2N3055A (NPN),

MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon
HighPower Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dctodc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features

CurrentGain BandwidthProduct @ IC = 1.0 Adc

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15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS 115, 180 WATTS

fT = 0.8 MHz (Min) NPN

= 2.2 MHz (Min) PNP
Safe Operating Area Rated to 60 V and 120 V, Respectively
PbFree Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating
CollectorEmitter Voltage

Symbol

2N3055A
MJ15015, MJ15016
CollectorBase Voltage

Value

Unit

VCEO

Vdc
60
120

VCBO

2N3055A
MJ15015, MJ15016

Vdc
100
200

CollectorEmitter Voltage Base

Reversed Biased
2N3055A
MJ15015, MJ15016

VCEV

EmitterBase Voltage

MARKING DIAGRAMS
Vdc

100
200
VEBO

7.0

Vdc

Collector Current Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C
2N3055A

PD

115
0.65

W
W/_C

2N3055AG
AYWW
MEX

MJ1501xG
AYWW
MEX

180
1.03

Total Device Dissipation @ TC = 25_C

Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range

TO204AA (TO3)
CASE 107
STYLE 1

_C

TJ, Tstg

65 to +200

Characteristics

Symbol

Max

Max

Unit

Thermal Resistance, JunctiontoCase

RqJC

1.52

0.98

_C/W

THERMAL CHARACTERISTICS

2N3055A = Device Code

MJ1501x = Device Code
x = 5 or 6
G
= PbFree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

April, 2006 Rev. 6

ORDERING INFORMATION

Publication Order Number:

2N3055A/D

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

60
120

Vdc

0.7
0.1

5.0
1.0

30
6.0

5.0
0.2

1.95
3.0

10
20
5.0

70
70

1.1
3.0
5.0

OFF CHARACTERISTICS (Note 2)

CollectorEmitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0)

2N3055A
MJ15015, MJ15016

Collector Cutoff Current

(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)

2N3055A
MJ15015, MJ15016

Collector Cutoff Current (Note 3)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

2N3055A
MJ15015, MJ15016

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)

2N3055A
MJ15015, MJ15016

Emitter Cutoff Current

(VEB = 7.0 Vdc, IC = 0)

2N3055A
MJ15015, MJ15016

IEBO

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s nonrepetitive)
2N3055A
MJ15015, MJ15016
(VCE = 60 Vdc)

IS/b

ICEO

ICEV

mAdc

ICEV

mAdc
mAdc

mAdc

SECOND BREAKDOWN (Note 3)

Adc

ON CHARACTERISTICS (Note 2 and 3)

DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

0.7

1.8

Vdc

fT

0.8
2.2

6.0
18

MHz

Cob

60

600

pF

td

0.5

ms

tr

4.0

ms

ts

3.0

ms

tf

6.0

ms

DYNAMIC CHARACTERISTICS (Note 3)

CurrentGain Bandwidth Product

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

2N3055A, MJ15015
MJ15016

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)

RESISTIVE LOAD
Delay Time
Rise Time

Storage Time

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%

Fall Time

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

3. Indicates JEDEC Registered Data. (2N3055A)

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2

PD(AV), AVERAGE POWER DISSIPATION (W)

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

200

150
MJ15015
MJ15016
100

2N3055A

50

25

50
75
100
125
150
TC, CASE TEMPERATURE (C)

175

200

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 1. Power Derating

200
TJ = 150C

hFE , DC CURRENT GAIN

100
70
50

55 C

30
20

25C

VCE = 4.0 V

10
7
5
3
2

0.2

0.3 0.5 0.7 1

2
3
5
IC, COLLECTOR CURRENT (AMP)

10

15

2.8
TJ = 25C

2.4
2
IC = 1 A

1.6

0.8
0.4
0
0.005 0.01 0.02

f,
T CURRENTGAIN  BANDWIDTH PRODUCT (MHz)

TC = 25C

V, VOLTAGE (VOLTS)

2.5
2
1.5
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 4 V

0.5

VCE(sat) @ IC/IB = 10
0

0.2 0.3

0.5 0.7

0.05 0.1
0.2
0.5
IB, BASE CURRENT (AMP)

Figure 3. Collector Saturation Region

3.5

8A

1.2

Figure 2. DC Current Gain

4A

10

20

10

5.0

MJ15016

2.0
2N3055A
MJ15015
1.0

0.1

0.2

0.3

0.5

1.0

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

Figure 4. On Voltages

Figure 5. CurrentGain Bandwidth Product

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3

2.0

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

10
7
5

VCC
+30 V
t, TIME (s)

7.5 W

25 ms
+13 V

SCOPE

30
W

2
tr
1
0.7
0.5
0.3

1N6073

11 V

VCC = 30 V
IC/IB = 10
TJ = 25C

0.2

tr, tf 10 ns
DUTY CYCLE = 1.0%

5 V

0.1

td
0.2

10
7
5

400

200

10 15

TJ = 25C

ts

2
tf

0.1
0.7
0.5
0.3
0.2
0.1

0.5 0.7 1
2
3
5
IC, COLLECTOR CURRENT (AMP)

Figure 7. TurnOn Time

C, CAPACITANCE (pF)

t, TIME (s)

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

0.3

VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25C
0.2

0.3

0.5 0.7 1
2
3
5
IC, COLLECTOR CURRENT (AMPS)

2N3055A
MJ15015
MJ15016

Cib

100

50

Cob

30
7

10

20
1.0

15

Figure 8. TurnOff Times

2.0

5.0
10
20
50
100 200
VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

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4

500 1000

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

COLLECTOR CUTOFF REGION
NPN

PNP

10,000

1000
VCE = 30 V

1000

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

VCE = 30 V

100
TJ = 150C
10
100C
1.0

IC = ICES
REVERSE

0.1

FORWARD

100
10

TJ = 150C

1.0
100C
IC = ICES

0.1
REVERSE
0.01

FORWARD

25C

25C
0.01
+0.2

+0.1

0
0.1
0.2
0.3
0.4
VBE, BASEEMITTER VOLTAGE (VOLTS)

0.001
0.2

0.5

Figure 10. 2N3055A, MJ15015

+0.4
0
+0.1
+0.2
+0.3
VBE, BASEEMITTER VOLTAGE (VOLTS)

+0.5

Figure 11. MJ15016

20

20
30 ms

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

0.1

10
100 ms
1 ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT

100 ms
dc

10
20
60
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

0.1ms
10
5.0
1.0ms
2.0
1.0
0.5

0.2

100

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
15

Figure 12. Forward Bias Safe Operating Area

2N3055A

20
30
60
100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

2N3055AG
MJ15015
MJ15015G
MJ15016
MJ15016G

120

The data of Figures 12 and 13 is based on TC = 25_C;

TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.

ORDERING INFORMATION

2N3055A

dc

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

Device

100ms

Package

Shipping

TO204
TO204
(PbFree)

100 Units / Tray

TO204
TO204
(PbFree)
TO204
TO204
(PbFree)

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5

100 Units / Tray

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

PACKAGE DIMENSIONS

TO204 (TO3)
CASE 107
ISSUE Z

A
N
C
T
E
D

SEATING
PLANE

2 PL

0.13 (0.005)
U

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.

T Y

Q
0.13 (0.005)

INCHES
MIN
MAX
1.550 REF
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

PowerBase is a trademark of Semiconductor Components Industries, LLC.

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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2N3055A/D