Q.

1 Determine the probability that an energy level is occupied by an electron if the

state is above the Fermi level by (a) KT (b) 5KT (c) 10 KT

Q.2 Show that the probability of an energy state being occupied ∆𝐸 above the fermi
energy is the same as the probability of a state being empty ∆𝐸 below the fermi
level.

Q3. Assume Silicon (bandgap 1.12 eV) at room temperature (300 K) with the Fermi
level located exactly in the middle of the bandgap. Answer the following questions.
(a) What is the probability that a state located at the bottom of the conduction band
is filled?
(b) What is the probability that a state located at the top of the valence band is
empty?

Q.4 The fermi energy for copper at T = 300 K is 0.7 eV. The electron in copper follow
the fermi Dirac distribution function. (a) find the probability of an energy level at 7.15
eV being occupied by an electron. (b) Repeat part (a) for T = 1000K (Assume that
fermi level is constant). (c) Repeat part (a) for E =6.85 eV and T = 300K (d) Determine
the probability of the energy state at E = EF being occupied at T=300K and at T =
1000K.
Q.5 Given the effective mass of electrons and holes in Silicon, germanium and gallium
arsenide, calculate the position of the intrinsic Fermi energy level with respect to the center of
the bandgap for each semiconductor at T = 300K.
[Effective mass me = 1.08m0 , mh = 0.56m0 ]

Q.6 The electron concentration in silicon at T = 300 K is n0 = 5x104 cm-3 . (a) determine p0. is
this n-or-p type material? (b) determine the position of the fermi level with respect to the
intrinsic fermi level.

Q.7 if Ec – EF = 0.25 eV in GaAs at T = 400 K, calculate the values of n0 and p0 .(b) assuming the
value of n0 from part (a) remains constant, determine Ec – EF and p0 at T = 300 K.
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