Composite dielectric material for

Non-Volatile Memory applications

By
Yo g i n i G D h o p a d e

Under the guidance of

D r. P a w a n K a h o l
D r. K a r t h i k G h o s h
D r. R a m G u p t a
D r. M a n i v a n n a n
 What is a capacitor?
A capacitor is an electrical or electronic device
that stores energy in the electrical field between
two conducting plates.


 Conductors
 Insulator (Dielectric)
 Capacitance
The measure of amount of the electric charge stored
for a given electric potential. It is measured as:
 C=Q/V

 C=εr A/d

 εr is the characteristic of the particular dielectric

medium used.


 The energy stored in a capacitor is given as

 E=VQ/2
 Dielectric constant and Dielectric Material

Dielectric constant is the ratio of the permittivity

of a substance to the permittivity of the free
space
The capacitance created by the material is
directly related to the dielectric constant of the
material.
A dielectric material is an insulator

 Loss Tangent or the Dielectric Loss
 The ratio of the power loss in a dielectric material
to the total power transmitted through the
dielectric, the imperfection of the dielectric.
Equal to the tangent of the loss angle
 V=V exp (jωt)
0
 ω=2πf

 Q=C V
0
 I =dQ/dt=jωC
C 0V
 C=(ε/ ε
0 ) C0 = εr C0
 Q
= ε r C0 V
 I
C =jω εr C0 V
No dielectric material is a perfect insulator, so that
in addition to IC Which leads V by 900, There is a
loss current Il in phase with ‘V’ and the
magnitude


 Il =GV
 Total current through the capacitor is
 I= I
C + Il
 =(jω+G)V
The current ‘I’ leads the voltage by ‘V’ by a phase angle θ


  Cos θ = Il /I
The behavior may be considered in terms of the loss angle


 δ=(900 - θ)

 Tan δ= I / I
l c

= G/ωC
 Tan δ


ε* = εl -i εll
 ε* = εl -i εll
r r r



The loss Tangent Tan δ= εll / εl



The Power loss = πf V2 εl Tan δ

 List of the dielectric constants of the material

List of the material Dielectric constant

Vacuum 1.0
Glass 5-10
Strontium Titanate (STO) 310.00
Titanium Dioxide (TiO2 ) 173
Water 80.4
Air 1.00059
Silicon 12
Silicon dioxide (Si02 ) 4.5
 What are we looking at?

 The aim here is to look for a material that

shows high dielectric constant and low
leakage current.
 Why are we looking at this property?

 The advantage of having a high dielectric constant

is to allow the miniaturization of microelectronic
components.

 Disadvantage

 In the process of increasing the dielectric

constant the leakage current due to
tunneling is increased that leads to huge
power consumption in turn reducing the
reliability of the device
 Background studies
 Electrodes:
 Cu, Ni, Ag, Au, Al, Pt are few that are used as electrodes.


 Substrates:
 Glass, Sapphire, Tin, Silicon , GaAs,LAO


Dielectric materials:


 Barium Strontium Titanate (BST), Hafnium Oxide (HfO) ,

Barium Hafnium Oxide (BHfO), Strontium Titanate
(STO)
 Properties of STO
Strontium Titanate more often called as STO is
an oxide of Strontium and Titanium having the
chemical formula SrTiO3.
STO is resistant to most solvents
The density is 5.13 g/cm3
The melting point of STO is 2080 °C

 Mechanical properties
 The crystal structure of STO is pervoskite.

Sr+2


O2-

Ti4
+
Other Properties
STO’s can be doped with rare earth or
transition metals.


The dielectric constant of STO is 310




 Device Structure


 Pt STO
Electrodes

 Si Substrate
 Optimization of the STO film for Crystal Structure
The film has to be crystalline to obtain good dielectric
properties.
 In order to show the crystalline behavior of STO the
following parameters have to be considered:
Substrate
Thickness of the film
Temperature
Pressure
Heat Treatment
Electrodes


 XRD-X Ray Diffraction

 XRD was done to Optimize the crystal structure and

depending on these results the appropriate substrate
and thickness of the sample was changed. The
Temperature of growth and the Heat- treatment was
also changed depending on the crystal structure
obtained.
XRD of ideal STO(STO powder on Glass)

STO Powder
300 300

(110)
250 250

200 200
L in(Counts)

L in(Counts)
150 150

(200)
100 100

(211)
(111)

(220)
(100)

(310)
50 50

0 0
20 30 40 50 60 70 80

2 Theta
 Substrates

Glass
Quartz
Lanthanum Aluminate
Silicon
 XRD of STO on all the substrates
STO on Si
STO film on Glass
LAO substrate-High Phi 180000 180000
70 70
200000 200000

160000 160000
180000 180000
60 60
160000 160000 140000 140000

50 50 140000 140000 120000 120000

L in (Counts)

L in (Counts)
120000 120000 100000 100000
40 40

L in (Counts)
L in (Counts)
L in (Counts)
L in (Counts)

100000 100000 80000 80000

30 30 80000 80000 60000 60000

60000 60000
20 20 40000 40000
40000 40000
20000 20000
10 10 20000 20000
0 0
0 0 20 30 40 50 60 70 80
0 0 20 30 40 50 60 70 80
2 Theta
2 Theta
20 30 40 50 60 70 80

2 Theta
LAO Substrate-Low Phi
STO film on Quartz 70 70 S TO o n S i
70 70

60 60 100 100
60 60

50 50
50 50 80 80

40 40 40 40

L in (Counts)
L in (Counts)

L in (Counts)

L in (Counts)

60 60

L in (Counts)

L in (Counts)
30 30 30 30
40 40
20 20
20 20

10 10 20 20
10 10

0 0
0 0
0 0
20 30 40 50 60 70 80
20 30 40 50 60 70 80 20 30 40 50 60 70 80
2 Th eta
2 Theta 2 Theta
 Thickness of the film and temperature and
annealing for 1 hr at 650 (C)
0
STO on Glass-20K shots-600 C STO on LAO(L)Post annealing 650
0
C for 1 hr
70 70 1000 1000

60 60
800 800

50 50

L in (Counts)

L in (Counts)
600 600
L in (Counts)

L in (Counts)
40 40

400 400
30 30

200 200
20 20

10 10 0 0
20 30 40 50 60 70 80

2 Theta
0 0
20 30 40 50 60 70 80

2 Theta 0
0 STO on Si(L)Post annealed 650 C for 1 hr
STO on Quartz-20k Shots-600 C 450 450
60 60
400 400

50 50 350 350

300 300

L in (Counts)
40 40

L in (Counts)
L in (Counts)

250 250
L in (Counts)

30 30 200 200

150 150
20 20
100 100

10 10 50 50

0 0
0 0 20 30 40 50 60 70 80
20 30 40 50 60 70 80 2 Theta
2 Theta
STO on Si (20,000) 300(c) O- 10^-3mbar

0 -3
STO on Si(L)-300
C-20K shots under OxygenMBar
10

100 100

80 80

60 60
L in (Counts)

L in (Counts)
40 40

20 20

0 0
20 30 40 50 60 70 80
2 Theta
STO on Si (20,000) at 600(c) and annealed under
Oxygen for 3 min (10^-2 mbar)
0 -2
STO on Si(L) at 600
C and annealed for 3 min in
2
(10
0 MBar)
90 90
85 85
80 80
75 75
70 70
65 65
60 60
55 55
50 50

L in (Counts)
L in (Counts)

45 45
40 40
35 35
30 30
25 25
20 20
15 15
10 10
5 5
0 0
20 30 40 50 60 70 80

X Axis Title
STO on Si (20,000) at 600(c) and annealed under
Oxygen for 3 min (100 mbar)
0
S TO on S i(L ) a t 6C00a nd a nn ea le d fo r 3 m in un2(10
d er0 OM B ar)
50 50

45 45

40 40

35 35

30 30
L in (Counts)

L in (Counts)
25 25

20 20

15 15

10 10

5 5

0 0
20 30 40 50 60 70 80

2 Theta
STO on Si (30,000) at 600(c) and annealed under
Oxygen for 3 min (10^-2 mbar)
STO in Si-30000 Shots-Annealed
30 30
28 28
26 26
24 24
22 22
20 20
18 18
L in (Counts)

L in (Counts)
16 16
14 14
12 12
10 10
8 8
6 6
4 4
2 2
0 0
20 30 40 50 60 70 80

X Axis Title
 Si-STO-Au
Si-STO -Au(Low Phi)
80 80

70 70

60 60

50 50

L in (Counts)
L in (Counts)

40 40

30 30

20 20

10 10

0 0
20 30 40 50 60 70 80

2 Theta
 Pt on Si (12,000) at 300(c)

0
Pt on Si 300 c (12,000 shots)
180000 180000

160000 160000

140000 140000

120000 120000
L in (Counts)

L in (Counts)
100000 100000

80000 80000

60000 60000

40000 40000

20000 20000

0 0
20 30 40 50 60 70 80

2 Theta
 Si-Pt-STO
Si-Pt-STO
350 350

300 300

250 250
L in (Counts)

L in (Counts)
200 200

150 150

100 100

50 50

0 0
20 30 40 50 60 70 80

2 Theta
 C-V measurement and calibration techniques

 HC HP Lp LC


 STO


pt
C-f for thin film and palette
D-f for Thin film and palette
Z-f for thin film and pallete
C-V for thin films and pallets
D-V for thin film and palette
Z-V for thin film and pallet
Studying the properties of SiO2 Pallet
C-f for composite material
D-f
Z-f
C-V
D-V
Z-V
I-V for thin films
I-V for the pallets
 Future Work

Analysis of the Frequency dependence behavior using

Cole-Cole plot


 Applications

Nonvolatile memory
Sensors
Power conditioning
Filters
 THANK YOU