ELL211 Physical Electronics HW2

1. At 300K determine the probability that an energy level 3kT above EF is occupied

2. Calculate the energy (E-EF)at which the Boltzmann approximation is within 1% Fermi-
Dirac

3. Consider Phosphorus doping of Silicon at Nd =1016 cm-3 What fraction of donors are
ionized at 300K. Ec -Ed =45 meV

4. The intrinsic carrier concentration in Silicon is to ne no greater than 1012 cm-3. Assume
Eg=1.12eV. Determine the maximum temperature allowed for Silicon

5. The fermi level in n-type silicon at T=300K is 245meV below the conduction band. And
200meV below the donor band. Determine the probability of finding an electron in i)in the
donor level ii)in a state in conduction band kT above the band edge

6. Defects in a semiconductor material introduce allowed energy states within the forbidden
energy band. Assume a particular defect in Silicon introduces two discrete levels: a donor
level 0.35 eV above the top of the valence band and an acceptor level 0.65eV above the top
of the valence band. Sketch the charge density of each defect as the fermi level moves from
Ev to Ec. Which defect dominates in heavily doped n-type material ? Heavily doped p-type
material ?

7. The mobility of electrons in the material InAs is ∼ 35,000 cm2/V·s at 300K compared to a mobility
of 1400 cm2/V·s for silicon. Calculate the scattering times in the two semiconductors. The electron
masses are 0.02 m0 and 0.26 m0 for InAs and Si, respectively.