ELEC 7364

Advance Topics in Microelectronics

Summer 2008
Homework Solution

1. Silicon Crystal Growth

a) Mass balance of doping and crystal:

Let = , α= 1.3, β= 0.7, x = 0.5, = k = 0.3:

Therefore =

Silicon melt should have As to meet the requirement.

Silicon Volume:
Silicon melt density = 2.57

= = = 46692.6 cm3

Number of As atoms:
NAs = = 46692.6 cm3 =

As weight:
Avogadro’s number = ; As atomic weight = 74.92 g/mole

MAs =

= = 8.93 g

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b) Technologies to ensure uniform doping along length of Si ingot growth:

1. The most important thing is to adjust dopant concentration depending on whether

distribution coefficient (k) is less than or large than 1.

For k<1, the doping concentration increases along the length of pulled crystal
ingot. In order to keep constant doping concentration, melted silicon should be
added in the crucible.

For k>1, the doping concentration decreases along the length of pulled crystal
ingot. In order to keep constant doping concentration, dopants should be added in
the crucible.

To keep the melt conditions in the growth crucible constant, double-crucible

method could be used. Silicon or dopants in the reservoir crucible can be added to
the growth crucible to maintain a uniform dopant concentration and liquid level in
the growth crucible.

2. Limit growth rate: pull speed should be slow enough to let atoms to rearrange
themselves in the melt/solid interface and to follow the crystal orientation of the
seed.

3. Rotate puller in one direction, while rotate melt in the opposite direction to ensure
good mixing of silicon melt and dopants.

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2. Silicon Oxidation
a) Three oxidation steps

I. First Step: 1000 ℃ dry oxidation for 15 min

B=0.0117 µm2/hr, , = 0.37 hr;

= = 0.165 µm

Oxide thickness after step 1:

= 0.036 µm

Oxide from the first step = = 0.036 µm

Silicon consumed during the first step:

xSi-1= 0.44 = 0.44 0.036 = 0.0158 µm

Cross-section of Si/SiO2 after first step

Total SiO2 thickness =0.036 µm

Original Si Wafer Surface
Si consumed =0.0158 µm
Si/SiO2 Interface after step 1

Silicon wafer

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II. Second Step: 1000 ℃ wet oxidation for 20 min
B = 0.287 µm2/hr, , = 0;

= = 0.226 µm

Deal Grove model assumes that oxidation starts on silicon surface. We need to
calculate the equivalent τdue to the oxide from the first step:

= = 0.033 hr;

t = 20 min = 0.33 hr;

Total thickness after step 2:

= = 0.229 µm;

Oxide from the second step = - = 0.229 - 0.036 = 0.193 µm

Silicon consumed during the second step:

xSi-2 = 0.44( - ) = 0.44 0.193 = 0.085 µm

Cross-section of Si/SiO2 after second step

SiO2 from step 1, = 0.036 µm

Total SiO2 thickness =0.229 µm

Si/SiO2 Interface after step 1

Si consumed =0.085 µm
Si/SiO2 Interface after step 2

Silicon wafer

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III. Third Step - 1200℃ wet oxidation for 10 min
B = 0.72 µm2/hr, , = 0;

= = 0.05 µm

Calculate the equivalent τdue total oxide thickness from the second step:

= = 0.089 hr;

t = 10 min = 0.167 hr;

Total thickness after step 3:

= = 0.405 µm;

Oxide from the third step = - = 0.405-0.229 = 0.176 µm

Silicon consumed during the third step:

xSi-3 = 0.44( - )= 0.44 0.176 = 0.077 µm

Cross-section of Si/SiO2 after third step

SiO2 from steps 1+ 2, = 0.229 µm

Total SiO2 thickness =0.405 µm

Si/SiO2 Interface after step 2

Si consumed =0.077 µm
Si/SiO2 Interface after step 3

Silicon wafer

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b)
Oxidation Condition Oxide Grown
1000 ℃ dry oxidation
Growth rate = = 2.4 nm/min. It grows slower
for 15 min
but gives denser and better quality layer compared to wet
oxide.
1000 ℃ wet oxidation
Growth rate = = 9.65 nm/min. Comparing
for 20 min
with dry oxide at the same temperature, it grows faster but has
a lower quality layer with more defects.
1200 ℃ wet oxidation
Growth rate = = 17.5 nm/min. Comparing
for 10 min
with wet oxide at lower temperature, the growth rate at higher
temperature is faster, but more defects are expected.

Dry oxidation is generally useful in producing thin oxide films < 200 nm; one
possible application is gate dielectrics for MOSFET. Since dry oxide film tends to be
denser with lower defect density.
Wet oxidation is used when thick oxide film is needed. One possible usage is field
oxide more than 1 µm thick to provide electrical isolation between the adjacent
devices.

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