Proceedings of the 2003 IEEE InternationalConference on Robotics,IntelligentSystems and Signal Processing Changsha, China - October 2003

Design, Modeling, and Fabrication of an Integrated Micromechanical Switch for Potential Applications in Adaptive Fractal Antenna Arrays
Gordon M. H. Chan1,2, Wang3, Wen J. Li',', Chung-Ping Kwongl, Kwai-Man Luk4 and Ke-Li Wu3 Jie
'Department of Automation and Computer-AidedEngineering, The Chinese University of Hong Kong 2Centrefor Micro and Nan0 Systems, The Chinese University of Hong Kong 3Departmentof Electronic Engineering, The Chinese University of Hong Kong 4Departmentof Electronic Engineering, City University of Hong Kong Hong Kong SAR

Abstract
This paper presents the modeling and analysis of a MEMS switch for microwave applications. Parylene polymer (poly-para-xylylene) is studied as a substitution for silicon or metal-based materials in existing capacitive shunt RF switches to enhance the device performance. Through modeling and analysis, we have shown that polymer-based RF switches can be driven by lower actuation voltage with larger offlon capacitance ratio. Fabrication of the switch and integration of the switch with wireless antenna system is underway. Successful development of the switch will potentially enhance the performance of adaptive fractal antennas for microwave applications.

2. MEMS RF Switch
2.1 Switch Design
A schematic diagram of the proposed polymer-based RF switch is shown in Figure 1. The whole structure is 570pm x 770pm in size and is fabricated on the silicon substrate insulated by a SiOz layer on the substrate. The switch consists of a 280pm long and 530pm wide polymer (0.2pm thick Parylene-C) membrane covered by 0.22pm thick gold electrodes on the top, which are 5pm above the bottom electrodes with the same dimensions. The top layer consists of two capacitive electrodes and one signal channel, each being 200pm long and 140pm wide. The two areas overlapped by both the top and bottom electrodes are the effective capacitive areas ( 5 6 103pm2total) where electrostatic attractive force is ~ generated. To minimiz,e the force required to deflect the membrane, the six supporting cantilevers of the membranes are reduced to 60pm wide each.

1. Introduction
The proliferating demand for handheld wireless Personal Digital Assistant and mobile communication devices that require broadband capability presents the necessity for compact antenna systems with high gain and directivity. In this paper, we propose to fabricate micromechanical switches to control arrays of fractal antennas for high frequency RF wireless transmission. MEMS switches have already been found to have many advantages over electrical switches including wider bandwidth capability, minimized insertion loss caused by internal resistance, electromechanical isolation, and lower power u consumption. O r current project focuses on developing the technology to create novel polymer micromechanical structures to improve the performance and enhance the fimctionality of existing switches. Successful microfabrication of an array of novel low-power mechanical switches controllable by an adaptive controller will potentially enable a compact smart antenna system capable of switched-beam functions.

This project is fimded by the Hong Kong Research Grants Council (CUHK4215/01E).
+

Parylene polymer has been widely used in microelectronics, biomedicine, aerospace and semiconductor industry. The mechanical, barrier and dielectric properties of this polyiner are highly favorable to the enhancement of switch performance. Parylene-C has a Young's modulus (2.758GPa) smaller than conventional silicon based materials such as silicon nitride (257.4GPa) and silicon dioxide (74GPa), and metals such as gold (77.2GPa). The decrease of Young's modulus of the membrane structure reduces the amount of energy required for beam deflection and, hence, the actuation voltage sufficient to activate the device. Moreover, a softer membrane also implies a larger allowable air gap between the top and bottom electrodes even with the same actuation voltage. Thus, higher off/on capacitance ratio can be achieved. Parylene-C has high elongation (-200%) and yield strength (55.16MPa), which suggest that the membrane structure is less likely to be damaged by improper handling and sudden shock. Parylene polymer can be coatqd in extreme thin layer on a

0-7803-7925-X/03/$17.00 02003 IEEE

698

substrate. Hence, the moving structures can be fabricated with less weight, which in turn, require less energy for actuation.

This advantage is favorable to MEMS RF switches where power consumption is of particular interest.
Transmission line

Signal

Rs1/2
Port I
Port I1

O n state

(a) Membrane undejlected. Small capacitance.

Transmission line

Port I1

Signal

Off state

( ) Membrane deflected. Large capacitance. b

Figure 2. Equivalent circuit o a capacitive shunt RF f

switch. (a) Top v i m
Top electrode

3. Theoretical Analysis
Ground

Pavlene-C

3.1 Actuation Mechanics

A capacitive shunt RF switch can be simply considered as

(b) Side v i m
an equivalent parallel-plate capacitor with the actuation membrane represented by a linear mass-spring system. If a voltage Vis applied, the equivalent capacitor exhibits an electrostatic attraction force Fe, given by [ 11:

Figure 1. Illustration o the polymer-based RF switch f design.

2.2 Operation Principle The equivalent circuit of a capacitive shunt RF switch is shown in Figure 2. When no voltage is applied to the switch, the actuation membrane remains undeflected, forming a small capacitor wlth the bottom electrodes. RF signal is, thus, allowed to pass through the transmission line, as represented by the on state in Figure 2. When sufficient voltage is applied, the membrane is deflected by the electrostatic attractive force generated between the electrodes, forming a relatively large capacitor. Signal is bypassed from the transmission, as represented by the off state. This normal-on design permits virtually no energy input required when the switch is turned on.

: where E ~ free space permittivity; A: effective capacitor area for electrodes; g : gap distance. In order to actuate the switch, Fe must overcome the spring force F, caused by the deflection of membrane:

F,

= K(g0 - g>

(2)

where K: equivalent spring constant; go: free-state gap distance. Meanwhile, the minimum actuation voltage V , required can be expressed as [2]:

(3)

699

From the above equation, it is observed that the required actuation voltage decreases with the spring constant of the membrane structure. Polymers with relatively smaller Youngs modulus can enhance the switch performance by the reduction of actuation voltage. The equivalent spring constant Keg of a dual layer bridge beam structure can be calculated by the following equations [ 1][3]: (4) t K = 4 + 6()
td

(i.e., 5.1V), it is observed that po1ymer;based MEMS structures may be a solution to low-voltage RF switch actuation.

E + ()()

t
tg

E tg3 + 4(5) + (A)(-)

td Ed
td

(5)

Al, Au, Si3N4, 28 polymer I 14-16 Au, Si A1, Si2Nd I, 30-50 .. Ti, Au, Si3N4 I 15-20 Au, Cu, SrTi03
_ I -

1 1
3.2

0.126 0.048

1
I

1996 [4] 1998 [2] 1998 r5i 1999 [6]

2000 [7]

I
1

4.2 3.6 1.5

2S-

I
I

0.01

(7) where ( E I ) : ~ product term of elastic modulus and moment of inertia; Ee& equivalent Youngs modulus; w: beam width; I: beam length; td: polymer thickness; tg:top electrode thickness; Ed: Youngs modulus of polymer; Eg: Youngs modulus of top electrode. Since the proposed structure contains a total of three bridges, K is equal to three times K e With the use of Equation 3, it is estimated ~ that 5.1V is sufficient for the actuation of the proposed RF switch. A diagram indicating the balance of Fe and F, at different gap distances is shown in Figure 3. Table 1. List of PEMS capacitive RF switches and their actuation voltages.

3.2 Off/On Capacitance Ratio

Being related to the isolation anc! return loss of an electronic device, the offlon capacitance ratio is an important parameter to describe the microwave performance of a RF switch, especially when the signal is of high frequency. The down Cd,,wn and up Cup capacitances, and their ratio are given by [7]:

Electrostatic force

d As 0

As 0

1.E-07

l.E-08

1 J
,

Gap (um) Figure 3. Actuationforces (Fe and FJ vs. gap (g). A list of existing MEMS capacitive RF switches is provided in Table 1. By comparing the actuation voltages reported with our proposed polymer-based membrane

where &d: relative permittivity of structural material; A,: effective capacitive area for signal channel. Given that &d = 3.15 for Parylene-C, the estimated cd,,wn and Cupare 3.9pF and 0.049pF respectively, resulting in an offlon capacitance ratio equal to 79.75. High offlon capacitance ratio is desirable for state recognition. The resultant equivalent capacitance of the switch at different deflection level is plotted in Figure 4. The offlon capacitance ratios reported for several previous MEMS capacitive RF switches are shown in Table 2. By comparing the values of offlon capacitances as shown in the table, polymer-based MEMS structures are feasible to obtain relatively high ratio performance.

700

Capacitance (pp3

gradually. The insertion loss remains small over the frequency range of study (e.g., -0.40dB (@ 20GHz), indicating a unity gain signal transmission. Isolation enhances towards higher frequency and achieves -29dB at 40GHz. The performance of some rep0rted.W switches is provided in Table 4, from which we conclude that the current configuration of proposed switch in this paper conforms to the RF characteristics with the majority. With hrther development, it is expected the performance of this switch may be improved.
Perfect

Gap ( f k t u 3

Figure 4. Capacitance (C) vs. gap distance (a).

cdownlcun

g ( o

Year

80-110 22 600 48 79.8

3.6
~

1.5 2.5-3.5 3 5

1998 [5] 1999 [6] 2000 [7] 2000 [8] 2003 (Our design)

1
Parylene-C Air and substrate

Table 2. O#/on capacitance ratio o some MEMS f capacitive RF switches.

Figure 5. Model of MEMS RF switch.

4. Microwave Characteristics
Material
Electromagnetic simulations are performed to study the microwave characteristics of the proposed switch (Figure 5 and Table 3). As shown in Figure 5, the model of the switch structure is highly simplified and only the portions functioned directly as the signal channel or contributed to the actuation mechanism are included in the model. All electrodes are assumed to be perfect conductors and two signal ports are defined at the ends of the signal channel. The top and bottom electrodes are separated by a thin layer of parylene-C, which is modeled as a dielectric material, on top of a volume of air. By adjusting the thickness of the volume representing the air, the model is adaptive to both the on and off states of the switch. The switch and air are modeled on a thick layer of SiOz substrate and the whole structure is bounded by the radiation boundary. With the use of HFSS (Ansoft Co.), the switch losses and isolation are calculated and plotted in Figure 6. Study of scattering parameters reveals that the current configuration of switch design is optimal at lOGHz, with a 17dE3 return loss SIl (on), 0.12dB insertion loss Szl (on), and 18dB isolation S12(08, low frequency, return loss At approach negative infinity, indicating a matching impedance and minor reflection (i.e., 50Q). When operation frequency is increased, return loss degrades
70 1

Relative permittivity
2.95 3.9

Parylene-C Si02

Loss tangent 0.013

Table 3. Materialproperties used in the model.

0
-10

9 -20
v

-8 3 -30
.3

2 -40

-50

-60

10

20

30

4 0

50

Frequency (GHz)

Figure 6. Simulated RF response.

(b) Deposit and pattern a sacrijkial layer.

Return loss

Insertion loss

Isolation

Polvmer

@5-20GHz -20@30GHz

@10GHz -0.2@20GHz

@5-15GHz -30@40GHz

[4] 1998
r2,

-30 to -15 1998 -0.25@35GH~ -35@35GH~ @5-40GH~ -20 -0.6 -50@35GHz 1999 @22-38GHz @22-38GHz 2000 -0.08@1OGHz -42@5GHz r7,
~

(c) Deposit andpattern the polymer membrane.

Au . .-

I I

-0.16@40GHz

I I

-26@40GHz

I 1

2000
r8,

(4 Deposit andpattern the top electrodes.

- 17@1OGHZ -O.l2@1OGHz - 18@ 1OGHZ

2003
(Our
design)

5. Fabrication
The fabrication of the MEMS RF switch begins with the thermal oxidation of an n-type (100) silicon wafer, followed by the deposition and etching of the gold bottom electrode. A thick layer of AZ1500 photoresist is then spun-on and patterned, forming a sacrificial layer for the air gap. Parylene-C is evaporated and patterned with the use of oxygen plasma etching to form the membrane layer of the structure. The top electrodes and signal channel are then fabricated through the deposition and etching of the top gold layer. Finally, the photoresist is removed and the structure is released. A diagram indicating the fabrication flow of the switch is shown in Figure 7. The RF switch is currently under fabrication and improvement. A prototype is shown in Figure 8.

(e) Release the structure.

Figure 7. Fabricationprocess ofthe MEMS RF switch.

(a) Deposit and pattern the bottom electrode.

Photoresist

Figure 8. A prototype ofthe polymer MEMS RFswitch.

6. Summary
This paper presents the modeling and analysis of a polymer-based MEMS capacitive RF switch for microwave application. With the use of Parylene-C

702

polymer, existing MEMS RF switches may be further enhanced in terms of their actuation voltage and off/on capacitance ratio. The operation principle, theoretical calculations and fabrication process of the proposed switch have been presented in this paper. Ongoing research is being carried out to fabricate and integrate the switch with wireless antenna system. The initial experimental results of our polymer RF switch will be published shortly.

7. Acknowledgement
The authors would like to acknowledge Mr. Jian-Ming Chen for his data collection and preliminary work in this project.

8. References
[l] E. R. Brown, RF-MEMS Switches for IEEE Reconfigurable Integrated Circuits. Transactions on Microwave Theory and Techniques, Vol. 46, No. 11, Nov. 1998, pages 1868-1880. [2] S. Pacheco, C. T. Nguyen, and L. P. B. Katehi, Micromechanical Electrostatic K-Band Switches, I998 IEEE MTT-S International Microwave Symposium Digest, 1998, pages 1569-1572. [3] H. J. D. L. Santos, Introduction to Microelectro Mechanical (MEW Microwave Systems, Boston: Artech House Publishers, 1999. [4] C. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Denniston, S. Chen, and B. Norvell, Characteristics of Micromachined Switches at Microwave Frequencies, I996 IEEE MTT-S International Microwave Symposium Digest, 1996, pages 11411144. [5] C. L. Goldsmith, Z. Yao, S. Eshelman, and D. Demiston, Performance of Low-Loss RF MEMS Capacitive Switches, IEEE Microwave and Guided Wave Letters, Vol. 8, No. 8, August 1998, pages 269271. [6] J. B. Muldavin and G. M. Rebeiz, 30 GHz Tuned MEMS Switches, 1999 IEEE MTT-S International Microwave Symposium Digest, Vol. 4, June 1999, pages 1511-1514. [7] J. Y . Park, G. H. Kim, K. W. Chung, and J. U. Bu, Electroplated RF MEMS Capacitive Switches, Proceedings of IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems, 2000, pages 639-644. [8] S. P. Pacheco, Linda P. B. Katehi, and C. T. C. Nguyen, Design of Low Actuation Voltage RF MEMS Switch, 2000 IEEE MTT-S International Microwave Symposium Digest, 2000, pages 165-168.

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