Synthesis and properties of crystalline thin

film of antimony trioxide on Si (100)

M.Yasir1

M. Kuzmin1,2

M.P.J. Punkkinen1

J. Mkel1

M. Tuominen1
1

Abstract
Atomic-scale understanding
and processing of the surface
and interface properties of
antimony trioxide (Sb2O3) are
essential to the development
of nanoscale Sb2O3 materials
for various applications such

Sb2O3 thin films on the Si

initio calculations. The spec-

ent conducting oxides, optical

(100) substrate with a simple

troscopic results show that

coatings, dielectric films, and

process

Sb-

the band gap of Sb2O3 is 3.6

fire retardants. Lack of atomi-

covered Si(100) in proper

eV around the gamma point

cally well-defined, crystalline

conditions. Physical proper-

(i.e., ). Calculations reveal

Sb2O3 templates has however

ties of the synthesized films

energetically favored Sb2O3

hindered atomic resolution

have been elucidated by low

(100) surface structures. The

characterization of the Sb2O3

energy electron diffraction,

findings open a new path for

properties. We report the

scanning tunneling microsco-

the atomic-scale research of

preparation

py and spectroscopy, and ab

Sb2O3.

of

crystalline

by

oxidizing

P. Laukkanen1

K. Kokko1

Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland

2 Ioffe

as photocatalysts, transpar-

J. Dahl1

Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation

Figure 1. (a) Large-scale empty-state

STM image from Sb2O3/Si
(100); tunneling current
0.25 nA and voltage 2.32
V. Inset shows LEED pattern from the same sample. (b) Zoomed-in STM
image with the contour line along the

Figure 2. Zoomed-in empty-state

(left)/ filled state (right) STM image
from Sb2O3/Si(100); tunneling current 0.11 nA and voltage 2.45 V/1.7
V. (Left) The green square is representing that two white protrusion in
a unit cell in the two
orthogonal directions
are dimmer if we
compare it with the
calculated data. The
red square is showing
the actual unit cell of
deposited film. (b)-(f) Different
surface models for Sb2O3 and
corresponding simulated STM
images below the models.

white arrow; tunneling current 0.11 nA

and voltage 2.45 V.

RESULTS

Figure 3. Differentiated STS curve measured from a smooth island area of the
Sb2O3

film.

The

band gap of the

film is found to be
3.6 eV, as deduced
with projections of
the valence and

Summary
The formation of crystalline
cubic Sb2O3 on the Si(100)
substrate has been demonstrated. The synthesis method is simple, and based on

the controlled oxidation of

confirm the deposition of a

and

reveal most probable (100)

Sb-covered Si templates. The

well-ordered

smooth

surface structures for the

substrate temperature and

two-dimensional film. The

Sb2O3 film. The findings

the oxidation time play a key

spectroscopic measurements

open a new path for the re-

role in the properties of de-

show the direct band gap of

search and development of

posited thin film. The pre-

3.60.1 eV for senarmontite

Sb2O3 materials.

sented microscopic results

Sb2O3. Ab initio calculations

conduction band edges on the voltage axis.

References
M. Yasir, M.Kuzmin, M. P. J. Punkkinen,J. Mkel, M.
Tuominen, J. Dahl, P.Laukkanen and K. Kokko, Applied
Surface Sciences, 2015.