M E

L C O
WE 2 C
O S
T
 GROUP
MEMBERS
• ATHIRA.A • ANILA.P.L
• CHARU.S • BAZARIYA
• SIYA.A • KUMARI
• NANDINI.K • SAJNA
• SWATHY.M.K • SUSHMITHA
• ATHIRA.K • ANUPRIYA
• ARUNIMA.N.V • SANITHA
• VASANTHI.V.C • REMYA
 TOPIC :
SEMICONDUCTORS
INTRODUCTI
ON
Now a days all the
electronic devices
which we use are
based on flow of
electrons which are
made of vacum tube
like diode valve.
 SUBSTANCES

 METALS: The
substances which have high
conductivity & low resistivity

 SEMICONDUCTORS
Subtances which have
conductivity & resistivity in
between metals & insulators

 INSULATOR
Substances which have low
conductivity and high
resistivity.
 ENERGY BANDS
VALANCE BAND : It
is the lower band
beloniging to valance
electrons of the crystal.
And it is capable of
ganing energy .

 CONDUCTION BAND : It
is the upper bant in which
electrons are not present at
zero kelvin.this band is either
empty or partially filled.

 ENERGY BAND GAP ; It

is the separation between
highst energy level of valance
band &lowest energy level in
conduction band.
 E O F S
TY P T O R
D U C
I C O N
S EM TORS
N D U C
M I C O T O R S
I C S E D U C
R I N S I C O N
 I N T S E M
I N S I C
E X T R

 INTRINSIC & EXTRINSIC
• INTRINSIC • EXTRINSIC
SEMICONDUCTOR SEMICONDUCTORS
pure semiconductor which is doped semiconductor with
free of every impurity. suitable impurity atom added
to it.
 EXTRINSIC SEMICONDUCTOR

n- TYPE SEMICONDUCTOR P- TYPE SEMICONDUCTOR

Semiconductor doped with Semiconductor cdoped with tri
penta valent [group 15]it valent impurity will form
will form covalent bond & covalent bond by sharing
one unshared electron electron .Due to deficiency
helps in conduction. of elctron holes help in
conduction
 P-N JUNCTION DIODE
When a p type semiconductor is brought in to
close contact with an n-type semiconductor,
the resulting arrangement is a p-n junction
diode.
o DEPLETION REGION:
The space charge region on both the sides of a p-n
junction which has immobile ions & devoid of any
charge carrier will form a region called depletion region.

oPOTENTIAL BARRIER:
When holes from p-type & electrons from n-type diffuse
into each other a potential barrier is created in between
the two layers.
BIASING OF P-N
JUNCTION
 FORWARD BIASING

 REVERSE BIASING
 TYPES OF BIASING
FORWARD BIASING
p-n junction is said to be
forward biased if the
positive terminal of the
external battery is
connected to n side of a p-n
junction
REVERSE BIASING
P-n junction is said to be
reverse biased if the
positive terminal of the
battery is connected to n
side and negative terminal
to p side of a p-n junction.
DIODE AS RECTIFIER

Rectifier is a device which is used for

converting alternating current to direct
current.

I. HALF WAVE RECTIFIER

II. FULL WAVE RECTIFIER
 P-N JUNCTION DIODE AS
RECTIFIER
HALF WAVE RECTIFIER FULL WAVE RECTIFIER
A device that converts AC A device which convert
power to DC power AC power in to DC
during half cycle of AC power during both half
cycle
 ZENOR DIODE
It is a special purpose highly doped
semiconductor diode that works in the
reverse break down region. The reverse
break down voltage is zenor voltage.
It is used as voltage regulator
 OPTO-ELECTRONIC
DEVICES
• PHOTO DIODE

• LIGHT EMITTING DIODE

• SOLAR CELL
• PHOTO DIODE

Photodiode is an opto electronic device in which

current carriers are generated by photons
through photo excitation ie., photo conduction
by light.
 LIGHT EMITTING DIODE

• Light emitting diode is a photo electronic

device which converts electrical energy into
light energy. It works under forward bias.
 SOLAR
CELL

• Solar cell is a solar energy converter. It is a p-n junction

device which converts solar energy into electrical energy.
Uses: Used for charging storage batteries, used in
artificial satellite to operate for generating electrical
current, calculators, wrist watch etc.
JUNCTION TRANSISTOR
A junction transistor is a transformer of resistance
which can be achieved by interchanging the biasing
across the junction diode.
 TYPE OF JUNCTION TRASISTOR

1. n-p-n TRANSISTOR

2. p-n-p TRANSISTOR
 JUNCTION TRANSISTORS

p-n-p and n-p-n transistor

The emitter based junction is forward bias and the collector
based junction is reverse biased. The resistance of emitter
base is very low while that of collector is very high.
DIFFERENCE BETWEEN n-p-n & p-
n-p
• p-n-p Transistor • n-p-n Transistor
The current in p-n-p In n-p-n transistor the
transistor is carried by current is carried
holes at the same time inside the transistor as
their concentration is well as the external
maintained but in the circuit by the
external circuit it is electrons.
due to flow of
electrons.
TRANSISTOR CHARACTERISTICS
INPUT CHARACTERISTIC OUTPUT CHARACTERISTIC
CURVE CURVE
TRANSISTOR AS
COMMON BASE
AMPLIFIER
TRANSISTOR AS COMMON EMITTER
AMPLIFIER
During positive half cycle of input signal the output
signal voltage at the collector varies through a
negative half cycle. During negative half cycle of
input signal the out put voltage varies through
positive half cycle. But the output signal will be
amplified.
 TRANSISTOR AS AN OSCILLATOR
• Oscillator is a device which
converts energy from DC
source to periodically varying
output. It consist of a
inductance and a capacitance
connected in parallel. The
feed back is maintined from
base circuit and oscillations
are amplified with a phase
difference of 180 degree
between input and output.
 TRANSISTOR AS SWITCH
The transistor when used in the cut off or saturation
state act as switch.
 E S
AT
C G
GI
LO
TYPES OF
GATES
OR GATE

 AND GATE

 NOT GATE
 OR GATE
Symbol & Truth table
 AND GATE
Symbol & Truth table
 NOT GATE
Symbol & Truth table
 COMBINATION OF GATES
i. NAND GATE

ii. NOR GATE

 NAND GATE
Symbol & Truth table
 NOR GATE
SYMBOL & TRUTH TABLE
 POINTS TO REMEMBER
• ENERGY BAND: The range of energy possessed by
an electron in a solid
• DOPING: The process of addition of desirable
impurity to pure semiconductor
• INTRINSIC SEMICONDUCTOR : Pure semiconductor
• EXTRINSIC SEMICONDUCTOR : Doped
semiconductor
• n- TYPE SEMICONDUCTOR : Doped with donor
impurity.
• p- TYPE SEMICONDUCTOR : Doped with acceptor
impurity.
• DEPLETION LATER : A Thin layer between p & n
region of the junction diode devoid of free
electrons and holes .
• RECTIFIER : The device which convert AC to DC
power.
• TRANSISTER : A sandwich arrangement of
different semiconductors.
• OSCILLATOR : It is a device which convert energy
from dc source to varying output.
• LOGIC GATES: Electronic circuit in which output
follows some logical relation with input.
• Important Formulas
• Based on Conductivity of Semiconductors

• 1 In an intrinsic semiconductor ne = nh = ni
• 2 At equilibrium in any semiconductor nenh = ni2
• 3 Mobility of a charge carrier m = v/E
• 4 Electric current I = eA(neve + nhvh)
• 5 Electrical conductivity s = 1/r = e(neme + nhmh)

• Based on p-n Junction

• 1 The dc resistance of a junction diode rdc = V/I

• 2 The dynamic or a.c. resistance of a junction diode rd or rac = dV/dI

• Based on Transistor (i) Characteristics (ii) As an Amplifier

• 1 IE = IC + IB
• 2 For a common base transistor amplifier (i) adc = IC/IE
• 3 Voltage gain for common base transistor amplifier (i) Av = dVCB/dVEB = dICxRo/dIExRi
• (ii)AV = aac Ro/Ri
• 4 Power gain for common base transistor amplifier (i) Ap = dVCE/dVCB x dIC/dIB
• (ii) AP = Av.Ai = aac2R0/Ri
THANKING
YOU