JFET Construction,

Characteristics and
Specification Sheet

Lesson 5
 Specific Objective
• Discuss and identify the construction and operating
characteristics of Junction Field Effect (JFET)
• Discuss and explain the information provided on the
specification sheet for each type of FET
• Discuss DC analysis of the various types of FETs
 Introduction

• One of the most important characteristics of the FET is its high

input impedance. Typical ac voltage gains for BJT amplifiers are
a great deal more than for FETs. FETs are more temperature
stable than BJTs, and FETs are usually smaller than BJTs, making
them particularly useful in integrated-circuit (IC) chips.
 FETs vs BJTs
Similarities Differences
• • FETs are voltage controlled
devices. BJTs are current
• Amplifiers controlled devices.
• • FETs have higher input
impedance. BJTs have higher
gains.
• Switching devices • • FETs are less sensitive to
temperature variations and
are more easily integrated on
• Impedance matching ICs.
circuits • • FETs are generally more
static sensitive than BJTs.
BJT (current
controlled)

vs

FET (voltage-
controlled)
amplifiers.
 Construction
• Note that the major part of the
structure is the n-type material,
which forms the channel between
the embedded layers of p-type
material.
• The top of the n-type channel is
connected through an ohmic
contact to a terminal referred to
as the drain (D), whereas the
lower end of the same material is
connected through an ohmic
contact to a terminal referred to
as the source (S).
• The two p-type materials are
connected together and to the
gate (G) terminal.
 Construction

• The drain and the source are

connected to the ends of the n-type
channel and the gate to the two
layers of p-type material.
• In the absence of any applied
potentials (voltage) the JFET has two
p–n junctions under no-bias
conditions.
• The result is a depletion region at
each junction resembles the same
region of a diode under no-bias
conditions.
• Recall also that a depletion region is
void of free carriers and is therefore
unable to support conduction.
 JFETs type and
construction
• 2 types
• n-channel
• p-channel

• The n-channel is more widely used.

• There are three terminals:

• Drain (D) Source (S) are connected to the n-channel
• Gate (G) is connected to the p-type material
 • •JFET: Junction FET
• •MOSFET: Metal–Oxide–

FET Types Semiconductor FET

– D-MOSFET: Depletion MOSFET
– E-MOSFET: Enhancement
MOSFET
 JFET Operation:

• The Basic Idea

• JFET operation can be compared to a
water spigot (faucet).

• The source of water pressure is the

accumulation of electrons at the
negative pole of the drain-source
voltage.

• The drain of water is the electron

deficiency (or holes) at the positive pole
of the applied voltage.

• The control of flow of water is the gate

voltage that controls the width of the n-
channel and, therefore, the flow of
charges from source to drain.
 • There are three basic operating
conditions for a JFET:

Operating 1. VGS = 0, VDS increasing to

Characteristics 2.
some positive value
VGS < 0, VDS at some
of JFETS positive value
3. Voltage-controlled resistor
 JFET Operating Characteristics:
VGS = 0 V

• Three things happen when VGS = 0 and VDS is increased from 0 to a

more positive voltage

1. The depletion region between p-gate and n-channel increases as

electrons from n channel combines with holes with from p-gate.
2. Increasing the depletion region, decreases the size of the n-channel
which increases the resistance of the n-channel.
3. Even though the n-channel resistance is increasing, the current (ID)
from source to drain through the n-channel is increasing. This is
because VDS is increasing.
JFET at
VGS = 0V
and
VDS > 0V
varying
reverse-bias
voltage
across the p-
n junction of
an n-channel
JFET
 JFET Operating
Characteristics:
Pinch Off
• If VGS = 0 and VDS is increased to a
more positive voltage, then the
depletion zone gets so large that it
pinches off the n-channel.

• the current in the n-channel (ID)

would drop to 0A, but it does the
opposite–as VDS increases, so does
ID.
 JFET Operating Characteristics:
Saturation

• At the pinch-off point:

– Any increase in VGS does not produce any increase in ID. VGS
at pinch-off is denoted as Vp.
– ID is at saturation or maximum. It is referred to as IDSS.
– The ohmic value of the channel is maximum.
JFET
Saturation
characteristics
 JFET Operating
Characteristics:

• As VGS becomes more

negative, the depletion
region increases.
 As VGS becomes more
negative:
• The JFET experiences pinch-off at a lower voltage (VP).

• ID decreases (ID < IDSS) even though VDS is increased.

• Eventually ID reaches 0 A VGS at this point is called Vpor VGS (off)

• Also note that at high levels of VDS the JFET reaches a breakdown situation.
ID increases uncontrollably if VDS > VDSmax.
 JFET Operating Characteristics:
Voltage-Controlled Resistor
The region to the left of the pinch-off point is
called the ohmic region.

The JFET can be used as a variable resistor, where

VGS controls the drain-source resistance (rd).

As VGS becomes more negative, the resistance

(rd) increases
n-channel
JFET
characteristics
with IDSS =
8mA and Vp
=-4V
 p-channel JFET

• The p-channel JFET behaves the same

as the n-channel JFET, except the
voltage polarities and current
directions are reversed.
p-channel JFET characteristics with IDSS = 6mA and Vp = +6V
 JFET symbols
a.) n-channel; b.) p-channel