2N3819

Vishay Siliconix

N-Channel JFET

PRODUCT SUMMARY
VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

v 8

25

FEATURES

BENEFITS

APPLICATIONS

D Excellent High-Frequency Gain:

Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA

D
D
D
D
D

D
D
D
D

Wideband High Gain

Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification

High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches

DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.

Its TO-226AA (TO-92) package is compatible with various

tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.

TO-226AA
(TO-92)
S

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V

Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Document Number: 70238
S04028Rev. D ,04-Jun-01

Notes
a. Derate 2.8 mW/_C above 25_C
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2N3819
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
Parameter

Symbol

Test Conditions

Min

Typa

V(BR)GSS

IG = 1 mA , VDS = 0 V

25

35

VGS(off)

VDS = 15 V, ID = 2 nA

Max

Unit

Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb

IDSS

Gate Reverse Current

VDS = 15 V, VGS = 0 V

IGSS

Gate Operating Currentc

Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Voltage
Gate-Source Forward Voltage

VGS = 15 V, VDS = 0 V
TA = 100_C

10

20

mA

0.002

nA

0.002

mA

IG

VDG = 10 V, ID = 1 mA

20

ID(off)

VDS = 10 V, VGS = 8 V

rDS(on)

VGS = 0 V, ID = 1 mA

VGS

VDS = 15 V, ID = 200 mA

VGS(F)

IG = 1 mA , VDS = 0 V

pA
W

150
0.5

2.5

7.5
V

0.7

Dynamic
Common-Source Forward Transconductancec

gfs

Common-Source Output Conductancec

gos

Common-Source Input Capacitance

Ciss

Common-Source Reverse Transfer Capacitance

Crss

Equivalent Input Noise Voltagec

VDS = 15 V
VGS = 0 V

f = 1 kHz

5.5

f = 100 MHz

1.6

5.5

f = 1 kHz
VDS = 15 V, VGS = 0 V, f = 1 MHz

en

VDS = 10 V, VGS = 0 V, f = 100 Hz

6.5
mS

25

50

2.2

0.7

mS
pF
nV
Hz

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.
c. This parameter not registered with JEDEC.

NH

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage
10

gfs

12

IDSS @ VDS = 15 V, VGS = 0 V

gfs @ VDS = 15 V, VGS = 0 V
f = 1 kHz

0
0

VGS(off) Gate-Source Cutoff Voltage (V)

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7-2

10

rDS(on) Drain-Source On-Resistance ( )

16

100
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz

400

80

rDS

300

60
gos

200

40

100

20

gos Output Conductance (mS)

IDSS

500
gfs Forward Transconductance (mS)

IDSS Saturation Drain Current (mA)

20

0
0

10

VGS(off) Gate-Source Cutoff Voltage (V)

Document Number: 70238

S04028Rev. D ,04-Jun-01

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Forward Transconductance
vs. Drain Current

Gate Leakage Current

100 nA

10
5 mA
VGS(off) = 3 V
gfs Forward Transconductance (mS)

1 mA

10 nA

IG Gate Leakage

0.1 mA
1 nA

TA = 125_C
IGSS @
125_C

100 pA
5 mA
1 mA

10 pA

0.1 mA
TA = 25_C

1 pA

IGSS @ 25_C

0.1 pA

8
TA = 55_C
6
25_C
4
125_C
2

0
0

10

20

0.1

VDG Drain-Gate Voltage (V)

10

ID Drain Current (mA)

Output Characteristics

Output Characteristics
15

10
VGS(off) = 2 V

VGS(off) = 3 V
12

8
VGS = 0 V
6

ID Drain Current (mA)

ID Drain Current (mA)

VDS = 10 V
f = 1 kHz

0.2 V
0.4 V

0.6 V
0.8 V

1.0 V
1.2 V

1.4 V

VGS = 0 V
0.3 V

0.6 V
0.9 V

1.2 V
1.5 V

1.8 V
2

0
2

10

VDS Drain-Source Voltage (V)

10

VDS Drain-Source Voltage (V)

Transfer Characteristics

Transfer Characteristics
10

10
VGS(off) = 2 V

VDS = 10 V

VGS(off) = 3 V

VDS = 10 V

8
ID Drain Current (mA)

ID Drain Current (mA)

TA = 55_C
TA = 55_C
25_C

125_C

25_C
6
125_C
4

0
0

0.4

0.8

1.2

1.6

VGS Gate-Source Voltage (V)

Document Number: 70238

S04028Rev. D ,04-Jun-01

0.6

1.2

1.8

2.4

VGS Gate-Source Voltage (V)

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2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage

Transconductance vs. Gate-Source Voltgage

10

10
VDS = 10 V
f = 1 kHz

VGS(off) = 3 V

gfs Forward Transconductance (mS)

gfs Forward Transconductance (mS)

VGS(off) = 2 V

TA = 55_C
6

25_C

125_C

8
TA = 55_C
6

25_C

4
125_C
2

0
0

0.4

0.8

1.2

1.6

On-Resistance vs. Drain Current

2.4

Circuit Voltage Gain vs. Drain Current

100

TA = 55_C

g fs R L
AV + 1 ) R g
L os
Assume VDD = 15 V, VDS = 5 V

80

240
VGS(off) = 2 V

AV Voltage Gain

rDS(on) Drain-Source On-Resistance ( )

1.8

VGS Gate-Source Voltage (V)

300

180
3 V
120

RL +

60

10 V
ID

VGS(off) = 2 V
40

60

20

3 V
0.1

10

0.1

10

ID Drain Current (mA)

ID Drain Current (mA)

Common-Source Input Capacitance

vs. Gate-Source Voltage

Common-Source Reverse Feedback

Capacitance vs. Gate-Source Voltage

3.0
Crss Reverse Feedback Capacitance (pF)

f = 1 MHz
4
Ciss Input Capacitance (pF)

1.2

0.6

VGS Gate-Source Voltage (V)

VDS = 0 V

VDS = 10 V

f = 1 MHz
2.4

1.8

VDS = 0 V

1.2

VDS = 10 V

0.6

0
0

12

16

VGS Gate-Source Voltage (V)

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7-4

VDS = 10 V
f = 1 kHz

20

12

16

20

VGS Gate-Source Voltage (V)

Document Number: 70238

S04028Rev. D ,04-Jun-01

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance

Forward Admittance

100

100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

bis

10

10
gfs
(mS)

(mS)

gis

bis
1

0.1
100

200

500

0.1
100

1000

f Frequency (MHz)

1000

Output Admittance
10

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

500

f Frequency (MHz)

Reverse Admittance
10

200

brs

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

bos

1
gos

(mS)

(mS)

grs
0.1

0.1

0.01
100

200

500

0.01
100

1000

f Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency

1000

Output Conductance vs. Drain Current

20

VDS = 10 V

VGS(off) = 3 V
gos Output Conductance (mS)

VGS(off) = 3 V
Hz

500

f Frequency (MHz)

20

en Noise Voltage nV /

200

16

12

8
ID = 5 mA
4

VDS = 10 V
f = 1 kHz

16
TA = 55_C
12
25_C
8
125_C
4

ID = IDSS
0
10

100

1k
f Frequency (Hz)

Document Number: 70238

S04028Rev. D ,04-Jun-01

10 k

100 k

0
0.1

10

ID Drain Current (mA)

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