SS9012

SS9012
1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.
1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -20 -5 -500 625 150 -55 ~ 150 Units V V V mA mW C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC = -100A, IE =0 IC = -1mA, IB =0 IE = -100A, IC =0 VCB = -25V, IE =0 VEB = -3V, IC =0 VCE = -1V, IC = -50mA VCE = -1V, IC = -500mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -1V, IC = -10mA -0.6 64 40 120 90 -0.18 -0.95 -0.67 Min. -40 -20 -5 -100 -100 202 -0.6 -1.2 -0.7 V V V Typ. Max. Units V V V nA nA

hFE Classification
Classification hFE1 D 64 ~ 91 E 78 ~ 112 F 96 ~ 135 G 112 ~ 166 H 144 ~ 202

2002 Fairchild Semiconductor Corporation

Rev. A4, November 2002

SS9012

Typical Characteristics

-50

IB=-300A IB=-250A

1000

VCE = -1V

IC[mA], COLLECTOR CURRENT

-40

IB=-200A
-30

IB=-150A IB=-100A IB=-50A

hFE, DC CURRENT GAIN

100

-20

-10

-0 -0 -10 -20 -30 -40 -50

10 -10

-100

-1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-1000

1000

VBE(sat)

VCE=-6V

100

-100

VCE(sat)

10

IC=10IB
-10 -10 -100 -1000

1 -1 -10 -100 -1000 -10000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. A4, November 2002

SS9012

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A4, November 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1