Queen’s University Belfast - School of Electronics, Electrical Engineering & Computer

Science
ELE2018 Fabrication Technology - Tutorial Solutions

1) Describe (using a series of diagrams) the use of photolithography to pattern a thin aluminium
layer on top of a silicon dioxide layer on silicon.

The process is similar to that described in the lecture notes for patterning a layer of silicon
dioxide. A different chemical etch solution would be used for aluminium compared to silicon
dioxide.

2) What is meant by the term “solid solubility limit” in relation to diffusion of dopant into
silicon.

Refer to page 1 of the lecture notes on fabrication technology.

3) How can dopant be prevented from entering selected regions of a silicon wafer during either a
diffusion or ion-implantation process.

Refer to pages 1,2 and 3 of the lecture notes on fabrication technology.

4) What are the main steps in an ion-implantation process.

Refer to page 2 of the lecture notes on fabrication technology.

5) An experiment was performed on 3 identical silicon wafers to determine the growth rate
constants for wet oxidation at 900°C. The results are given in the table below:
wafer oxidation time (mins) oxide thickness (nm)

1 30 68

2 120 240

3 480 720

Calculate the oxidation rate parameters A &B.

Use the expression t =

B
1
( )
X O + A X O − τ and substitute the 3 sets of results.
2

t & τ in mins, Xi, & XO in nm.

30 = (682 + 68A)− τ
1
(1)
B
120 = (2402 + 240A)− τ
1
(2)
B
480 = (7202 + 720A)− τ
1
(3)
B

→ 3 equations & 3 unknowns (A, B, τ)

Eqn(2) - Eqn(1) → 90B = 52976 + 172A (4)
Eqn(3) - Eqn(2) → 360B = 460800 + 480A (5)

Eqn(5) – 4 × Eqn(4) → 0 = 248896 - 208A → A = 1196 nm =1.2 µm

 Substitute into Eqn(5) or Eqn(4) → B= 2874 nm2/min = 0.17µm2/hr

Substitute A & B into eqn (1) or (2) or (3) → τ = 0 mins.

i.e. there was no oxide present on the silicon wafers before the process.

6) Determine the total thickness of oxide produced on a bare silicon wafer by the following
process sequence;
a) 60 minute dry oxidation at 1000oC, followed by;
b) 30 minute wet oxidation at 1000oC, followed by;
c) 20 minute dry oxidation at 1000oC.
Growth rate parameters:
Dry oxidation at 1000oC - A = 0.23µm, B = 0.01 µm2/hr
Wet oxidation at 1000oC - A=0.44µm, B = 0.31µm2/hr

step a) 60 minute dry oxidation at 1000oC:-

Xi = 0, τ = 0hr, t = 1hr A = 0.23µm, B = 0.01 µm2/hr,

XO 2 + AXO = Bt + Xi 2 + AXi XO 2 + 0.23XO − 0.01 = 0

Solving the quadratic equation

− 0.23 ± 0.23 2 − 4 × −0.01 − 0.23 ± 0.30

XO = = = 0.037 µm
2 2

step b) 30 minute wet oxidation at 1000oC:-

Xi = 0.037µm, (i.e. the oxide produced during step a) A=0.44µm, B = 0.31µm2/hr, t = 0.5hr

XO 2 + AXO = Bt + Xi 2 + AXi XO 2 + 0.44XO = 0.31 × 0.5 + 0.037 2 + 0.44 × 0.037

XO 2 + 0.44XO − 0.17 = 0

Solving the quadratic equation

− 0.44 ± 0.44 2 + 4 × 0.17 − 0.44 ± 0.93

XO = = = 0.247 µm
2 2

i.e. after step b, the total oxide thickness becomes 0.247 µm.

step c) 20 minute dry oxidation at 1000oC:-

Xi = 0.247 µm, A = 0.23µm, B = 0.01 µm2/hr, t = 0.33hr

XO 2 + AXO = Bt + Xi 2 + AXi XO 2 + 0.23XO = 0.01 × 0.33 + 0.247 2 + 0.23 × 0.247

 XO 2 + 0.23XO − 0.12 = 0

Solving the quadratic equation

− 0.23 ± 0.23 2 + 4 × 0.12 − 0.23 ± 0.73

XO = = = 0.251µm
2 2

i.e. the final step has negligible effect on the total oxide thickness.

7) Describe the equipment normally used for thermal oxidation of silicon.

Refer to page 5 of the lecture notes on fabrication technology.