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    The document contains a table listing various semiconductor fabrication process recipes including the tube used, type of process, thickness or time parameters, and deposition rates. Specifically, it includes recipes for oxidation, annealing, nitride deposition, polysilicon deposition, LTO, sintering, diffusion, and SiC deposition processes. The recipes are identified by number and provide processing details to fabricate semiconductor devices.

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    FurnaceRecipes

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    The document contains a table listing various semiconductor fabrication process recipes including the tube used, type of process, thickness or time parameters, and deposition rates. Specifically, it includes recipes for oxidation, annealing, nitride deposition, polysilicon deposition, LTO, sintering, diffusion, and SiC deposition processes. The recipes are identified by number and provide processing details to fabricate semiconductor devices.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    10 views1 page

    Furnace Recipes

    Uploaded by

    a4623
    The document contains a table listing various semiconductor fabrication process recipes including the tube used, type of process, thickness or time parameters, and deposition rates. Specifically, it includes recipes for oxidation, annealing, nitride deposition, polysilicon deposition, LTO, sintering, diffusion, and SiC deposition processes. The recipes are identified by number and provide processing details to fabricate semiconductor devices.

    Copyright:

    Attribution Non-Commercial (BY-NC)
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    of 1

    Recipe# Tube Process Thickness Recipe Time Deposition Rate

    152 322‐1 Dry Oxidation 1000Å 3:32


    155 322‐2 Wet Oxidation 5000Å 4:17
    144 322‐2 Wet Oxidation 1um 8:07
    132 322‐2 Wet Oxidation 1.5um 9:20
    168 322‐2 Wet Oxidation 2um 13:30
    141 322‐3 Anneal, 1000 °C for 1hr 3:32
    140 321‐1 Low Stress Nitride 3:17+depo time 13Å/min
    100 321‐1 Stoic Nitride 2:51+depo time 30Å/min
    350 321‐3 PolySilicon 2:20+depo time 600°C, 80Å/min
    352 321‐3 PolySilicon 2:20+depo time 580°C, 60Å/min
    300 321‐3 Doped PolySilicon 2:20+depo time 600°C, 30Å/min
    400 321‐4 LTO 2:55+depo time 150Å/min
    801 322‐4 Sinter, 410°C, 20min 3:35
    802 322‐4 Sinter, 455°C, 20min 3:35
    203 323‐2 Boron Diffusion, 1120°C 7:40+3hrs Diffusion time
    123 323‐1 D‐Poly Drive in, 1000°C 2:00
    350 323‐3 SiC 6:03+depo time 50Å/min

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