University of Science and Technology of Hanoi (USTH)

Advanced Materials Science and Nanotechnology (AMSN)

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B2 - Semiconductors_HW1

1, a) If EF = Ec, find the probability of a state being occupied at E = Ec + kT

b) If EF = Ev, find the probability of a state being empty at E = Ev - kT

2, Determine the probability that an energy level is occupied by an electron if

the state is above the Fermi level by:
a) kT
b) 5kT
c) 10kT

3, Determine the probability that an energy level is empty of an electron if the

state is below the Fermi level by:
a) kT
b) 5kT
c) 10kT

4, For Silicon: Nc = 2.8x1019 cm-3; Nv = 1.04x1019 cm-3; ni = 1.5x1010 cm-3

a) Calculate the probability that a state in conduction band is occupied by an
electron and calculate the thermal equilibrium electron concentration in
Silicon at T = 300K. Given that Fermi energy is 0.25 eV below the conduction
band.
b) Calculate the thermal equilibrium hole concentration in silicon at T = 400K.
Given that Fermi energy is 0.27 eV above the valence band energy.
c) Find the intrinsic carrier concentration in Silicon at T = 200K.
d) Calculate the position of the intrinsic Fermi level with respect to the center
of the band gap in Silicon at T = 300K. Given that mn* = 1.08m0; mp* = 0.56m0
e) The intrinsic concentration in silicon is no greater than ni = 1x1012 cm-3.
Assume Eg = 1.12 eV. Determine the maximum temperature allowed for the
silicon.

5, For a particular semiconductor, Eg = 1.5eV; mp* = 10mn* at T = 300K, and ni =

1x105 cm-3.
a) Determine the position of the intrinsic Fermi energy level with respect to
the center of the band gap.
b) Impurity atoms are added so that the Fermi energy level is 0.45 eV below
the center of the band gap.
Are acceptor of donor atoms added?
What is the concentration of impurity atoms added?

6, Consider a region of Silicon at room temperature. For each of the following

cases, calculate the equilibrium electron and hole concentrations (n and p).
Assume that the dopants are fully ionized.
a) Intrinsic material (Nd = Na = 0).
b) Nd = 1x1013 cm-3, Na = 0.
c) Nd = 1x1017 cm-3, Na = 0
d) Nd = 0, Na = 1x1013 cm-3.
e) Nd = 1x1017 cm-3, Na = 3x1017 cm-3.
./.