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Semiconductor
material
1unction forward
voltage
V 25 C
Electron mobility
m
2
/(Vs) 25 C
Hole mobility
m
2
/(Vs) 25 C
Max. junction temp.
C
Ge 0.27 0.39 0.19 70 to 100
Si 0.71 0.14 0.05 150 to 200
GaAs 1.03 0.85 0.05 150 to 200
Al-Si junction 0.3 - - 150 to 200