Final, 2011 1.

We obtained both the theoretical and the experimental C-V characteristics at a low frequency to estimate the interface trap density. We also calculated Vg,theoretical and Vg,experimental as functions of s by utilizing equation (47) in chapter 4 of our textbook and by referring to Fig. 15 (pp 217-218). The following table shows the results.

s
(V)
-0.14 -0.04 0.12 0.3 0.45 0.6

Vg, ideal (V)

-1.41 -0.954 -0.705 -0.49 -0.319 -0.15

Vg, experimental (V)

-1.95 -1.25 -0.85 -0.45 0 0.65

Cideal (pF) 175 110 40 25 20 30

Cexperimental (pF) 180 135 100 125 135 177

Dit (#/cm2-eV)

(a) Fill out the column for the interface trap density Dit. (b) Use the following equation to calculate Dit at s = 0.

2. The inverted charge Qn is given by Qn = Cox(Vg - Vt - Vy). Assuming VD < VD,sat show that the longitudinal electrical field Ey(y) at x = 0 (the interface at the gate oxide and the semiconductor) may be expressed as follows:

3. In the strong inversion region where (Vg - Vt) >> Vy, show that the following relation holds: ID,drift >> ID,diffusion.