Lab No.

01
Title:
Introduction to C-MOS, D-MOS and E-MOS basic elements

C-MOS:
CMOS (complementary metal-oxide semiconductor) is
the semiconductor technology used in the transistors that are manufactured into most of
today's computer microchips. Semiconductors are made of silicon and germanium,
materials which "sort of" conduct electricity, but not enthusiastically. Areas of these
materials that are "doped" by adding impurities become full-scale conductors of either
extra electrons with a negative charge (N-type transistors) or of positive charge carriers
(P-type transistors).

Functions of C-MOS:

CMOS circuitry dissipates less power than logic families with resistive loads.
CMOS circuits use a combination of p-type and n-type.
CMOS always uses all enhancement-mode MOSFETs.
An important characteristic of a CMOS circuit is the duality that exists between its
PMOS transistors and NMOS transistors.

Diagram:

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Diodes of operation of (P/N) junction:

1. Enhancement (Forward)
2. Depletion region (Reverse Biased)

1.1electron volt required to expose the holes. In Silicon conductor (creating a hole and
remove the electrons)

D-MOS:

DMOS is a physical structure to make a MOS transistor. CMOS is a logic family

using N and P carrier MOS transistors. In the DMOS the D stands for double diffused.
One polarity diffusion is done through a hole in the oxide and then the other polarity of
carrier diffusion is done.

Diagram:

It also mentions circuit symbol of N-channel MOSFET of depletion type. Due to its
construction if offers very high input resistance (about 10 10 to 1015). Significant current
flows for given VDS at VGS of 0 volt.
When gate (i.e. one plate of capacitor) is made positive, the channel (i.e. the other plate of

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capacitor) will have positive charge induced in it. This will result into depletion of
majority carriers (i.e. electrons) and hence reduction in conductivity.
Input current (100 power consumption)
The circuit switch ONN,OFF due to attraction and repetition.

E-MOS:
The metaloxidesemiconductor field-effect transistor(MOSFET, MOS-FET,
or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose
voltage determines the conductivity of the device.

Diagram:

It also mentions circuit symbol of N-channel MOSFET of enhancement type. Here

continuous channel does not exist from source to drain. Hence no current flows at zero
gate voltage. Symbol depicts broken channel between 'S' to 'D' terminals.

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 Lab No. 02
Title:
Introduction to the Semiconductor Power Diodes (Diode Physics)

Diode:
A Diode is a two-terminal device that acts as a one way conductor that is it permits
current flow in only one direction. The most basic type of diode is the p-n junction diode.

Power diode symbol:

PN Junction Diode:
A single crystal of silicon can be made in which part of it is n-type material and part p-
type. Small pieces of such a crystal with leads attached to the p- and n- type region are
called p-n junction diodes. The pn junction diode conducts in one direction only.

Forward Biased P-N Junction:

Forward biasing the p-n junction drives holes to the junction from the p-type material and
electrons to the junction from the n-type material. At the junction the electrons and holes
combine so that a continuous current can be maintained.

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Reverse Biased P-N Junction:
The application of a reverse voltage to the p-n junction will cause a transient current to
flow as both electrons and holes are pulled away from the junction. When the potential
formed by the widened depletion layer equals the applied voltage, the current will cease
except for the small thermal current.

P- and N- Type Semiconductors:

N-Type Semiconductor:
The addition of pentavalent impurities such as antimony, arsenic or phosphorous
contributes free electrons, greatly increasing the conductivity of the intrinsic
semiconductor. Phosphorous may be added by diffusion of phosphine gas (PH3).

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P-Type Semiconductor:
The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic
semiconductor creates deficiencies of valence electrons,called "holes". It is typical to use
B2H6 diborane gas to diffuse boron into the silicon material.

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 Lab No. 03
Title:
Pin diagrams of various operational amplifiers and other useful devices

741 Characteristics:

large input voltage range

no latch-up

high gain

short-circuit protection

no frequency compensation required

same pin configuration as UA709

741 usage

summing amplifier

voltage follower

integrator

active filter

function generator

LF351:

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Description
These circuits are high speed JFET input single operational amplifiers incorporating
well matched, high voltage JFET and bipolar transistors in a monolithic integrated
circuit. The devices feature high slew rates, low input bias and offset currents, and low
offset voltage temperature coefficient.
555 timer:

Pin 1 (Ground): Connects to the 0v power supply.

Pin 2 (Trigger): Detects 1/3 of rail voltage to make output HIGH. Pin 2 has control
over pin 6. If pin 2 is LOW, and pin 6 LOW, output goes and stays HIGH. If pin 6
HIGH, and pin 2 goes LOW, output goes LOW while pin 2 LOW. This pin has a very
high impedance (about 10M) and will trigger with about 1uA.
Pin 3 (Output): (Pins 3 and 7 are "in phase.") Goes HIGH (about 2v less than rail) and
LOW (about 0.5v less than 0v) and will deliver up to 200mA.
Pin 4 (Reset): Internally connected HIGH via 100k. Must be taken below 0.8v to reset
the chip

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Pin 5 (Control): A voltage applied to this pin will vary the timing of the RC network
(quite considerably).
Pin 6 (Threshold): Detects 2/3 of rail voltage to make output LOW only if pin 2 is
HIGH. This pin has very high impedance (about 10M) and will trigger with about
0.2uA.
Pin 7 (Discharge): Goes LOW when pin 6 detects 2/3 rail voltage but pin 2 must be
HIGH. If pin 2 is HIGH, pin 6 can be HIGH or LOW and pin 7 remains LOW. Goes
OPEN (HIGH) and stays HIGH when pin 2 detects 1/3 rail voltage (even as a LOW
pulse) when pin 6 is LOW. (Pins 7 and 3 are "in phase.") Pin 7 is equal to pin 3 but pin
7 does not go high - it goes OPEN. But it goes LOW and will sink about 200mA.
Pin 8 (Supply): Connects to the positive power supply (Vs). This can be any voltage
between 4.5V and 15V DC, but is commonly 5V DC when working with digital ICs.
IC565:
The IC 565 is usable over the frequency range 0.1 Hz to 500 kHz. It has highly stable
centre frequency and is able to achieve a very linear FM detection.
Diagrams:

Description:
The LM565 and LM565C are general purpose phase locked loops containing a stable,
highly linear voltage controlled oscillator for low distortion FM demodulation, and a
double balanced phase detector with good carrier suppression. The VCO frequency is set
with an external resistor and capacitor, and a tuning range of 10:1 can be obtained with
the same capacitor. The characteristics of the closed loop systembandwidth, response
speed, capture and pull in rangemay be adjusted over a wide range with an external

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resistor and capacitor. The loop may be broken between the VCO and the phase detector
for insertion of a digital frequency divider to obtain frequency multiplication.

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