
42C
100
100

V
V
V
A

page: 1
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TIP41, TIP41A, TIP41B, TIP41C

TIP42, TIP42A, TIP42B, TIP42C

Collector current (Peak value)

Base current
Total power dissipation up to TC = 25C
Derate above 25C
Total power dissipation up to TA = 25C
Derate above 25C
Junction temperature
Storage temperature

ICM
IB
Ptot

Tj
Tstg

THERMAL RESISTANCE
From junction to ambient
From junction to case

Rth ja
Rth jc

Ptot

max.
max.
max.
max.
max.
max.
max.

41
42
ICEO
ICEO
ICES

max. 0.7
max.
max.

IEBO

max.

VCEO(sus)* min. 40
VCBO
min. 40
VEBO
min.

IC = 3 A; VCE = 4 V
Small-signal current gain
IC = 0.5 A; VCE = 10 V; f = 1 KHz
Transition frequency
IC = 0.5 A; VCE = 10 V; f = 1 MHz

A
A
W
W/C
W
W/C
C
C

62.5
1.92

CHARACTERISTICS
Tamb = 25C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30 V
IB = 0; VCE = 60 V
VBE = 0; VCE = VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 6 A; IB = 0.6 A
Base-emitter on voltage
IC = 6 A; VCE = 4 V
D.C. current gain
IC = 0.3 A; VCE = 4 V

10
2.0
65
0.52
2.0
0.016
150
65 to +150

C/W
C/W

41A 41B 41C

42A 42B 42C
0.7

0.7
0.4

0.7

1.0
60
60

mA
mA
mA
mA

80
80

100
100

5.0

V
V
V

VCEsat*

max.

1.5

VBE(on)*

max.

2.0

hFE*

min.

30

hFE*

min.
max.

15
75

|h fe|

min.

20

fT

min. (1)

MHz

* Pulse test: pulse width 300 s, duty cycle 2%.

(1) fT = |hfe| ftest

http://www.bocasemi.com

Continental Device India Limited

Data Sheet

page: 2

Page 2 of 3