HOME WORK: 1 School: SEE Department: ECE Name of the faculty member: Ms.

Navjot Kaur Course No: ECE201 Course Title: Electronics Devices and Circuits Class: B.Tech ECE Term: 2 Section: E2012 Batch:2010 Max. Marks: 10 Date of Allotment: 02/09/11 Date of Submission: 16/09/11

PART-A 1) In an N-type semiconductor, the Fermi level is 0.3ev below the conduction level at a room temperature of 300K. If the temperature is increased to 360K, determine the new position of the Fermi level. 2) In a P-type semiconductor, the Fermi level is 0.3ev above the valence band at a room temperature of 300K. Determine the new position of the Fermi level for temperatures of (a) 350K and (b) 400K. 3) In an N-type semiconductor, the Fermi level lies 0.2ev below the conduction band. Find the new position of the Fermi level if the concentration of donor atoms is increased by a factor to (a) 4 and (b) 8. Assume kT = 0.025ev. PART-B 4) Find the conductivity of silicon (a) in intrinsic condition at a room temperature of 300K, (b) with donor impurity of 1 in 108, (c) with acceptor impurity of 1 in 5 X 107 and (d) with both the impurities present simultaneously. Given that ni for silicon at 300K is 1.5 X 1010 cm-3 , n = 1300 cm2/V-s, p = 500 cm2/V-s, number of Si atoms per cm3 = 5 X 1022. 5) A sample of silicon at a given temperature T in intrinsic condition has a resistivity of 25 X 104 cm. The sample is now doped to the extent of 4 X 1010 donors atoms/cm3 and 1010 acceptor atoms/cm3. Find the total conduction current density if an electric field of 4V/cm is applied across the sample. Given that n = 1250 cm2/V-s and p = 475 cm2/V-s at the given temperature. 6) A specimen of pure germanium at 300K has a density of charge carriers 2.5 X 1019/m3. It is doped with donor impurity atoms at the rate of one impurity atom every 106 atoms of germanium. All impurity atoms are supposed to be ionised. The density of germanium atom is 4.2X1028 atoms/m3. Calculate the resistivity of the doped germanium if electron mobility is 0.38 m2/V-s. If the Germanium bar is 5 X 10-3 m long and has a cross sectional area of (5 X 10-6)2 m2, determine its resistance and the voltage drop across the semiconductor bar for a current of 1 A flowing through it.

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Date: 01/09/11 Remarks by HOD (Mandatory) Sig. of HOD with date Remarks by HOS (Mandatory) Sig. of HOS with date Sig. of Faculty member