Conduction of Heat Through Silicon Wafers

using Nichrome Heaters

IDEAS
Advisor Dr. Demetris Geddis

Presented by
Nsilo Z. Greene
Kishore Komirisetty

Introduction
The first presentation focus was on
the equations for heat, current, the
difference in temperature and the
Pcondition.
The second presentation focus on the
steps to developing a finished
product.
Todays presentation will show the
connection to the finished product.

Introduction (cont.)
Presentation I all the graphs and
equations were done in Microsoft
Excel
Presentation II the same graphs and
equations are now derived in
Mathlab.
Todays presentation the graphs and
equations will be derived in Igor Pro
software.

The Calculations
The thickness of the nichrome was calculated using the amount of
heat passing through the material divided by the time it took for the
heat to pass through the material.
First the heat is calculated by taking the current squared times the
electrical resistively of the material times the length divided by the
cross area times time. Q=I2 (pL/A)t.
The current varied from 0 to 5.76E-04 amps, p=1.00E-06, L= 2.12E03, A=2.00E-11 and t=60sec.
The calculated heat was used to calculate the thickness.
The thermal conductivity of the nichrome is multiplied to the highest
temperature minus the lowest temperature divided by the length.
Pcondition=kA[(TH- TC)/L]. kA=11.3, TH=293K, TC varies with the heat
produced and the L = 2.12E-03.
After all calculations were completed and compared the
determination of the thickness is 1E-6 meters of thickness.

Excel
Q
2.50E-03
2.00E-03
H
e
a
t
p
r
o
d
u
c
e
d

1.50E-03
1.00E-03
Q

5.00E-04
0.00E+00

Current

Mathlab

Igor Pro
-3

2.0x10

1.5

1.0

0.5

0.0
0

100

200

300
Current

400

500

600x10

-6

Excel
P
9.00E+00
8.00E+00
7.00E+00
6.00E+00
P
c
o
n
d
i
t
i
o
n

5.00E+00
4.00E+00
3.00E+00
P

2.00E+00
1.00E+00
0.00E+00

Current

Mathlab

Igor Pro
8

Pcond

0
0

100

200

300
Current

400

500

600x10

-6

Gallium arsenide
GaAs has a bandgap of 1.424ev (at
300K)and the best wavelength for this
material from 1470nm to 1560 nm was
graphed in increments of 10nm.
These graphs show the change in
temperature as the wavelength
lengths change.

GaAs bandgap graphs in

Igor Pro
0.818
0.828

0.822

0.816

0.824

Eg(eV)

0.820
Eg(eV)

Eg(eV)

0.826

0.818

0.814

0.812

0.822

0.816
818

820

822
Temperature

824

0.810

826

828
824

826

828

830

830

832
Temperature

834

836

Temperature

0.802
0.812

0.806
0.800

0.808

Eg(eV)

0.804
Eg(eV)

Eg(eV)

0.810

0.802

0.798

0.796

0.806

0.800
834

836

838
Temperature

0.794

840

838

840

842
Temperature

844

846

844

846

848
Temperature

850

Gallium arsenide

800

0.828

0.826
600

Eg(eV)

TemperatureinKelvins

700

500

0.824

400

0.822
300
0

100

200

300
Current

400

500

600x10

-6

818

820

822
Temperature

824

826

Indium phosphide
InP has a bandgap of 1.344ev (at
300K) and the best wavelength for
this material from 1600nm to
1660nm was graphed in increments
of 10nm

0.776

0.772

0.775

0.771

0.774

0.770

0.773
0.772

0.765
0.764

0.769
0.768

0.761

0.766

0.770

0.765

935

940

945
950
Temperature

955

960

0.757

0.761

0.756

0.760

0.755
Eg(eV)

0.762

0.759
0.758
0.757

0.760

935

936

937

938
Temperature

939

940

941

944

945

946

947
Temperature

948

949

950

940

941

942
Temperature

943

944

945

0.752
0.751
0.750

0.754

0.749

0.753

0.748

0.752

0.747

0.751

0.756

939

Eg(eV)

930

0.763
0.762

0.767

0.771

Eg(eV)

0.766

Eg(eV)

Eg(eV)

Eg(eV)

InP bandgap graphs in Igor

Pro

0.746

950

951

952

953
Temperature

954

955

956

954

955

956

957
958
Temperature

959

960

961

Indium phosphide

0.776
800
Temperature in Kelvins

0.775

Eg(eV)

0.774
0.773
0.772
0.771

700
600
500
400
300

0.770
930

935

940

945
950
Temperature

955

960

100

200

300
Current

400

500

-6

600x10

Silicon
Si has a bandgap of 1.12eV (at 300K)
and the best wavelength for this
material from 810nm to 900nm was
graphed in increments of 10nm.

Si bandgap graphs in Igor

Pro

1.530

1.510

1.495

1.475

1.525

1.505

1.490

1.470

1.515

1.500

1.480

1.495

1.510
20
30
Temperature

40

50

50

1.50

1.49

1.45

1.48

1.40
Eg(eV)

1.50

1.47

1.30

1.45

1.25

1.44

1.20
170

175
Temperature

180

185

90

1.455
80

100

90

100
110
Temperature

120

130

110

120

130

140
Temperature

150

160

170

1.430

1.420
1.425

1.415

1.420

1.410

1.415
1.410

180

185

190
Temperature

195

200

205

1.400
1.395
1.390
1.385
1.380
1.375
240

245

250
255
Temperature

260

265

1.405
1.400

1.405
175

190

Eg(eV)

165

70
80
Temperature

1.35

1.46

160

60

Eg(eV)

10

1.465
1.460

1.475

1.490
0

1.485

Eg(eV)

1.520

Eg(eV)

1.480

Eg(eV)

1.500

Eg(eV)

1.515

Eg(eV)

Eg(eV)

1.535

1.400

1.395
205

210

215
220
Temperature

225

230

225

230

235
Temperature

240

245

Silicon
1.535
800

1.530
Temperature in Kelvins

700
Eg(eV)

1.525
1.520
1.515

600
500
400
300

1.510
0

10

20
30
Temperature

40

50

100

200

300
Current

400

500

600x10

-6

The Nichrome Heater

Nichrome Heater