Scribd Logo
Upload

Welcome to Scribd!

  • Seminar

    Uploaded by

    Blaahkugan Kun
    16 views1 page
    This document describes a new type of solid state magnetic memory that uses vertical Bloch line pairs in stripe domains of bubble garnet films to store 1s and 0s. The memory organization has a major line for bubble propagation and parallel minor loops for storing vertical Bloch line pairs. Writing involves converting the presence/absence of bubbles in the major line to the presence/absence of Bloch lines in storage areas, and reading reverses this process by detecting converted bubbles. The high bit density of around 1.6 Gbit/cm2 is expected using 0.5 μm bubble garnet films.

    Original Description:

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    DOC, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This document describes a new type of solid state magnetic memory that uses vertical Bloch line pairs in stripe domains of bubble garnet films to store 1s and 0s. The memory organization has a major line for bubble propagation and parallel minor loops for storing vertical Bloch line pairs. Writing involves converting the presence/absence of bubbles in the major line to the presence/absence of Bloch lines in storage areas, and reading reverses this process by detecting converted bubbles. The high bit density of around 1.6 Gbit/cm2 is expected using 0.5 μm bubble garnet films.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    16 views1 page

    Seminar

    Uploaded by

    Blaahkugan Kun
    This document describes a new type of solid state magnetic memory that uses vertical Bloch line pairs in stripe domains of bubble garnet films to store 1s and 0s. The memory organization has a major line for bubble propagation and parallel minor loops for storing vertical Bloch line pairs. Writing involves converting the presence/absence of bubbles in the major line to the presence/absence of Bloch lines in storage areas, and reading reverses this process by detecting converted bubbles. The high bit density of around 1.6 Gbit/cm2 is expected using 0.5 μm bubble garnet films.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 1

    SOLID STATE BLOTCH LINE MEMORY

    ABSTRACT
    A new magnetic solid state memory utilizes usual bubble garnet films. The "1" or "0" is stored by the presence or absence of a negative vertical Bloch line pair in the stripe domains. The memory chip organization is composed of a conductor-drive bubblepropagation major line and long stripe domains aligned in parallel which constitute minor loops to accommodate vertical Bloch line pairs. When doing the writing, the presence and absence of the bubbles in the major line is converted to the presence and absence of the vertical Bloch line in the storage area. When doing the reading, the reverse is true. The Bloch line pair is replicated in the stripe domains, and the converted bubbles are detected by the usual stretcher detector. The Bloch lines propagate under the successively applied bias pulsed fields. The bit density increases drastically, and we can expect around 1.6 Gbit/cm2using 0.5 m bubble garnet films.

    Submitted by, Jonny Paul,s7ECE NO:15

    You might also like