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Wel Com e Tos 2C
Wel Com e Tos 2C
L C O
WE 2 C
O S
T
GROUP
MEMBERS
• ATHIRA.A • ANILA.P.L
• CHARU.S • BAZARIYA
• SIYA.A • KUMARI
• NANDINI.K • SAJNA
• SWATHY.M.K • SUSHMITHA
• ATHIRA.K • ANUPRIYA
• ARUNIMA.N.V • SANITHA
• VASANTHI.V.C • REMYA
TOPIC :
SEMICONDUCTORS
INTRODUCTI
ON
Now a days all the
electronic devices
which we use are
based on flow of
electrons which are
made of vacum tube
like diode valve.
SUBSTANCES
METALS: The
substances which have high
conductivity & low resistivity
SEMICONDUCTORS
Subtances which have
conductivity & resistivity in
between metals & insulators
INSULATOR
Substances which have low
conductivity and high
resistivity.
ENERGY BANDS
VALANCE BAND : It
is the lower band
beloniging to valance
electrons of the crystal.
And it is capable of
ganing energy .
CONDUCTION BAND : It
is the upper bant in which
electrons are not present at
zero kelvin.this band is either
empty or partially filled.
oPOTENTIAL BARRIER:
When holes from p-type & electrons from n-type diffuse
into each other a potential barrier is created in between
the two layers.
BIASING OF P-N
JUNCTION
FORWARD BIASING
REVERSE BIASING
TYPES OF BIASING
FORWARD BIASING REVERSE BIASING
p-n junction is said to be P-n junction is said to be
forward biased if the reverse biased if the
positive terminal of the positive terminal of the
external battery is battery is connected to n
connected to n side of a p-n side and negative terminal
junction to p side of a p-n junction.
DIODE AS RECTIFIER
• SOLAR CELL
• PHOTO DIODE
1. n-p-n TRANSISTOR
2. p-n-p TRANSISTOR
JUNCTION TRANSISTORS
AND GATE
NOT GATE
OR GATE
Symbol & Truth table
AND GATE
Symbol & Truth table
NOT GATE
Symbol & Truth table
COMBINATION OF GATES
i. NAND GATE
• 1 In an intrinsic semiconductor ne = nh = ni
• 2 At equilibrium in any semiconductor nenh = ni2
• 3 Mobility of a charge carrier m = v/E
• 4 Electric current I = eA(neve + nhvh)
• 5 Electrical conductivity s = 1/r = e(neme + nhmh)
• 1 IE = IC + IB
• 2 For a common base transistor amplifier (i) adc = IC/IE
• 3 Voltage gain for common base transistor amplifier (i) Av = dVCB/dVEB = dICxRo/dIExRi
• (ii)AV = aac Ro/Ri
• 4 Power gain for common base transistor amplifier (i) Ap = dVCE/dVCB x dIC/dIB
• (ii) AP = Av.Ai = aac2R0/Ri
THANKING
YOU