FIELD EFFECT TRANSISTORS

Group Members:
Ralph Lawrence Tomarong
Jericho Pelagio
Lester Marcelo
Christian B. Sto.Domingo
Manuel Aringino
FIELD EFFECT TRANSISTORS
The Field Effect Transistor (FET)
is a three-terminal device similar to the
bipolar junction transistor. The FET,
however, is a unipolar device that
depends on only one type of charge
carrier, either free electrons or holes.
There are basically two types of FETs:
the junction field effect transistor,
abbreviated JFET, and the metal- Field Effect Transistor
oxide-semiconductor field effect
transistor, abbreviated MOSFET.
FIELD EFFECT TRANSISTORS
Unlike bipolar transistors, which are
current-controlled devices, FETs are
voltage-controlled devices, i.e., an
input voltage controls an output
current. The input impedance is
extremely high (of the order of JFET
megohms) for FETs and therefore they
require very little power from the
driving source. Their high input
impedance is one reason that FETs
are sometimes preferred over bipolar
transistors.
MOSFET
JFETS & THEIR CHARACTERISTICS

• JFETs are typically much smaller than bipolar transistors. This size
difference makes JFETs particularly suitable for use in ICs, where the
size of each component is critical.
channel = area between the source and drain terminals
n -channel JFET=n -type semiconductor material is used for the channel
p -type regions= Embedded on each side of the n –channel
Gate=Each p region
a dual-gate JFET=When the manufacturer connects a separate lead to
each gate
=FET. Dual-gate JFETs are most commonly used in frequency mixers,
circuits that are frequently encountered in communications electronics.
SCHEMATIC SYMBOLS
JFETS OPERATION

the current fl ow in an n -channel JFET with the p -type gates left

disconnected. Here the amount of current fl ow depends upon
two factors: the value of the drain-source voltage, VDS , and the
drain-source resistance, designated rDS. Furthermore, the ohmic
value of rDS is dependent on the doping level, cross- sectional
area, and length of the doped semiconductor material used for
the channel.

electrons fl ow in the channel between the two p -type gate

regions. Because the drain is made positive relative to the
source, electrons fl ow through the channel from source to
drain. In a JFET, the source current, IS , and the drain current,
ID , are the same. In most cases, therefore, the current fl ow in
the channel of a JFET is considered to be only the drain current,
ID.
GATE ACTION
The gate regions in a JFET are embedded on
each side of the channel to help control the
amount of current fl ow.
SHORTED GATE-SOURCE JUNCTION & DRAIN CURVES
TRANSCONDUCTANCE CURVE
Notice that the graph is not linear because equal
changes in VGS do not produce equal changes in
ID .
TRANSCONDUCTANCE CURVE

• When the values of

IDSS and VGS(off) are
known for any JFET, the
drain current, ID ,
This Formula holds true only when VDS is equal
to or greater than VDS (P).
can be used for any JFET ( n -channel or p -
channel) when IDSS and VGS (off) are known.
MORE ABOUT OHMIC REGION

• When VDS is below VDS (P), the forula above no longer applies
• The ohmic resistance of a JFET can be determined for any value of
VGS by using the following formula:

where RDS(on) is the ohmic resistance when VDS is small and VGS 0 V.
JFET BIASING TECHNIQUES

• Many techniques can be used to bias JFETs. In all cases, however, the
gate-source junction is reverse-biased. The most common biasing
techniques are covered in this section including gate bias, self-bias,
voltage divider bias, and current-source bias.
GATE BIAS

• Gate bias is seldom used with JFETs because the characteristics of the
individual JFETs used in mass production may vary over a wide range.
Thus, for some circuits, the amount of VGS applied to the JFET may
provide a very large drain current, whereas in other circuits, the same
gate voltage might reduce the drain current, ID , to nearly zero.
Self-Bias
• Self-bias is very stable because any increase in the drain current, ID ,
causes VGS to increase. The increase in VGS causes the drain current,
ID , to decrease, thereby offsetting the original increase in drain
current. Likewise, a decrease in the drain current, ID , causes VGS to
decrease. This decrease in VGS causes the drain current, ID , to
increase to its original value.
Voltage Divider Bias
• voltage divider bias is more stable than either gate bias or self-bias.
Voltage divider bias, however, does have its drawbacks. The value of
ID for a given value of VGS varies from one JFET to the next, making it
diffi cult to predict the exact values of ID and VD for a given circuit.
Current-Source Bias
Figure shows one of the best ways to bias JFETs. The npn
transistor with emitter bias acts like a current source for the
JFET. The drain current, ID , equals the collector current, IC ,
which is independent of the value of VGS, therefore:
JFET Amplifiers
Because of the extremely high input impedance of a JFET, the input
current is generally assumed to be 0 A and the current gain of a JFET
amplifier is an undefined quantity
For any JFET amplifi er, the input signal that drives the gate (or source)
should never be so large that it forward-biases the gate-source
junction.
 Common-Source (CS) Amplifi er—DC Analysis
• For a common-source amplifi er, the input voltage is applied to the gate and
the output is taken at the drain. A common-source amplifi er has high input
impedance and moderate voltage gain. Also, the input and output voltages
are 180° out of phase.
Common-Drain (CD) Amplifi er
usually referred to as a source follower. This circuit is similar to the
emitter follower circuit used with bipolar transistors
Common-Gate (CG) Amplifi er
• A common-gate amplifi er has a moderate voltage gain. Its big
drawback, however, is that Zin is quite low
WHAT IS A MOSFET?
It is a type of Field Effect Transistor and it
is voltage controlled device. It is primarily
used for switching or amplifying electronic
signals in the electronic devices. It is the
most commonly used transistor and it can
MOSFET
be used in both analog and digital circuits.

MOSFET stands for Metal Oxide

Semiconductor Field Effect Transistor.
WHAT IS A MOSFET?
The key difference between JFETs and
MOSFETs is that the gate terminal in a
MOSFET is insulated from the channel.
Because of this, MOSFETs are
sometimes referred to as insulated gate
FETs or IGFETs. Because of the insulated
gate, the input impedance of a MOSFET
is many times higher than that of a JFET
WHAT IS A MOSFET?
The metal-oxide-semiconductor field effect transistor has a gate,
source, and drain just like the JFET. Like a JFET, the drain current in a
MOSFET is controlled by the gate source voltage VGS . There are two
basic types of MOSFETs: the enhancement-type and the depletion-
types.
MOSFET & THEIR CHARACTERISTICS
• Cut off region: Cut-off region is a region in which the MOSFET will be OFF as there will be no
current flow through it. In this region, MOSFET behaves like an open switch and is thus used
when they are required to function as electronic switches.
• Ohmic region: Is a region where in the current increases when the drain source voltage
increases. When MOSFETs are made to operate in this region, they can be used as amplifiers.
• Saturation region: Drain current is constant for drain source voltage. This operating region is
chosen whenever MOSFETs are required to perform switching operations. This occurs when the
drain source voltage reaches pinch off voltage.
• Depletion mode: The MOSFET is ON by default. When negative voltage is applied to the gate
terminal it operates in the depletion mode and when positive voltage is applied, it operates in the
enhancement mode.
• Enhancement mode: When positive voltage is applied to the gate terminal, it starts conducting
and the current starts to flow.
DEPLETION-TYPE MOSFET
ZERO-GATE VOLATGE
A depletion-type MOSFET can operate with either positive or negative gate voltages. As shown
in Figure below , the depletion-type MOSFET also conducts with the gate shorted to the source for
VGS 0 V
P-CHANNEL DEPLETION-TYPE MOSFET

• shows the construction, schematic

symbol, and transconductance
curve for a p -channel depletion-
type MOSFET.
• the channel is made of p -type
semiconductor material and the
substrate is made of n -type
semiconductor material. Because
of this, p -channel depletion-type
MOSFETs require a negative drain
voltag
ENHANCEMENT-TYPE MOSFET

• the p -type substrate makes contact

with the SiO 2 insulator. Because of
this, there is no channel for
conduction between the drain and
source terminals.
• The drain and gate are made
positive with respect to the source.
With VGS 0 V, there is no channel
between the source and drain and
so the drain current, ID , is zero.
ENHANCEMENT-TYPE MOSFET APPLICATION

• The most important application is in digital computer electronics

ZERO BIAS FOR DEPLETION-TYPE MOSFETS

• This form of bias is called zero bias because the potential difference
across the gate-source region is zero.
DRAIN FEEDBACK BIAS

• Only way to bias enhancement-type MOSFETs

HANDLING MOSFETS

One disadvantage of MOSFET devices is their extreme sensitivity to

electrostatic discharge (ESD) due to their insulated gate-source regions. The SiO
2 insulating layer is extremely thin and can be easily punctured by an
electrostatic discharge.
1. Never insert or remove MOSFETs from a circuit with the power on .
2. Never apply input signals when the dc power supply is off .
3. Wear a grounding strap on your wrist when handling MOSFET devices. This
keeps the body at ground potential by bleeding off any buildup of static
electric charge.
4. When storing MOSFETs, keep the device leads in contact with conductive
foam, or connect a shorting ring around the leads