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ANALOG ELECTRONICS
B.TECH
3RD SEMESTER
APPRATUS REQUIRED:
1) LED Kit
2) Multimeter
3) Connecting wire
4) Voltmeter (0-10v)
5) DC power supply
6) Rheostat
THEORY: When an electron comes down its higher energy level to lower
energy level, its limit energy in form of a photon. The energy of this
photon is equal to the energy gap between this to energy levels. When an
PN junction diodes is forward bias , current lows through the diode. Flows
of current through the semiconductor is caused by flow of free electron in
opposite direction of current and flow of holes in the direction of current,
Hence during flows of this charges carriers, there will be recombination .
OBSERVATION TABLE :-
For R=1.5kΩ
For R=1 kΩ
PRECAUTIONS:
APPARATUS REQUIRED:
This is the most widely used of all the op-amp circuits. The output V0
is feedback to the inverting input through the Rf-Rin network as shown in
figure where Rf is the feedback resistor. The input signal Vi is applied to the
inverting input terminal through Rin and non-inverting input terminal of
op-amp is grounded.
Vo=Vi(-Rf/Rin)
The negetive sign indicates a phase shift of 1800 between Vi and Vo. The
effective input impedences is Ri. An inverting amplifier uses negative.
NON-INVERTING AMPLIFIER
Vout = Vin(1+R2/R1)
Av=Vout/Vin =(1+R2/R1)
APPRATUS REQUITRED:
1) Op-amp-741 kit
2) CRO
3) Connecting wire
THEORY:
SUMMER:- The summing circuit using op-amp as inverting mode
configuration with three input Va, Vb, Vc is shown in figure. The circuit act
as summing amplifier that means at the O/p, We get the addition of the
three input according to the circuit given in the figure O/p equation is as:
Va=Vb=Ov
Using KCL-
I= I1+I2
=-V0/Rf = (V1+V2)/R1
Vo = (-Rf/R1)V1+V2
DIFFERENT AMPLIFIER:
Different circuit using op-amp is shown in the figure. This circuits act as a
difference means when the input to Va and Vb is given at two terminal
as shown in the circuit then the output terminal is the difference of the
two input. Theoritical equation is given as –
Vo = (Rf /R1)V2-V1
PRECAUTION:
APPARATUS REQUIRED:
THEORY:
FET:- It stands for field effect transistor. It is a transistor that uses and
electric field to control the shape and hence the electric conductivity of a
channel of one tab change carrier in semiconductor material FET are also
known as unipolar transistor and as they involved signal carrier tap
operation. The FETs three terminal are sources, drain and gate. There
are two types of Transistor-
PRECAUTION:
APPARATUS REQUIRED:-
THEORY:-
BJT:- It stands for Bipolar Junction Transistor .a Bipolar junction has three
terminals connected to three doped semiconductor .In an NPN transistor ,
a thin and lightly doped P-type been is sandwiched between a heavily
doped N-type emitter and another N-type collector ; while in a PNP
transistor , a thin and lightly doped N-type base is sandwiched between a
heavily doped P-type emitter and another P – type collector
TRANSISTOR:-
Collector :- The remaining section of the transistor is the collector .Its main
Function is to collect majority charge carrier .Collector is always reversed
biased .So as to remove the charge carrier away from its junction with the
base .It is moderately doped.
OBERVATION TABLE:-
2)Computer
DIAGRAM:
WAVEFORM:-
PRECAUTION: -
APPARATUS REQUIRED:
2) Connecting Wires
THEORY:-
Although the MOSFET is a four-terminal device with source (S), gate (G),
drain (D), and body (B) terminals, the body (or substrate) of the MOSFET is
often connected to the source terminal, making it a three-terminal device
like other field-effect transistors. Because these two terminals are normally
connected to each other (short-circuited) internally, only three terminals
appear in electrical diagrams.
CIRCUIT DIAGRAM:-
OBSERVATION TABLE:-
VGS=1V
S NO. VDS ID
VGS=2V
S NO. VDS ID
VGS=3V
S NO. VDS ID
VGS=4V
S NO. VDS ID
GRAPH:-
PRECAUTION:
AIM: To study the PN junction diode characteristics under Forward & Reverse
bias conditions.
APPARATUS REQUIRED-
1. PN Junction Kit
2. Ammeter,
3. Voltmeter,
4. Connecting wires,
5. Resistor
THEORY: A PN junction diode is a two terminal junction device. It conducts only in one
direction (only on forward biasing).
FORWARD BIAS:
On forward biasing, initially no current flows due to barrier potential. As the applied
potential exceeds the barrier potential the charge carriers gain sufficient energy to
cross the potential barrier and hence enter the other region. The holes, which are
majority carriers in the P-region, become minority carriers on entering the N-regions,
and electrons, which are the majority carriers in the N-region, become minority
carriers on entering the P-region. This injection of Minority carriers results in the
current flow, opposite to the direction of electron movement.
REVERSE BIAS:
On reverse biasing, the majority charge carriers are attracted towards the
terminals due to the applied potential resulting in the widening of the depletion
region. Since the charge carriers are pushed towards the terminals no current
flows in the device due to majority charge carriers. There will be some current in
the device due to the thermally generated minority carriers. The generation of
such carriers is independent of the applied potential and hence the current is
constant for all increasing reverse potential. This current is referred to as
Reverse Saturation Current (IO) and it increases with temperature. When the
PROCEDURE:
FORWARD BIAS:
1. Connect the circuit as per the diagram.
2. Vary the applied voltage V in steps of 0.1V.
3. Note down the corresponding Ammeter readings If.
4. Plot a graph between Vf & If
OBSERVATIONS
1. Find the d.c (static) resistance = Vf / If.=
V V
2 − 1 .=
2. Find the a.c (dynamic) resistance r = δV / δI (r = V/ I) =
I
2
− I1
3. Find the forward voltage drop = [Hint: it is equal to 0.7 for Si and 0.3
for Ge]=
REVERSE BIAS:
1. Connect the circuit as per the diagram.
2. Vary the applied voltage Vr in steps of 0.5V.
3. Note down the corresponding Ammeter readings Ir.
4. Plot a graph between Vr & Ir
5. Find the dynamic resistance r = δV / δI.
FORMULA FOR REVERSE SATURATION CURRENT (IO):
Io = ∂I/[exp(∂V/ηVT)]-1=
CIRCUIT DIAGRAM:
FORWARD BIAS:
REVERSEBIAS
MODEL GRAPH:-
TABULAR FORM:-