ELECTRONIC SWITCHING

TRANSISTO
• is a three terminal semiconductorRS
device which is primarily used for high-
speed switching and amplification.
TRANSISITORS

BIPOLAR JUNCTION FIELD EFFECT

TRANSISITOR TRANSISTOR

NPN PNP JFET MOSFET

N P
ENHANCEMENT DEPLETION
CHANNEL CHANNEL
 Bipolar Junction
Transistor
Base – Input Terminal (±Vs)
• Controls current flow from emitter to collector

Collector – Output Terminal (+Vs)

• Collects current carriers from the emitter

Emitter – Input or Output Terminal (-Vs/ Gnd)

• Acts as the source of the current carriers
 Bipolar Junction
Transistor
Semiconductor device which can be used for switching or
amplification
• Current Controlled Device
• Normally Open
C C

B B

E E

PNP NPN
 Types of Transistor
Bipolar Junction Transistor
SYMBOL:

INTERNAL CONSTRUCTION:
Packages
 Terminal Identification and Testing
Using Diode Tester
a. locate the base
(common terminal)
b. identify the type
Red – NPN
Black – PNP
c. locate the emitter
and collector
Emitter – Higher
Reading
 Basis is Diode
Collector – Lower Testing

Reading
Terminal Identification and Testing
Using Analog Tester set to Ohmmeter

Setting:
X1 or X10
Good Indication:
2LR & 4HR
Transistor
Application
Circuit
 BJT Operation
+VS Supply (+)

LOAD
Input or LOAD Transistor (C)

Trigger C Output or
B
-
Load Side
RS + -
E

INPUT/ DRIVER LOAD/

TRIGGER TRANSISTOR OUTPUT
#1: Relay Driver Circuit
 #2: Single Phase Drive Circuit
H-Bridge Circuit

Input
How Does an H-Bridge Works?

SW1 SW3

Current
SW2 SW4

Motor moves clockwise direction when:

SW1 AND SW4 = ON
How Does an H-Bridge Works?

SW1 SW3

Current
SW2 SW4

Motor moves counterclockwise direction when:

SW2 AND SW3 = ON
FIELD EFFECT
TRANSISTOR
 Major Types Of Transistor
Bipolar Junction Field Effect
Transistor Transistor

Types: Types:
NPN JFET
PNP MOSFET or IGFET
 Field Effect Transistor
Three terminal unipolar
semiconductor device that
control the current between
source and drain connections
by a voltage applied between
the gate and source.
BJT Vs FET Terminals
BJT FET
Emitter - (E)      >>     Source - (S)
Base - (B)      >>     Gate - (G)
Collector - (C)   >>    Drain - (D)     
 Field Effect Transistor
BJT vs FET Internal Construction
 FIELD EFFECT
TRANSISTORS
• Voltage Controlled Device
• Normally Close
• Unipolar Transistor

• JFET
• Junction Field Effect Transistor
• MOSFET
• Metal Oxide Silicon Field Effect Transistor
FET’s Packages
Types of FET:
• Junction field-effect
transistor (JFET)
• Metal Oxide semiconductor
field-effect transistor
(MOSFET)
 Junction field-effect
Transistor(JFET)
- it is the earliest FET
available.
-It is a voltage control
normally-on or normally
closed device
 Types of JFET:
• N-channel JFET • P-channel JFET
 JFET Operation:
• N-channel JFET • P-channel JFET
JFET Operation:

Ohmic Region - when VGS = 0 the depletion

layer of the channel is very small and the JFET
acts like a voltage controlled resistor.
JFET Operation:

 Cut-off Region – a.k.a the pinch-off region were

the Gate voltage, VGS is sufficient to cause the JFET
to act as an open circuit as the channel resistance
is at maximum.
JFET Operation:

Breakdown Region – The voltage between the

Drain and the Source, ( VDS ) is high enough to
causes the JFET’s resistive channel to break down
and pass uncontrolled maximum current.
JFET Operation:

Saturation Region – The JFET becomes a good

conductor and is controlled by the Gate-Source
voltage while the Drain-Source voltage, ( VDS ) has
little or no effect.
JFET as a Switch
JFET as a Switch
How to test
JFET ?
Gate-Drain=1 LR and 1 HR Good Condition:
Gate-Source=1 LR and 1 HR
Drain-Source= 2LR 4LR and 2HR
Metal Oxide Semiconductor
Field-Effect Transistor
(MOSFET)
- Unlike JFET, MOSFET gate is separated
from the Main channel (P or N Type) by an
insulator…

Gate is a
“Metal Oxide” electrode
MOSFET Internal
Construction
Major Types of MOSFET
Depletion Type Enhancement Type   
  
The transistor requires The transistor requires
the Gate-Source The Gate-Source
voltage, ( VGS ) to voltage, ( VGS ) to
switch the device "OFF". switch the device
"ON".
"Normally Closed“
switch "Normally Open“
  switch
SYMBOL of MOSFET
 MOSFET AS A
SWITCH

Flywheel Diode
- to protect the
MOSFET from any
self generated
back-emf (Voltage)
MOSFET Pin
Configuration
MOSFET Pin
Configuration
MOSFET TESTING
MOSFET
APPLICATION
IGBTInsulated Gate Bipolar Junction Transistor
• IGBT is known by various other names also, such as- Metal Oxide
Insulated Gate Transistor (MOSIGT), Gain Modulated Field Effect
Transistor (GEMFET), Conductively Modulated Field Effect Transistor
(COMFET), Insulated Gate Transistor (IGT).
• The IGBT combines, in a single device, a control input with a MOS
structure and a bipolar power transistor that acts as an output switch.
IGBTs are suitable for high-voltage, high-current applications. They are
designed to drive high-power applications with a low-power input.
Advantages and Disadvantages of IGBT
• Lower gate drive requirements
• Low switching losses
• High input impedance
• Voltage controlled device
• Temperature coefficient of ON state resistance is positive and less
than PMOSFET, hence less On-state voltage drop and power loss.
• Enhanced conduction due to bipolar nature
• Better Safe Operating Area
Disadvantages of IGBT are showing below
• Cost
• Latching-up problem
• High turn off time compared to PMOSFET
How to Test
• https://www.youtube.com/watch?v=z3Mdc5qQx8k