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2N3906 MMBT3906 PZT3906: PNP General Purpose Amplifier
2N3906 MMBT3906 PZT3906: PNP General Purpose Amplifier
2N3906
MMBT3906
C
PZT3906
C
E C B
E C
TO-92
E
SOT-23
Mark: 2A
SOT-223
Parameter
Value
-40 -40 -5.0 -200 -55 to +150
Units
V V V mA C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3906 625 5.0 83.3 200
Max
*MMBT3906 350 2.8 357 **PZT3906 1,000 8.0 125
Units
mW mW/C C/W C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2N3906/MMBT3906/PZT3906, Rev A1
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = -1.0 mA, IB = 0 IC = -10 A, IE = 0 IE = -10 A, IC = 0 VCE = -30 V, V BE= -3.0 V VCE = -30 V, VBE= -3.0 V -40 -40 -5.0 -50 -50 V V V nA nA
ON CHARACTERISTICS
hFE DC Current Gain * IC = -0.1 mA, VCE= -1.0 V IC = -1.0 mA, VCE = -1.0 V IC = -10 mA, VCE = -1.0 V IC = -50 mA, VCE = -1.0 V IC = -100 mA, VCE = -1.0 V IC = -10 mA, I B = -1.0 mA IC = -50 mA, I B = -5.0 mA IC = -10 mA, IB = -1.0 mA IC = -50 mA, IB = -5.0 mA 60 80 100 60 30 300
VCE(sat) VBE(sat)
-0.65
V V V V
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = -3.0 V, VBE = -0.5 V, IC = -10 mA, IB1= -1.0 mA VCC = -3.0 V, IC = -10 mA IB1 = IB2 = -1.0 mA 35 35 225 75 ns ns ns ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)
Typical Characteristics
= 10
200
150
25 C
100
- 40 C
0.05 0
- 40 C
50 0.1
0.2
50
100
200
= 10
- 40 C
125 C
25 C 125 C
V CE = 1V
200
25
Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage
10
C obo
8 6 4 2 0 0.1
C ibo
0.1
0.01 25
125
10
Typical Characteristics
(continued)
1 0 0.1
I C = 100 A, R S = 2.0 k
2 0 0.1
1 10 f - FREQUENCY (kHz)
100
1 10 R S - SOURCE RESISTANCE ( k )
100
tf
10 I B1 = I B2 =
Ic 10
tr
10
VBE(OFF) = 0.5V
Ic t off I = I = B1 B2 10
td
100
1 I
100
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
25
50 75 100 TEMPERATURE (o C)
125
150
Typical Characteristics
(continued)
_ 4
Input Impedance
VCE = 10 V f = 1.0 kHz
10
1 0.1
10
0.1 0.1
10
Output Admittance
h oe - OUTPUT ADMITTANCE ( mhos) 1000 V CE = 10 V f = 1.0 kHz
h fe - CURRENT GAIN 1000 500
Current Gain
V CE = 10 V f = 1.0 kHz
200 100 50
100
20
10 0.1
10
10 0.1
10
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER
FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP
PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G