NGTB75N60FL2WG

IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.

Features www.onsemi.com
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode 75 A, 600 V
• Optimized for High Speed Switching VCEsat = 1.70 V
• 5 ms Short−Circuit Capability EOFF = 1.0 mJ
• These are Pb−Free Devices
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding G

ABSOLUTE MAXIMUM RATINGS E

Rating Symbol Value Unit
Collector−emitter voltage VCES 600 V

Collector current IC A
@ TC = 25°C 100
@ TC = 100°C 75
TO−247
Diode Forward Current IF A G CASE 340L
@ TC = 25°C 100 C
E STYLE 4
@ TC = 100°C 75
Diode Pulsed Current IFM 200 A
TPULSE Limited by TJ Max
MARKING DIAGRAM
Pulsed collector current, Tpulse ICM 200 A
limited by TJmax

Short−circuit withstand time tSC 5 ms

VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
75N60FL2
Gate−emitter voltage VGE $20 V AYWWG
V
Transient gate−emitter voltage $30
(TPULSE = 5 ms, D < 0.10)

Power Dissipation PD W
@ TC = 25°C 595
@ TC = 100°C 265
Operating junction temperature TJ −55 to +175 °C A = Assembly Location
range Y = Year
WW = Work Week
Storage temperature range Tstg −55 to +175 °C
G = Pb−Free Package
Lead temperature for soldering, 1/8” TSLD 260 °C
from case for 5 seconds
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be Device Package Shipping
assumed, damage may occur and reliability may be affected.
NGTB75N60FL2WG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

June, 2015 − Rev. 4 NGTB75N60FL2W/D
 NGTB75N60FL2WG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.28 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V
gate−emitter short−circuited
Collector−emitter saturation voltage VGE = 15 V, IC = 75 A VCEsat 1.50 1.75 2.00 V
VGE = 15 V, IC = 75 A, TJ = 175°C − 2.30 −
Gate−emitter threshold voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 600 V ICES − − 0.1 mA
emitter short−circuited VGE = 0 V, VCE = 600 V, TJ = 175°C − − 4.0
Gate leakage current, collector−emitter VGE = 20 V , VCE = 0 V IGES − − 200 nA
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance Cies − 7500 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 300 −
Reverse transfer capacitance Cres − 190 −
Gate charge total Qg − 310 − nC
Gate to emitter charge VCE = 480 V, IC = 75 A, VGE = 15 V Qge − 60 −
Gate to collector charge Qgc − 150 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time td(on) − 110 − ns
Rise time tr − 48 −
Turn−off delay time TJ = 25°C td(off) − 270 −
VCC = 400 V, IC = 75 A
Fall time tf − 70 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V Eon − 2.2 − mJ
Turn−off switching loss Eoff − 1.1 −
Total switching loss Ets − 3.3 −
Turn−on delay time td(on) − 100 − ns
Rise time tr − 50 −
Turn−off delay time TJ = 150°C td(off) − 280 −
VCC = 400 V, IC = 75 A
Fall time tf − 100 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V Eon − 2.8 − mJ
Turn−off switching loss Eoff − 1.6 −
Total switching loss Ets − 4.4 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 75 A VF 1.70 2.20 2.90 V
VGE = 0 V, IF = 75 A, TJ = 175°C − 2.40 −
Reverse recovery time trr − 80 − ns
TJ = 25°C
Reverse recovery charge IF = 75 A, VR = 400 V Qrr − 0.40 − mC
diF/dt = 200 A/ms
Reverse recovery current Irrm − 8 − A
Reverse recovery time trr − 143 − ns
TJ = 175°C
Reverse recovery charge IF = 75 A, VR = 400 V Qrr − 1.45 − mC
diF/dt = 200 A/ms
Reverse recovery current Irrm − 16 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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TYPICAL CHARACTERISTICS

200 200
VGE = 20 V VGE = 20 V
180 TJ = 25°C 180 13 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

to 13 V to 15 V
160 160
140 140 TJ = 150°C
120 11 V 120
11 V
100 100
80 10 V 80 10 V
60 60
9V
40 9V 40
8V
20 8V 20 7V
0 7V 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

200 160
VGE = 20 V
180 TJ = −55°C IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

to 13 V 140
160
120
140 11 V
120 100

100 80
80 10 V
60
60
7V 40 TJ = 150°C
40 9V
20 20
8V TJ = 25°C
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)

2.50 100,000
TJ = 25°C
IC = 75 A

2.00 10,000 Cies

IC = 50 A
C, CAPACITANCE (pF)

1.50 IC = 25 A 1000
Coes
1.00 100
Cres

0.50 10

0 1
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

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TYPICAL CHARACTERISTICS

70 16
VCE = 400 V

VGE, GATE−EMITTER VOLTAGE (V)

60 14
IF, FORWARD CURRENT (A)

12
50
10
40
8
30
6
20
TJ = 150°C 4
VCE = 400 V
10 2 VGE = 15 V
TJ = 25°C IC = 75 A
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350
VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge

3.0 1000
Eon
2.5
SWITCHING TIME (ns)

td(off)
SWITCHING LOSS (mJ)

2.0
td(on)
Eoff
1.5 100 tf

1.0 tr
VCE = 400 V VCE = 400 V
VGE = 15 V VGE = 15 V
0.5 IC = 75 A
IC = 75 A
Rg = 10 W Rg = 10 W
0 10
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature

6 1000
VCE = 400 V
VGE = 15 V
5
TJ = 150°C
td(off)
SWITCHING TIME (ns)

Rg = 10 W Eon
SWITCHING LOSS (mJ)

4
tf
3 100 td(on)
Eoff
2 tr
VCE = 400 V
VGE = 15 V
1
TJ = 150°C
Rg = 10 W
0 10
15 25 35 45 55 65 75 85 95 105 15 25 35 45 55 65 75 85 95 105
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC

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TYPICAL CHARACTERISTICS

14 10,000
VCE = 400 V
VCE = 400 V VGE = 15 V
12
VGE = 15 V TJ = 150°C
SWITCHING LOSS (mJ)

td(off)

SWITCHING TIME (ns)

TJ = 150°C IC = 75 A
10 Eon
IC = 75 A 1000
8 td(on)

6 tr
Eoff 100 tf
4

0 10
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg

6 1000

5
Eon
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

td(off)
4
td(on)
3 100 tf
Eoff tr

2
VGE = 15 V VGE = 15 V
TJ = 150°C TJ = 150°C
1 IC = 75 A
IC = 75 A
Rg = 10 W Rg = 10 W
0 10
150 200 250 300 350 400 450 500 550 600 650 150 200 250 300 350 400 450 500 550 600 650
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE

1000 1000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

100
50 ms 100
dc operation
10
100 ms

Single Nonrepetitive 1 ms 10
1 Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature VGE = 15 V, TC = 150°C
0.1 1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS

Qrr, REVERSE RECOVERY CHARGE (mC)

150 3.0
trr, REVERSE RECOVERY TIME (ns)

2.5 TJ = 175°C, IF = 75 A
130
TJ = 175°C, IF = 75 A
2.0
110
1.5
90
1.0 TJ = 25°C, IF = 75 A
TJ = 25°C, IF = 75 A

70
0.5

50 0
100 300 500 700 900 1100 1300 100 300 500 700 900 1100 1300
diF/dt, DIODE CURRENT SLOPE (A/m) diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V)
Irm, REVERSE RECOVERY CURRENT (A)

50 3.5

TJ = 175°C, IF = 75 A
VF, FORWARD VOLTAGE (V)

40 3.0

IF = 75 A
30 2.5
IF = 50 A
20 2.0
TJ = 25°C, IF = 75 A
IF = 25 A
10 1.5

0 1.0
100 300 500 700 900 1100 1300 −75 −50 −25 0 25 50 75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/m) TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ

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TYPICAL CHARACTERISTICS

1
SQUARE−WAVE PEAK R(t) (°C/W)

RqJC = 0.282
50% Duty Cycle
0.1 20%
10%
5% Junction R1 R2 Rn Case Ri (°C/W) Ci (J/°C)
0.01 2% 0.0270 0.0037
0.0243 0.0130
0.0225 0.0445
0.0554 0.0571
C1 C2 Cn 0.1121 0.0892
0.001
0.0409 0.7725
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
Figure 23. IGBT Transient Thermal Impedance

1
RqJC = 0.604
SQUARE−WAVE PEAK R(t) (°C/W)

50% Duty Cycle

20%
0.1 10%
Ri (°C/W) Ci (J/°C)
5% Junction R1 R2 Rn Case 0.006394 0.000156
0.007900 0.001266
2%
0.008527 0.003708
0.025491 0.003923
0.01 0.022800 0.013870
C1 C2 Cn 0.121738 0.008214
Single Pulse
0.363338 0.275226
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance

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Figure 25. Test Circuit for Switching Characteristics

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Figure 26. Definition of Turn On Waveform

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Figure 27. Definition of Turn Off Waveform

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PACKAGE DIMENSIONS

TO−247
CASE 340L−02
ISSUE F

−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
U L A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
STYLE 4:
F 2 PL H PIN 1. GATE
G 2. COLLECTOR
D 3 PL 3. EMITTER
4. COLLECTOR
0.25 (0.010) M Y Q S

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