PROFET BTS426L1

Smart Highside Power Switch

Features

Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection

Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation

Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)

43
V
5.0 ... 34 V
60 m
7.0
A
16
A

TO-220AB/5
5

1
Straight leads

Standard

SMD

Application

C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically

integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ V bb

Voltage

Overvoltage

Current

Gate

source

protection

limit

protection

V Logic

Charge pump

sensor

Level shifter

Limit for
unclamped
ind. loads

Rectifier

IN

ESD

Voltage

OUT

Temperature
sensor

Open load
Short to Vbb
detection

Logic

Load

ST

GND

PROFET

GND

1
Signal GND

1)

Load GND

With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load
current limited by connected load.

Semiconductor Group

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BTS426L1
Pin

Symbol

Function

GND

Logic ground

IN

Input, activates the power switch in case of logical high signal

Vbb

Positive power supply voltage,

the tab is shorted to this pin

ST

Diagnostic feedback, low on failure

OUT
(Load, L)

Output to the load

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 , RL= 1.7 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const.
IL = 7.0 A, ZL = 24 mH, 0 :
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:

Symbol
Vbb
Vbb

Values
43
34

Unit
V
V

60

self-limited
-40 ...+150
-55 ...+150
75

A
C

0.74
1.0
2.0

J
kV

-10 ... +16

2.0
5.0

V
mA

VLoad dump4)
IL
Tj
Tstg
Ptot
EAS
VESD

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC)

Current through input pin (DC)
Current through status pin (DC)

VIN
IIN
IST

see internal circuit diagrams page 6

Thermal Characteristics
Parameter and Conditions
Thermal resistance

2)
3)
4)
5)

Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB5):

min
---

Values
typ
--34

Unit
max
1.67
75

K/W

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the
GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical
without blown air.

Semiconductor Group

2003-Oct-01

BTS426L1
Electrical Characteristics
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

min

Values
typ

Unit
max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)
IL = 2 A

Tj=25 C: RON

--

50

60
120

5.8

100
7.0

Tj=150 C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 C
Output current (pin 5) while GND disconnected or GND pulled
up, Vbb=30 V, VIN= 0, see diagram page 7
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 , Tj =-40...+150C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150C

IL(ISO)
IL(GNDhigh)

--

--

-10

ton
toff

80
80

200
230

400
450

dV /dton

0.1

--

V/s

-dV/dtoff

0.1

--

V/s

5.0
3.5
--

----

V
V
V

--

5.6

34
5.0
5.0
7.0
7.0

-34
33
-42

0.2
--0.5
47

-43
----

V
V
V
V
V

----

10
12
--

25
28
12

--

1.8

3.5

mA

Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart

Tj =-40...+150C: Vbb(on)
Tj =-40...+150C: Vbb(under)
Tj =-40...+25C: Vbb(u rst)
Tj =+150C:
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 12
Tj =-40...+150C:
Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
Overvoltage shutdown
Tj =-40...+150C: Vbb(over)
Overvoltage restart
Tj =-40...+150C: Vbb(o rst)
Overvoltage hysteresis
Tj =-40...+150C: Vbb(over)
7
)
Overvoltage protection
Tj =-40...+150C: Vbb(AZ)
Ibb=40 mA
Standby current (pin 3)
VIN=0
Tj=-40...+25C: Ibb(off)
Tj= 150C:
IL(off)
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C
IGND

6)
7)
8)

A
mA

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 7.
Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group

2003-Oct-01

BTS426L1
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

min

Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)

Diagnostic Characteristics
Open load detection current
(on-condition)

Unit
max

IL(SCp)
Tj =-40C:
Tj =25C:
Tj =+150C:

Repetitive short circuit shutdown current limit

Tj = Tjt (see timing diagrams, page 10)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10)
Reverse battery voltage drop (Vout > Vbb)
IL = -4 A

Values
typ

21
15
11

32
25
17

43
35
24

--

16

--

41
150
---

47
-10
--

53
--32

V
C
K
V

--

610

--

mV

20
10

---

850
750

mA

10

30

IL(SCr)

IL= 40 mA: VON(CL)

Tjt
Tjt
-Vbb
Tj=150 C: -VON(rev)

Tj=-40 C: IL (OL)
Tj=25 ..150C:

Open load detection voltage11) (off-condition) Tj=-40..150C: VOUT(OL)

Internal output pull down
(pin 5 to 1), VOUT=5 V, Tj=-40..150C
RO

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault
conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive
operation.
10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by
the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop
across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status
currents have to be limited (see max. ratings page 2 and circuit page 7).
11) External pull up resistor required for open load detection in off state.

Semiconductor Group

2003-Oct-01

BTS426L1
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Input and Status Feedback12)

Input resistance
Tj=-40..150C, see circuit page 6
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150C

min

RI
Tj =-40..+150C: VIN(T+)
Tj =-40..+150C: VIN(T-)
VIN(T)
IIN(off)

On state input current (pin 2), VIN = 3.5 V,

Tj =-40..+150C

IIN(on)

Delay time for status with open load after switch off
(see timing diagrams, page 11), Tj =-40..+150C
Status invalid after positive input slope
(open load)
Tj=-40 ... +150C:
Status output (open drain)
Zener limit voltage
Tj =-40...+150C, IST = +1.6 mA:
ST low voltage
Tj =-40...+25C, IST = +1.6 mA:
Tj = +150C, IST = +1.6 mA:

td(ST OL4)

12)

td(ST)

VST(high)
VST(low)

Values
typ

Unit
max

2.5

3.5

1.7
1.5
-1

--0.5
--

3.5
--50

V
V
V
A

20

50

90

100

520

1000

--

250

600

5.4
---

6.1
---

-0.4
0.6

If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group

2003-Oct-01

BTS426L1
Truth Table
Input-

Output

level

level

425 L1
426 L1

L
H
L
H
L
H

L
H

H
H
H (L14))
L
L15)
H (L16))
H
L
H
H
H
H

Normal
operation
Open load
Short circuit to
Vbb
Overtemperature
Undervoltage

13)

H
H
H

L
H
L
H
L
H

Overvoltage
L = "Low" Level
H = "High" Level

Status

L
L
L
L
L
L

X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)

Terms

Input circuit (ESD protection)

Ibb
I IN
2

IN

V ST

IN

Vbb

IN

IL
PROFET

I ST

OUT

VON

ESD-ZD I

ST

bb

GND

GND
1
R

IGND

V OUT

GND

ESD zener diodes are not to be used as voltage clamp at DC

conditions. Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).

13)

Power Transistor off, high impedance

with external resistor between pin 3 and pin 5
15) An external short of output to V , in the off state, causes an internal current from output to ground. If R
bb
GND is used, an offset
voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to V may be detected in ON-state by the no-load-detection
bb
14)

Semiconductor Group

2003-Oct-01

BTS426L1
Status output
Open-load detection

+5V

R ST(ON)

ON-state diagnostic condition: VON < RON * IL(OL); IN high

+ V bb

ST

ESDZD

GND

VON

ON

ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6
mA, ESD zener diodes are not to be used as voltage clamp at DC
conditions. Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).

OUT

Open load
detection

Logic
unit

Inductive and overvoltage output clamp

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

+ V bb
V

VON

EXT

OFF
OUT
GND

PROFET
Open load
detection

Logic
unit

VON clamped to 47 V typ.

OUT

Signal GND

Overvolt. and reverse batt. protection

+ V bb

GND disconnect
V

R IN

IN

RI

Z2

Logic
R ST

ST

2
V

IN

PROFET

Z1

Vbb
PROFET

GND

R GND

Signal GND

VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k,

RI= 3.5 k typ.

bb

IN

ST

OUT

ST
GND
1

V
GND

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available.

Semiconductor Group

2003-Oct-01

BTS426L1
Inductive Load switch-off energy dissipation

GND disconnect with GND pull up

E bb
E AS

3
Vbb

IN

IN
OUT

PROFET
4

GND

bb

V
IN ST

ST
GND

ZL
GND

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

Vbb

EAS= Ebb + EL - ER= VON(CL)iL(t) dt,

OUT

with an approximate solution for RL > 0 :

ST
GND

EAS=

1
V

IL L
ILRL
(Vbb + |VOUT(CL)|) ln (1+
)
|VOUT(CL)|
2RL

Maximum allowable load inductance for

a single switch off

bb

L = f (IL ); Tj,start = 150C,TC = 150C const.,

Vbb = 12 V, RL = 0

Normal load current can be handled by the PROFET itself.

L [mH]

Vbb disconnect with charged external inductive

load

high
2

IN

Vbb
PROFET

10000

1000
OUT

ST
GND
1

ER

While demagnetizing load inductance, the energy dissipated in

PROFET is

PROFET
4

RL

EL

EL = 1/2LI L

3
IN

Energy stored in load inductance:

Vbb disconnect with energized inductive load

high

OUT

PROFET

ST
1

ELoad

Vbb

100

bb

If other external inductive loads L are connected to the PROFET, additional

elements like D are necessary.

10

1
2

12

17

IL [A]

Semiconductor Group

2003-Oct-01

BTS426L1
Typ. transient thermal impedance chip case
ZthJC = f(tp)ZthJC [K/W]
10

D=
0.5
0.2
0.1
0.05
0.02
0.01
0

0.1

0.01
1E-5

1E-4

1E-3

1E-2

1E-1

1E0

1E1

tp [s]
Transient thermal impedance chip ambient air
ZthJA = f(tp)ZthJA [K/W]
100

10

D=
0.5
0.2
0.1
0.05
0.02
0.01
0

0.1
1E-5

1E-4

1E-3

1E-2

1E-1

1E0

1E1

1E2

1E3

tp [s]

Semiconductor Group

2003-Oct-01

BTS426L1

Timing diagrams
Figure 2b: Switching an inductive load

Figure 1a: Vbb turn on:

IN
IN

V
bb

t
ST

d(ST)

*)

OUT

OUT

ST open drain

IL
I L(OL)

proper turn on under all conditions

*) if the time constant of load is too large, open-load-status may occur

Figure 2a: Switching a lamp,

Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
IN

ST
IL
V

IL(SCr)

OUT

I L(SCp)

ST

Heating up may require several milliseconds, depending on external conditions

Semiconductor Group

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2003-Oct-01

BTS426L1
Figure 5b: Open load: detection in ON-state, open load occurs in
on-state

Figure 4a: Overtemperature:

Reset if Tj <Tjt

IN
IN

ST

t
d(ST OL1)

d(ST OL2)

ST

OUT

OUT

I
T

normal

open

normal

t
t
td(ST OL1) = 20 s typ., td(ST OL2) = 10 s typ

Figure 5c: Open load: detection in ON- and OFF-state (with

REXT), turn on/off to open load

Figure 5a: Open load: detection in ON-state, turn on/off to open

load

IN

IN

ST

t
d(ST)

d(ST OL4)

ST

V
OUT

I
L

open

d(ST)

OUT

open
t

t
The status delay time td(ST OL4) allows to ditinguish between
the failure modes "open load" and "overtemperature".

Semiconductor Group

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BTS426L1
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN

Vbb

bb

V ON(CL)

Vbb(over)

V bb(o rst)

Vbb(u cp)
V

bb(under)

bb(u rst)

OUT

V OUT

ST
ST open drain
t
t

Figure 6b: Undervoltage restart of charge pump

on-state

off-state

bb(u rst)

V
V

bb(over)

off-state

VON(CL)

V on

bb(o rst)

bb(u cp)

bb(under)

V bb
charge pump starts at Vbb(ucp) =5.6 V typ.

Semiconductor Group

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BTS426L1

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5

Ordering code

BTS426L1

Q67060-S6108-A2

TO-220AB/5, Option E3043

BTS426L1 E3043

Semiconductor Group

SMD TO-220AB/5, Opt. E3062

BTS426L1 E3062A

T&R:

Ordering code
Q67060-S6108-A4

Changed since 04.96

Date
Change
Dec
td(ST OL4) max reduced from 1500
1996 to 800s, typical from 400 to
320s, min limit unchanged
EAS maximum rating and diagram
added
Zth specification added
Typ. reverse battery voltage drop VON(rev) added

Ordering code
Q67060-S6108-A3

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2003-Oct-01

BTS426L1
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall
not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to
warranties of non-infringement, regarding circuits, descriptions and charts
stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and
prices please contact your nearest Infineon Technologies Office in
Germany or our Infineon Technologies Representatives worldwide (see
address list).
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact your
nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected
to cause the failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

Semiconductor Group

14

2003-Oct-01

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