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Exam 2 is on Friday April 29
Comprehensive, but will focus on lectures 11 and later 60 minutes 1 standard 8.5x11 note sheet (front & back) Bring your calculator Lab solutions and last years exam posted on website
No class next Monday or Tuesday Final Project Report Due Tuesday by 5PM
Email me a soft copy of your report
Agenda
Electrical Channel Issues Optical Channel Optical Transmitter Technology Optical Receiver Technology Optical Integration Approaches
DTX[N:0]
Deserializer
Serializer
DRX[N:0]
Optical Channel
Optical Channels
Short distance optical I/O channels are typically either waveguide (fiber)-based or free-space Optical channel advantages
Much lower loss Lower cross-talk Smaller waveguides relative to electrical traces Potential for multiple data channels on single fiber via WDM
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core
cladding n2
Free-space (air or glass) interconnect systems have also been proposed Optical imaging system routes light chip-to-chip
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VCSEL emits light perpendicular from top (or bottom) surface Important to always operate VCSEL above threshold current, ITH, to prevent turn-on delay which results in ISI Operate at finite extinction ratio (P1/P0)
Po = (I I TH ) Slope Efficiency = P W I A
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MTTF =
A e 2 j
EA k
1 1 T j 373
[2]
BW I avg I TH
1. 2.
1 MTTF BW 4
D. Bossert et al, "Production of high-speed oxide confined VCSEL arrays for datacom applications," Proceedings of SPIE, 2002. M. Teitelbaum and K. Goossen, "Reliability of Direct Mesa Flip-Chip Bonded VCSELs," LEOS, 2004. 14
VCSEL Drivers
Current-Mode VCSEL Driver
LVdd Pout
Dummy Load
D+ DImod Ibias
5:1 I-1[7:0]
x1
D0 Z
0
5:1
x4 I0[7:0]
I0
Current-mode drivers often used due to linear L-I relationship Equalization can be added to extend VCSEL bandwidth for a given current density
D1 Z
-1
5:1
x1 I1[7:0]
I1
D2 Z-2
5:1 x1 I2[7:0]
I2 Ileak IDC[7:0]
S. Palermo and M. Horowitz, High-Speed Transmitters in 90nm CMOS for High-Density Optical Interconnects," ESSCIRC, 2006.
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*N. Helman et al, Misalignment-Tolerant Surface-Normal Low-Voltage Modulator for Optical Interconnects," JSTQE, 2005.
Absorption edge shifts with changing bias voltage due to the quantum-confined Stark or FranzKeldysh effect & modulation occurs Modulators can be surface-normal devices or waveguide-based Maximizing voltage swing allows for good contrast ratio over a wide wavelength range Devices are relatively small and can be treated as lump-capacitance loads
10 500fF depending on device type
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Refractive devices which modulate by changing the interference light coupled into the ring with the waveguide light Devices are relatively small (ring diameters < 20m) and can be treated as lumped capacitance loads (~10fF) Devices can be used in WDM systems to selectively modulate an individual wavelength or as a drop filter at receivers
Optical Device Performance from: I. Young, E. Mohammed, J. Liao, A. Kern, S. Palermo, B. Block, M. Reshotko, and P. Chang, Optical I/O Technology for Tera-Scale Computing," ISSCC, 2009.
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[Rabus]
Ring resonators can act as both modulators and add/drop filters to steer light to receivers or switch light to different waveguides Potential to pack >100 waveguides, each modulated at more than 10Gb/s on a single on-chip waveguide with width <1m (pitch ~4m)
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Pulsed-Cascode Driver
INhigh
Vdd Vdd
MP1
midp
MP2
gp2
out gn2
MN2
Vdd MP3
midn
MN1
INlow
Gnd
gn1
S. Palermo and M. Horowitz, High-Speed Transmitters in 90nm CMOS for High-Density Optical Interconnects," ESSCIRC, 2006. 19
Refractive modulator which splits incoming light into two paths, induces a voltage-controlled phase shift in the two paths, and recombines the light in or out of phase Long device (several mm) requires driver to drive low-impedance transmission line at potentially high swing (5Vppd) While much higher power relative to RRM, they are less sensitive to temperature variations
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LA stages
RF
TIA
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p-i-n Photodiode
[Sackinger]
=
Responsivity:
pd q I = = 8 105 ( pd ) Popt hc
(mA/mW)
Quantum Efficiency:
pd = 1 e W
Normally incident light absorbed in intrinsic region and generates carriers Trade-off between capacitance and transit-time Typical capacitance between 100-300fF
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SiO2 0.75 um Cu
Cu
Detector
Lateral Metal-Semiconductor-Metal (MSM Detector) Silicon Nitride Waveguide-Coupled Direct Germanium deposition on oxide
I. Young, E. Mohammed, J. Liao, A. Kern, S. Palermo, B. Block, M. Reshotko, and P. Chang, Optical I/O Technology for TeraScale Computing," IEEE Journal of Solid-State Circuits, 2010.
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Hybrid Integration
[Kromer] [Schow] [Mohammed]
Wirebonding
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Optical Layer
[Young]
[Batten]
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Unified optical interconnect for on-chip core-to-core and offchip processor-to-processor and processor-to-memory
I. Young, E. Mohammed, J. Liao, A. Kern, S. Palermo, B. Block, M. Reshotko, and P. Chang, Optical I/O Technology for TeraScale Computing," IEEE International Solid-State Circuits Conference, 2009.
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Conclusion
Thanks for the fun semester!
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