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BUT11F/11AF

BUT11F/11AF
High Voltage Power Switching Applications

TO-220F

1

NPN Silicon Transistor

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO

VCEO

Parameter

Value

Units

: BUT11F
: BUT11AF

850
1000

V
V

Collector-Emitter Voltage
: BUT11F
: BUT11AF

400
450

V
V

Collector-Base Voltage

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current (DC)

5

A

ICP

*Collector Current (Pulse)

10

A

IB

Base Current (DC)

2

A

IBP

*Base Current (Pulse)

4

A

PC

Collector Dissipation (TC=25°C)

40

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)

ICES

Parameter
* Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11AF

Test Condition
IC = 100mA, IB = 0

Min.

Typ.

Max.

Units

400
450

V
V

Collector Cut-off Current
: BUT11F
: BUT11AF

VCE = 850V, VBE = 0
VCE = 1000V, VBE = 0

1
1

mA
mA

IEBO

Emitter Cut-off Current

VBE = 9V, IC = 0

10

mA

VCE(sat)

Collector-Emitter Saturation Voltage
: BUT11F
: BUT11AF

IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A

1.5
1.5

V
V

Base-Emitter Saturation Voltage
: BUT11F
: BUT11AF

IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A

1.3
1.3

V
V

1

µs

4

µs

0.8

µs

VBE(sat)

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

VCC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL = 100Ω

* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%

Thermal Characteristics TC=25°C unless otherwise noted
Symbol
RθjC

Parameter
Thermal Resistance, Junction to Case

©2001 Fairchild Semiconductor Corporation

Typ

Max
3.125

Units
°C/W
Rev. A2, August 2001

01 0. COLLECTOR CURRENT 200 400 600 800 1000 1200 VCE[V]. POWER DISSIPATION Ic MAX (Continuous) IC[A]. COLLECTOR-EMITTER VOLTAGE Figure 5. A2. DC current Gain Figure 2.01 1 0. COLLECTOR CURRENT VBE(sat)[V]. Power Derating Rev. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 60 50 40 30 20 10 0 0.01 0.1 1 10 10 IC[A].01 1 PC[W].BUT11F/11AF Typical Characteristics 1000 10 VCE(sat)[V]. SATURATION VOLTAGE IC = 5 IB VBE(sat) 1 0.1 1 8 6 4 2 0 IC[A]. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 10 IC[A].01 0. SATURATION VOLTAGE hFE. August 2001 .1 VCE(sat) 0. COLLECTOR CURRENT BUT11AF BUT11F 0 10 1000 0 25 50 75 100 125 150 175 O TC[ C]. CASE TEMPERATURE Figure 6. Reverse Biased Safe Operating Area 80 10 70 DC 1 0.1 0. COLLECTOR-EMITTER VOLTAGE Figure 3. COLLECTOR CURRENT Figure 1. COLLECTOR CURRENT IC[A]. DC CURRENT GAIN VCE = 5V 100 10 IC = 5 IB 1 0.1 1 0.1 BUT11AF BUT11F 10 100 VCE[V].01 0.

10 0.20 2.80 ±0.54 ±0.BUT11F/11AF Package Demensions 3.50 –0. A2.70) 0.16 ±0. August 2001 .68 ±0.20 4.54TYP [2.10 TO-220F 10.20] 9.80 ±0.35 ±0.40 ±0.70 ±0.54TYP [2.10 ) 0° (3 9.76 ±0.00) (1.18 ±0.20 6.54 ±0.30 ±0.10 (7.20 (0.20 15.20 0.87 ±0.30 MAX1.20 ø3.05 2.54 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev.47 #1 +0.20] 2.75 ±0.00x45°) 15.20 2.

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