280-

Modern IGBT drivers and high-power field-effect transistors

The article is devoted to development of "Electrum AV" for industrial use, with characteristics similar to a modular instrument
and production Semikron CT Concept.
Modern power electronics development concept, the level of technological basis of modern microelectronics cause the active
development of systems based on IGBT-devices with different configurations and capacities. The state program "National
Technological Base" this area are dedicated to two works on the development of a series of medium-power IGBT-modules in the
enterprise "Kontur" (Cheboksary) and a series of high-power IGBT-modules in the enterprise "Silicon" (Bryansk). At the same
time, the use and development of on IGBT-modules is limited by the lack of national systems of driver devices for controlling the
gates of the IGBT. This issue is also relevant for high-power field-effect transistors used in the converter with a voltage systems up
to 200 V.
Currently, the Russian "electronic" market powerful field controller and IGBT-transistors represented companies Agilent
Technologies, IR, Powerex, Semikron, CT Concept. Products IR and Agilent contain only forming apparatus for transistor thief
control signals and the protective circuit and need when working with transistors of high power or at higher frequencies for its use
of additional elements: DC / DC-converter is required power for generating the supply voltages of the output stages, powerful
external output stages for generating gate control signals with the requisite steep fronts protective elements (diodes, diodes, etc.),
the control system interface elements (the input logic, the formation of the half bridge control devices diagrams optically decoupled
status signal state controlled transistor, supply voltage etc.). Powerex company's products also require a DC / DC-converter, and
additional external components are required to align with TTL, CMOS, and fiber optic links. Also lacks the necessary status
signals with galvanic isolation.
Most drivers are functionally complete Semikron firms (series SKHI) and CT Concept (Standart types or SCALE). Drivers CT
Concept Series Standart and SKHI driver is arranged in videpechatnyh board with connectors for connection to the control system
and the control transistor fitted with the necessary elements and with the possibility of adjusting elements of the
consumer. According to its functional and parametric features of the product are similar.
SKHI drivers nomenclature is given in table 1.
Table 1. Nomenclature drivers SKHI
company driver Koli-honors
Eg Mach-zhenie to
type Semikron Kan-fishing control.tranzis-torus, B

Serpent-tionMax
tion eg gate,
imp.O.current, A
The

Max gate
charge,
SCLC

Frequency
kHz

Ex-zhenie
Isola tion,
kV

DU / dt, kV /
microsecond

SKHI 10/12

1200

15 + / -8

9.6

100

2.5

75

SKHI 10/17

1700

15 + / -8

9.6

100

75

SKHI 21A

1200

+ 15 / -0

50

2.5

50

SKHI 22A / 22B

1200

+ 15 / -7

50

2.5

50

SKHI 22A / H4

1700

+ 15 / -7

50

50

SKHI 22B / H4

1700

+ 15 / -7

50

50

SKHI 23/12

1200

15 + / -8

4.8

100

2.5

75

SKHI 23/17

1700

15 + / -8

4.8

100

75

SKHI 24

1700

15 + / -8

50

50

SKHI 26W

1600

15 + / -8

10

100

75

SKHI 26F

1600

15 + / -8

10

100

75

SKHI 27W

1700

15 + / -8

thirty

thirty

10

75

SKHI 27F

1700

15 + / -8

thirty

thirty

10

75

SKHI 61

900

+ 15 / -6.5

50

2.5

15

SKHI 71

900

+ 15 / -6.5

50

2.5

15

SKHIVS 01

1200

15 + / -8

15

0.75

20

2.5

15

Drivers SCALE company CT Concept are based on the basic hybrid assembly and incorporate the key elements to control the
powerful field or IGBTtranzistorami, which are mounted on the circuit board, with the possibility of adjusting the required
elements. The board is also equipped with the necessary connectors and sockets.
Nomenclature of basic drivers of hybrid assemblies SCALE company CT Concept is presented in Table 2.
Driver unit production of "Electrum AV" are completely finished, funktsionalnopolnymi devices, containing all the necessary
elements to control the gates of the power transistors, providing the necessary levels of coordination of current and potential
signals, rise time, and delays, as well as the necessary protection levels controlled transistors with dangerous levels of saturation
voltage (overcurrent or short circuit) and insufficient gate voltage. The applied DC / DC-converters and transistor output stages
have the necessary capacity to ensure controlled switching transistors of any power with a sufficient rate to provide minimal
switching losses. DC / DC Converters and opto-coupler have sufficient levels of galvanic isolation for use in high-voltage systems.
Table 2. The range of base drivers of hybrid assemblies SCALE CT Concept firms
company driver
type CT
Concept

Kolihonors
Kanfishing

Max voltage of
Ex-zhenie
Max imp.outputthe onOut-of-tion Latency,
Ex-zhenie
pit-of-drei
term current, A Ex.tranzis-torus, cardinality W
ns
insulation., In
faith in
B

IGD 508E

15

3300

225

5000

IGD 515E

15

15

3300

225

5000

IGD 608E

15

1200

60

4000

> 50

Trance

IGD608A1 17

15

1700

60

4000

> 50

Trance

IGD 615A

15

15

1200

60

4000

> 50

Trance

IGD615A1 17

15

15

1700

60

4000

> 50

Trance

IHD 215A

15

1,5

1200

60

4000

> 50

Trance

IHD 280A

15

1200

60

4000

> 50

Trance

IHD280A1 17

15

1700

60

4000

> 50

Trance

IHD 680A

15

1200

60

4000

> 50

Trance

IHD680A1 17

15

1700

60

4000

> 50

Trance

IHD 580 F

15

2500

2.5

200

5000

du / dt, kV /
microsecond

entrance

Vols
Vols

Vols

In this paper will be presented MD115 devices, MD150, MD180 (MD115P, MD150P, MD180P) to control single transistors and
MD215, MD250, MD280 (MD215P, MD250P, MD280P) for the half-bridge control devices.

single-channel IGBT driver module and powerful field-effect transistors: MD115, MD150, MD180, MD115P, MD150P,
ID180P
MD115 driver module, MD150, MD180, MD115P, MD150P, MD180P - hybrid integrated circuit for IGBT control and powerful
field-effect transistors, including in the case of parallel connection. The module provides the coordination through the levels of
currents and voltages with the majority of the IGBT and the high-power field-effect transistors with maximum permissible voltage
up to 1700 V, protection against overload or short circuit, undervoltage level of the transistor gate. The driver generates a signal
"accident" in violation of the mode of operation of the transistor. With the help of external elements driver mode is configured for
optimal management of different types of transistors. The driver can be used to control transistors with "Kelvin" outputs or current
control using a current sense resistor. Devices MD115P, MD150P, MD180P contain an embedded DC / DC-converter for power
driver output stages. For MD115 devices, MD150, MD180 requires an external isolated power supply.
Pin assignment
1 - "alarm +"
2 - "accident -"
3 - "Input +"
4 - "entry -"
5 - U pit +" (only models with the suffix "P")
6 - "the U pit -" (only models with the suffix "P")
7 - "General"
8 - "+ E pit"
9 - "exit" - the transistor gate control
10 - "-E pit"
11 - "eg" - control input saturation voltage controlled transistor
12 - "Current" - control input current flowing through the driving transistor

Modules are two-channel IGBT driver and powerful FETs IA215, IA250, IA280, IA215I, IA250I, IA280I
MD215 driver modules, MD250, MD280, MD215P, MD250P, MD280P - hybrid integrated circuit for controlling the IGBT and
powerful field-effect transistors on two channels, both independently and in a half-bridge is turned on, including the parallel
connection of transistors. The driver provides the coordination for current and voltage levels with the majority of the IGBT and the
high-power field-effect transistors with maximum permissible voltage up to 1700 V, protection against overload or short circuit, the
insufficient level of the gate voltage of the transistor. driver inputs are galvanically isolated from the power section with a voltage of
4 kV of isolation. Driver contains internal DC / DC-converters, which form the necessary levels to control the gates of
transistors. The device generates the necessary status signals indicative of operation Transistor moat, and the availability of
food. With the help of external elements driver mode is configured for optimal management of different types of transistors.

Table 4. Key findings of the two-channel IGBT driver module and powerful field-effect transistors
Number
CONCLUSIONS.

designation

Function

Number
CONCLUSIONS.

designation

Function

14

INP1 "+"

Direct control input of the first

channel

15

IR

Measuring collector saturation voltage

control on controlled transistor of the
first channel

13

INP1 "-"

Inverse control input of the first

channel

16

SG 1

control saturation voltage input to the

setting of the threshold and the first
channel blocking time

12

ST "E + pit"

The status of the output stage

supply voltage pervogokanala

17

Out2

The output of the transistor gate

control with adjustable switching time
of controlled transistor of the first
channel

eleven

Cs

Entrance to connect the additional

capacitor (setting delay time) of the
first channel

18

Out1

The output of the transistor gate

control with adjustable time
vyklcheniya managed the first channel
of the transistor

10

CT

Status output accident on controlled

transistor of the first channel

19

-E

pit

The voltage output of the power supply

of the first channel driver

BLOCK

Login lock

20

Gen.

The voltage output of the power supply

of the first channel driver

not used

21

+E

The voltage output of the power supply

of the first channel driver

Entrance to connect the power input

circuit

22

Entrance to connect the power input

circuit

23

In2 "+"

Direct control input of the second

channel

24

In2 "-"

Inverse control input of the second

channel

25

Out1 '

The output of the transistor gate

control with adjustable switching time
of controlled transistor of the second
channel

The status of the output stage

supply voltage of the second channel

26

Out2 '

The output of the transistor gate

control with adjustable switch-off time
of controlled transistor of the second
channel

8
7

+ 5V

6
5

"

E+

pit

pit

'

The voltage output of the power supply

of the second channel driver

Tot '
-E

Pit

The voltage output of the power supply

of the second channel driver

'

The voltage output of the power supply

of the second channel driver

ST "E +
9

Sz9

Entrance to connect the additional

capacitor (setting the switching
delay time) of the second channel

27

SG 1 '

control saturation voltage input to the

setting of the threshold and the second
channel blocking time

ST9

Status output accident on controlled

transistor of the second channel

28

IR '

Measuring collector saturation voltage

control on controlled transistor of the
second channel

pit

Both types of devices and MD1HHH MD2HHH ensure formation transistor gates control signals with adjustable separately the
value of charge and discharge currents, with the required dynamic parameters provide control voltages and the protection
transistor gates in case of insufficient or excessive stress on them. Both types of devices controlled saturation voltage controlled
transistor and produce a smooth emergency load shedding in critical situations, forming a signal optically isolated, signals this. In
addition to these features MD1HHH series devices have the ability to control the current through the transistor is controlled by an
external current-measuring resistor - "shunt". These resistors have a resistance of 0.1 milliohms and up to several facilities in the
tens or hundreds of watts, made on ceramic substrates in the form of bands Nichrome or manganin exact geometry fitting
denomination, also developed Ltd. "Electrum AV". More information about them can be found on the site www.orel.ru/voloshin .
Table 5. The main electrical parameters
The input circuit

Power Supply,

min.

a type.

Max.

4.5

18

Current consumption, mA

not more than 80 with no load of not more than

300mA to the load

Input logic

CMOS 3 -15 V, TTL

Management inputs current, mA

not more than 0.5

The output voltage of Art, The

less than 15

The output current at the output of Art, mA

at least 10

Output circuit
Peak output current, A
MD215

not more than 1.5

MD250

not more than 5.0

MD280

not more than 8.0

Output average current, mA

40

Maximum switching frequency, kHz

no less than 100

The rate of change of voltage, kV / microsecond

at least 50

Maximum voltage on controlled transistor, in

at least 1200

DC / DC converter
The output voltage, V

at least 15

Power, W

at least one of at least six (for models with

index M)

efficiency

not less than 80%

dynamic properties

Delay Input Output t on, ms

less than 1

Delayed tripping t off, ms

not more than 0.5

Delay on the status ms

less than 1

Recovery time after tripping, ms

to 10

<Internal delay switch on the upper and lower transistors t ass, ms / td>

at least 1 (specified containers Ct, Ct ')

Response saturation voltage protection circuit time when the transistor is turned on tblok,
ms

at least one

Threshold voltage
min.

a type.

Max.

protection threshold for under-E Supply,

10.4

eleven

11.7

Protection circuit saturation voltage controlled transistor provides the output off and form a
tion PT signal at the voltage on the "IR" includes,

6.5

Insulation
Isolation voltage control signal power with respect to the signals in

not less than 4000 AC

Insulation voltage DC / DC converter, In

Still DC 3000

Offered drivers allow you to control transistors with a high frequency (100 kHz) that allows us to achieve a very high efficiency
of conversion processes.

MD2HHH series devices have built-in power input logic, which allows control signals with different values from 3 to 15 (CMOS)
and standard TTL levels, while ensuring an identical level of transistor gates control signals and creating a customized using
external capacitors duration of the switching delay of the upper and the lower half-bridge arm, which ensures the absence of
cross-currents.
Features of the application drivers on the example MD2HHH device
Short review
MD215 driver modules, MD250, MD280, MD215P, MD250P, MD280P - universal control modules for switching IGBT and
powerful field-effect transistors.
All types MD2HHH have mutually compatible contacts and differ only in the level of the maximum pulse current.

MD types with higher capacities - MD250, MD280, MD250P, MD280P well suited for most modules, or multiple parallelconnected transistors are used at high frequencies.
Driver MD2HHH series modules represent a complete solution for control and protection issues for IGBT and high-power fieldeffect transistors. In fact, no additional components are required in the audio input or the output side.
Act
Changing the driver output voltage from +18 to -5 V, depending on the control signal can reliably control the IGBT-modules of
any power and from any manufacturer. Due to the high noise immunity, achieved by using a negative control voltage, several field
or IGBT-modules can be connected in parallel without the possibility of spurious switching action and vibrations.
MD215 driver modules, MD250, MD280, MD215P, MD250P, MD280P for each of the two channels contain:

input circuit that provides signal conditioning levels and protective switching delay;

electrical isolation between input circuit and power (output) part;

gate control circuit transistor; to open transistor;

the voltage level control circuit of the power supply driver;

amplifier;

protection against voltage surges in the output driver portion;

electrically isolated voltage source - Converter DC // DC (only for modules with the index n)

Both channel drivers operate independently of each other.

Due to electrical isolation, undertaken with the help of transformers and optocouplers (subjected to the test voltage of 2650 V
AC, 50 Hz for 1 min.) Between the input circuit and the power unit, as well as an extremely high rate of voltage increase - 30 kV /
microsecond, driver modules are used in schemes with high potential voltages and large potential jumps occurring between the
power unit and the control circuit (control).
Very short delay times of a number of drivers MD2HHH allow their use in high-frequency power supplies, high-frequency
converters and resonance converters. Thanks to the extremely short time delay, they guarantee trouble-free operation under the
management of the bridge.
One of the main functions of a number of drivers MD2HHH - guarantee reliable protection of controlled power transistors
against short circuit and overload. Emergency transistor state is determined by the voltage at the collector of the power transistor
open. If the threshold is exceeded, a user-defined, the power transistor is turned off and remains locked until the end of the active
level of the signal at the control input.After that, the transistor can be switched on again applying the active level to the control
input. This protection concept is widely used for reliable protection of the IGBT-transistors.
Functional purpose of outputs
Conclusion 14 (INP1 "+"), 13 (INP1 "-")
Conclusions 13 and 14 are control inputs of the driver. Controlled by serving them the TTL logic levels.Input INP1 "+" is direct,
that is, upon application of a logic 1 is the opening of the power transistor and feeding 0 - closing it. Input INP1 "-" is inverted, that
is, upon application of a logic 1 occurs the closing of the power transistor, and when applying 1 - its opening. Usually INP1 "-" is
connected to a common conductor input of the driver, and on input INP1 "+" performed its management. Inverting and
noninverting driver switch is shown in Figure 10.
Table 6 shows the state diagram of the driver channel.
Electrical isolation between input and output part of the driver on these findings by using optocouplers.Their use is excluded
the possibility of exposure to transients occurring on the power transistor in the control circuit.
Table 6. The state diagram of one channel driver
In1 + Vh1-

The voltage on the gate of the transistor <rules

The saturation voltage of the transistor> rules

Article Article "E +pit " O

The input circuit has a built-in protection, which excludes the opening of both IGBT half-bridge at the same time. If the control
inputs of both channels to apply active control signal, there will be the blocking scheme, and both the power transistor will be
closed.
driver modules must be located as close to the power transistors and connect with them as short conductors. Input In1 '+' and
In1 '-' may be connected with the conductors and the control circuit controls a length of 25 cm.
And conductors must go hand in hand. In addition, inputs INP1 "+" and INP1 "-" can be connected to the control circuit and

control via twisted pair. A common conductor to the input circuit must always be supplied separately to both channels for reliable
transmission of control pulses.
Taking into account that a reliable transmission of control pulses occurs in the case of very long pulse, the entire configuration
must be checked in case of a short control pulse minimum.
Conclusion 12 (ST "E + pit")
Pin 12 is a status output, confirming the presence of power (+18 V) to the output (power) of the driver.He assembled the circuit
with open collector. In normal operation the driver (and sufficient available power level it) a status output terminal connected to a
common control circuit via transistor open. If this status the output plug on the circuit shown in Figure 11, the emergency will
match the high level of stress on it (+5).Normal operation the driver will meet the low level voltage in this a statutory
withdrawal. Typical value of current flowing through the output status corresponding to 10 mA, hence, R resistor value is
calculated according to the formula R = U / 0,01,

where U - supply voltage. By reducing the power supply voltage drops below 12 V is switched off the power transistor and the
lock of the driver.
Conclusion 11 (Cs)
Derivation 11 connects an additional capacitor, which increases the time delay between input and output pulse tOn on the
driver. By default (without the additional capacitor) this time exactly 1 microsecond, so on pulses shorter than 1 microsecond
driver does not react (Surge Protection). The main purpose of this delay is to eliminate the occurrence of through currents in the
half-bridge. Through currents cause heating of the power transistors, scram, increase current consumption, degrade the efficiency
of the scheme. With the introduction of this delay, the two driver channels loaded to half-bridge, can be controlled with one signal
in the form of a meander.
The required delay time, ms

Installed capacity, pF

510

1200

For example, the module 150 has 2MBI delay shutdown 3 microseconds, therefore, to prevent the occurrence of through
currents in the unit under the joint management of channels, it is necessary to put an additional capacity of at least 1200 pF on
both channels.
To reduce the effect of ambient temperature on the time delay is necessary to choose capacitors with low TKE.
Conclusion 10 (ST)
Pin 10 is a status output of the accident at the power transistors of the first channel. Logic high level at the output corresponds
to the normal operation of the driver and low level - an accident. The accident occurs in case of exceeding the saturation voltage

across the power transistor threshold. The maximum current flowing through the output is 8 mA.

Pin 9 (UNIT)
Pin 6 is the control input of the driver. When submitting to it a logical unit of work occurs driver blocking and blocking voltage
supply to the power transistors. lock entrance is common to both channels. For normal operation, the driver needs to be supplied

to this input a logic zero.

Pin 8 is not used.
Conclusions 7 (+5 V), and 6 (general)
Conclusions 6 and 7 are inputs for power supply to the driver. Power is supplied from a source 8 W and an output voltage of 5
0,5 V. Power supply must be connected to the driver conductors short (to reduce losses and increase noise immunity). In case
the connecting conductors have a length of 25 cm, is necessary therebetween as close as possible to the driver to put the antiinterference capacity (ceramic capacitor of 0.1 microfarads).
Conclusion 15 (IR)
The output 15 (measured collector) is connected to the collector of the power transistor. After it is done in the open voltage
control transistor. In the event of overload or short-circuit voltage of the transistor to open sharply. Upon exceeding the threshold
voltage value at the collector of transistor occurs locking power transistor and triggered status ST accident. Timing diagrams of
processes occurring in the driver when the protection is activated, shown in Figure 7. protection threshold can be reduced by
connecting the series of interconnected diodes, the threshold saturation voltage U us. . Then 7 = -n U pr.VD, where n - the number
of diodes, the U pr.VD - voltage drop across the diode is open. If the power transistor is powered from a source 1700, you must
install an additional diode breakdown voltage of not lower than 1000 V. The cathode of the diode is connected to the collector of
the power transistor. Operating time can be adjusted by 16 O-SG 1.
Conclusion 16 (SG 1)
Conclusion 16 (measurement collector), in contrast to the output 15 has no built-in diode and limiting resistor. It is necessary to
connect the capacitor, which determines the defense saturation voltage transistor operation in the open. This delay is necessary in
order to eliminate the influence of noise on the circuit. By connecting the capacitor protection operation time increases in
proportion to the capacity of the lock t = 4 U With us. pore where C -. capacitance pF. This time is added to the internal delay time
t off drivers (10%) = 3 ms. By default, the driver is the capacitance C = 100 pF, thus tripping delay of t = 4100 6,3 + t off (10%) =
5.5 ms. If necessary, this time can be increased by connecting the capacitance between the output 16 and the common power
wire of the power unit.

Conclusion 17 (chan.2) and 18 (OUT 1)

Conclusions The 17 and 18 are the driver outputs. They are designed to connect the power transistors and adjust the time of
their inclusion. In conclusion 17 (chan.2) occurs positive potential supply (+18 V) to the gate of a control module and on terminal

18 (OUT 1) - the negative potential (-5 V). In the case of the need for tight control of the fronts (about 1 ms) and very high power
load (two modules 2MBI 150 in parallel) is permissible direct connection of these outputs to the control terminal module. If you
need to tighten the edges or restrict current control (in the case of high load), the modules must be connected to terminals 17 and
18 through the limiting resistors.
In case of exceeding the threshold voltage saturation occurs protective smooth voltage drop at the gate of the control
transistor. time by reducing the voltage to the level of the gate of transistor 90% t off (90%) = 0,5mks to a level of 10% t off (10%)
= 3 ms. Smooth reduction of the output voltage is necessary in order to eliminate the possibility of a power surge.
Conclusion 19 (-E pit), 20 (Tot.) And 21 (+ E pit)
Conclusions 19, 20 and 21 are the outputs of the power supply of the driver. These findings supplied voltage DC / DCconverter driver. In the case of type MD215 drivers, MD250, MD280, without built-in DC / DC-converters here to connect an
external power supply 19 output of -5 V, 20 conclusion - total 21 18 In conclusion to the current up to 0.2 A.
Calculation and selection of drivers
Initial data for calculation is the input capacitance of the module with the I or equivalent charge Q Rin, the input resistance of
the module R Rin, the scope of the input voltage of the module. U = 30 (given in the background information on the module), the
maximum operating frequency at which the module works f max.
Need to find a pulse current flowing through the control module Imax input, maximum output DC / DC-converter P.
Figure 16 shows the equivalent input circuit module, which consists of a gate capacity and limiting resistor.

If the initial data set to the charge Q

Q Rin / U. The

Rin

, it is necessary to recalculate it to the equivalent input capacitance C

of I

Reactive power is allocated to the input module capacity is calculated according to the formula Pc = f Q Rin U. The Total
power DC / DC-converter driver P is made up of the power consumption of the output stage driver Pout, and reactive power
allocated to the input capacitance Pc module: P = P + O Pc.
The operating frequency and voltage swing at the input of the module in the calculations take the maximum, therefore,
received the maximum possible during normal operation of power DC / DC-converter driver.
Knowing the resistance of the R-limiting resistor, you can find a pulse current flowing through the driver: I of
the R.

max

= the U /

According to the results of calculations can be made to select the most optimal driver needed to control power module.