MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 10 KW, R2 10 KW

MUN2111, MMUN2111L,
MUN5111, DTA114EE,
DTA114EM3, NSBA114EF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 10 kW
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PNP Transistors with Monolithic Bias

Resistor Network
PIN CONNECTIONS
This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
Simplifies Circuit Design

Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
SC59
CASE 318D
STYLE 1
XXX MG
G
SOT23
CASE 318
STYLE 6
MAXIMUM RATINGS (TA = 25C)

Rating
XX MG
G
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
XX MG
G
SC70/SOT323
CASE 419
STYLE 3
XX M
SC75
CASE 463
STYLE 1
XX M
SOT723
CASE 631AA
STYLE 1
XM 1
SOT1123
CASE 524AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
XXX
M
G
= Specific Device Code

= Date Code*
= PbFree Package
(Note: Microdot may be in either location)

*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 7
Publication Order Number:

DTA114E/D
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3

Table 1. ORDERING INFORMATION
Part Marking
Package
Shipping
MUN2111T1G, SMUN2111T1G
6A
SC59
(PbFree)
3000 / Tape & Reel
SMUN2111T3G
6A
SC59
(PbFree)
10000 / Tape & Reel
MMUN2111LT1G, SMMUN2111LT1G
A6A
SOT23
(PbFree)
3000 / Tape & Reel
MMUN2111LT3G, SMMUN2111LT3G
A6A
SOT23
(PbFree)
10000 / Tape & Reel
MUN5111T1G, SMUN5111T1G
6A
SC70/SOT323
(PbFree)
3000 / Tape & Reel
DTA114EET1G, NSVDTA114EET1G
6A
SC75
(PbFree)
3000 / Tape & Reel
DTA114EM3T5G, NSVDTA114EM3T5G
6A
SOT723
(PbFree)
8000 / Tape & Reel
SOT1123
(PbFree)
8000 / Tape & Reel
Device
NSBA114EF3T5G
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PD, POWER DISSIPATION (mW)
300
250
(1) SC75 and SC70/SOT323; Minimum Pad
(2) SC59; Minimum Pad
(3) SOT23; Minimum Pad
(4) SOT1123; 100 mm2, 1 oz. copper trace
(5) SOT723; Minimum Pad
200
150
(1) (2) (3) (4) (5)
100
50
0
50
25
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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2

Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
230
338
1.8
2.7
mW
THERMAL CHARACTERISTICS (SC59) (MUN2111)

Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
Derate above 25C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
mW/C
(Note 1)
(Note 2)
RqJA
540
370
C/W
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
RqJL
264
287
C/W
TJ, Tstg
55 to +150
246
400
2.0
3.2
mW
Junction and Storage Temperature Range

THERMAL CHARACTERISTICS (SOT23) (MMUN2111L)
TA = 25C
(Note 1)
(Note 2)
Derate above 25C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
mW/C
(Note 1)
(Note 2)
RqJA
508
311
C/W
Thermal Resistance,
(Note 1)
RqJL
174
208
C/W
TJ, Tstg
55 to +150
202
310
1.6
2.5
mW

THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5111)
TA = 25C
(Note 1)
(Note 2)
Derate above 25C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
mW/C
(Note 1)
(Note 2)
RqJA
618
403
C/W
Thermal Resistance,
(Note 1)
RqJL
280
332
C/W
TJ, Tstg
55 to +150
200
300
1.6
2.4
mW

THERMAL CHARACTERISTICS (SC75) (DTA114EE)
TA = 25C
(Note 1)
(Note 2)
Derate above 25C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
(Note 1)
(Note 2)
mW/C
RqJA
600
400
C/W
TJ, Tstg
55 to +150
260
600
2.0
4.8
mW
THERMAL CHARACTERISTICS (SOT723) (DTA114EM3)

TA = 25C
(Note 1)
(Note 2)
Derate above 25C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
(Note 1)
(Note 2)

1.
2.
3.
4.
FR4 @ Minimum Pad.

FR4 @ 1.0 x 1.0 Inch Pad.
FR4 @ 100 mm2, 1 oz. copper traces, still air.
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3
mW/C
RqJA
480
205
C/W
TJ, Tstg
55 to +150

Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
254
297
2.0
2.4
mW
THERMAL CHARACTERISTICS (SOT1123) (NSBA114EF3)

TA = 25C
(Note 3)
(Note 4)
Derate above 25C
(Note 3)
(Note 4)
Thermal Resistance,
Junction to Ambient
PD
(Note 3)
(Note 4)
Thermal Resistance, Junction to Lead

(Note 3)
1.
2.
3.
4.
mW/C
RqJA
493
421
C/W
RqJL
193
C/W
TJ, Tstg
55 to +150
FR4 @ Minimum Pad.

FR4 @ 1.0 x 1.0 Inch Pad.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise noted)

Characteristic
Symbol
Min
Typ
Max
100
500
0.5
50
50
35
60
0.25
1.2
0.8
2.5
1.8
0.2
4.9
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
CollectorEmitter Cutoff Current

(VCE = 50 V, IB = 0)
ICEO
EmitterBase Cutoff Current

(VEB = 6.0 V, IC = 0)
IEBO
CollectorBase Breakdown Voltage

(IC = 10 mA, IE = 0)
V(BR)CBO
CollectorEmitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)
CollectorEmitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)

(VCE = 0.3 V, IC = 10 mA)
Vi(on)
Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
7.0
10
13
Resistor Ratio
R1/R2
0.8
1.0
1.2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
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4
Vdc
Vdc
Vdc
Vdc
Vdc
kW

TYPICAL CHARACTERISTICS
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3
1000
IC/IB = 10
VCE = 10 V
TA = 25C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
VOLTAGE (V)
25C
75C
0.1
0.01
20
40
60
TA = 75C
100
10
80
25C
25C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
100
f = 10 kHz
lE = 0 A
TA = 25C
7
6
5
4
3
2
1
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
25C
TA = 25C
10
0.1
0.01
0.001
50
75C
VO = 5 V
1
6
7
3
4
5
Vin, INPUT VOLTAGE (V)
100
VO = 0.2 V
TA = 25C
10
25C
75C
1
0.1
Figure 5. Output Current vs. Input Voltage
Figure 4. Output Capacitance
Cob, OUTPUT CAPACITANCE (pF)
10
9
100
10
20
30
40
Figure 6. Input Voltage vs. Output Current
http://onsemi.com
5
50
10

TYPICAL CHARACTERISTICS NSBA114EF3
1000
IC/IB = 10
hFE, DC CURRENT GAIN
25C
25C
150C
0.1
55C
0.01
10
20
30
40
100
55C
10
10
100
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain

100
f = 10 kHz
IE = 0 A
TA = 25C
5
4
3
2
1
10
20
30
40
55C
10
25C
1
0.1
VO = 5 V
0.01
50
150C
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
0.1
50
7
Cob, OUTPUT CAPACITANCE (pF)
150C
VCE = 10 V
VCE(sat), COLLECTOREMITTER
VOLTAGE (V)
25C
10
55C
0.1
150C
VO = 0.2 V
0
10
20
30
40
Figure 11. Input Voltage vs. Output Current
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6
50

PACKAGE DIMENSIONS
SC59
CASE 318D04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
HE
DIM
A
A1
b
c
D
E
e
L
HE
b
e
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118

PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
10
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
mm
inches
0.8
0.031
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8
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10

PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
D
NOTES:
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
HE
1
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A2
MIN
0.80
0.00
A1
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches

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9
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095

PACKAGE DIMENSIONS
SC75/SOT416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
2
3
b 3 PL
0.20 (0.008)
DIM
A
A1
b
C
D
E
e
L
HE
1
M
HE
0.20 (0.008) E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm
inches

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10
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027

PACKAGE DIMENSIONS
SOT723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
X
D
b1
A
Y
E
1
2X
HE
2
2X
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L2
BOTTOM VIEW
RECOMMENDED
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS

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11

PACKAGE DIMENSIONS
SOT1123
CASE 524AA
ISSUE C
X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
Y
1
TOP VIEW
A
DIM
A
b
b1
c
D
E
e
HE
L
L2
HE
SIDE VIEW
3X
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L2
0.08 X Y
e
2X
3X
b1
MILLIMETERS
MIN
MAX
0.34
0.40
0.15
0.28
0.10
0.20
0.07
0.17
0.75
0.85
0.55
0.65
0.35
0.40
0.95
1.05
0.185 REF
0.05
0.15
BOTTOM VIEW
1.20
3X
0.34
0.26
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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DTA114E/D

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 10 KW, R2 10 KW

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MUN2111, MMUN2111L,

PNP Transistors with Monolithic Bias

This series of digital transistors is designed to replace a single

Simplifies Circuit Design

Collector Current Continuous

MAXIMUM RATINGS (TA = 25C)

Input Forward Voltage

Input Reverse Voltage

Stresses exceeding Maximum Ratings may damage the device. Maximum

= Specific Device Code

(Note: Microdot may be in either location)

Semiconductor Components Industries, LLC, 2013

December, 2013 Rev. 7

Publication Order Number:

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3

3000 / Tape & Reel

10000 / Tape & Reel

3000 / Tape & Reel

10000 / Tape & Reel

3000 / Tape & Reel

3000 / Tape & Reel

8000 / Tape & Reel

8000 / Tape & Reel

PD, POWER DISSIPATION (mW)

(1) (2) (3) (4) (5)

AMBIENT TEMPERATURE (C)

Figure 1. Derating Curve

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3

THERMAL CHARACTERISTICS (SC59) (MUN2111)

Junction and Storage Temperature Range

Junction and Storage Temperature Range

Junction and Storage Temperature Range

Junction and Storage Temperature Range

THERMAL CHARACTERISTICS (SOT723) (DTA114EM3)

Junction and Storage Temperature Range

FR4 @ Minimum Pad.

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3

THERMAL CHARACTERISTICS (SOT1123) (NSBA114EF3)

Thermal Resistance, Junction to Lead

FR4 @ Minimum Pad.

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise noted)

CollectorEmitter Cutoff Current

EmitterBase Cutoff Current

CollectorBase Breakdown Voltage

CollectorEmitter Breakdown Voltage (Note 5)

DC Current Gain (Note 5)

Input Voltage (off)

Input Voltage (on)

Output Voltage (on)

Output Voltage (off)

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (mA)

Figure 2. VCE(sat) vs. IC

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 5. Output Current vs. Input Voltage

Figure 4. Output Capacitance

Vin, INPUT VOLTAGE (V)

Cob, OUTPUT CAPACITANCE (pF)

Figure 6. Input Voltage vs. Output Current

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3