J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

Discrete POWER & Signal Technologies

J111 J112 J113

MMBFJ111 MMBFJ112 MMBFJ113

G

D G S

TO-92
D

SOT-23
Mark: 6P / 6R / 6S

N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.

Absolute Maximum Ratings*

Symbol
VDG VGS IGF TJ ,T stg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA = 25C unless otherwise noted

Parameter

Value
35 - 35 50 -55 to +150

Units
V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J111- J113 350 2.8 125 357

Max
*MMBFJ111 225 1.8 556

Units
mW mW/C C/W C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

N-Channel Switch
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = - 1.0 A, VDS = 0 VGS = - 15 V, VDS = 0 VDS = 5.0 V, ID = 1.0 A J111 J112 J113 - 3.0 - 1.0 - 0.5 - 35 - 1.0 - 10 - 5.0 - 3.0 1.0 V nA V V V nA

ID(off)

Gate-Source Cutoff Voltage

VDS = 5.0 V, VGS = - 10 V

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS 0.1 V, VGS = 0 J111 J112 J113 J111 J112 J113 20 5.0 2.0 30 50 100 mA mA mA

rDS(on)

Drain-Source On Resistance

SMALL-SIGNAL CHARACTERISTICS
Cdg(on) Csg(on) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz 28 5.0 5.0 pF pF pF

*Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%

Typical Characteristics
Common Drain-Source
10 - DRAIN CURRENT (mA) V GS = 0 V
- 0.2 V

Parameter Interactions
r
g fs - TRANSCONDUCTANCE (mmhos) 100
r DS

TA = 25C TYP V GS(off) = - 2.0 V

100

DS

- DRAIN "ON" RESISTANCE ()

8
- 0.4 V

50

50

6
- 0.6 V

20

fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _

20

4
- 0.8 V - 1.0 V

2
- 1.4 V - 1.2 V

10
I DSS

10

0.4 0.8 1.2 1.6 V DS - DRAIN-SOURCE VOLTAGE (V)

5 _

0.5

_ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V)

5 10

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

N-Channel Switch
(continued)

Typical Characteristics

(continued)

Transfer Characteristics
40 I D - DRAIN CURRENT (mA)
VGS(off) = - 3.0 V - 55C

Transfer Characteristics
16 I D - DRAIN CURRENT (mA)
VGS(off) = - 1.6 V - 55C 25C 125C

DS

= 15 V

30

25C 125C VGS(off) = - 2.0 V

12

20

125C 25C - 55C

V GS(off) = - 1.1 V 125C 25C - 55C

10

DS

= 15 V

-1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V)

-0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V)

- TRANSCONDUCTANCE (mmhos)

Transfer Characteristics
- TRANSCONDUCTANCE (mmhos) 30
VGS(off) = - 3.0 V - 55C 25C 125C

Transfer Characteristics
30
V GS(off) = - 1.6 V - 55C

20

V GS(off) = - 2.0 V - 55C 25C 125C

20

25C 125C

V GS(off) = - 1.1 V

10

10

- 55C 25C 125C

V DS = 15 V

V DS = 15 V

fs

-1 -2 VGS - GATE-SOURCE VOLTAGE (V)

-3

fs

-0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V)

r DS - DRAIN "ON" RESISTANCE ( )

On Resistance vs Drain Current

100
V GS(off) TYP = - 2.0V

Normalized Drain Resistance vs Bias Voltage

r DS - NORMALIZED RESISTANCE 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1
V GS(off) @ 5.0V, 10 A

125C

50

25C 125C - 55C V GS(off) TYP = - 7.0V

r DS r DS = VGS 1 -________ V GS(off)

20

25C

r DS @ V GS = 0

- 55C

10

2 ID

5 10 20 - DRAIN CURRENT (mA)

50

100

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

N-Channel Switch
(continued)

Typical Characteristics

(continued)

100

TA = 25C V DG = 15V f = 1.0 kHz

g os - OUTPUT CONDUCTANCE ( mhos)

g fs - TRANSCONDUCTANCE (mmhos)

Transconductance vs Drain Current

Output Conductance vs Drain Current

T A = 25C f = 1.0 kHz V DG = 5.0V
10V 15V 20V 20V 5.0V 5.0V 10V 15V 10V 15V 20V

100

10

V GS(off) = - 5.0V

10

V GS(off) = - 1.4V

V GS(off) = - 3.0V

1
V GS(off) = - 0.85V

V GS(off) = - 2.0V

1 0.1

1 I D - DRAIN CURRENT (mA)

10

0.1 0.01

0.1 I D - DRAIN CURRENT (mA)

10

Capacitance vs Voltage
100

Noise Voltage vs Frequency

100 e n - NOISE VOLTAGE (nV / Hz) 50

C is (C rs ) - CAPACITANCE (pF)

V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz

f = 0.1 - 1.0 MHz

10

10 5
I D = 10 mA I D = 1.0 mA

C is (V DS = 0) C is (VDS = 20) C rs (V DS = 0)

-4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V)

-20

1 0.01

1 10 f - FREQUENCY (kHz)

100

Noise Voltage vs Current

e n - NOISE VOLTAGE (nV / Hz) 100
PD - POWER DISSIPATION (mW)
V DG = 15V

Power Dissipation vs Ambient Temperature

350 300 250 200 150

f = 10 Hz f = 100 Hz f = 1.0 kHz

TO-92

10

SOT-23
100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150

f = 10 kHz f = 100 kHz

1 0.01 I
D

0.1 1 - DRAIN CURRENT (mA)

10

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113

N-Channel Switch
(continued)

Typical Characteristics

(continued)

Switching Turn-On Time vs Gate-Source Voltage

t r(ON) ,t d(ON) - TURN-ON TIME (ns) 25 20 15 10 5 0
t r (ON)

Switching Turn-Off Time vs Drain Current

TURN-OFF TIME (ns) 100 80 60 40 20 0
t d(off) VGS(off) = -2.2V - 4.0V - 7.5V T A = 25C V DD = 3.0V V GS = -12V t (off) t d(off) DEVICE V GS(off) INDEPENDENT

V DD = 3.0V t r APPROX. I D INDEPENDENT V GS(off) = 3.0V T A = 25C I D = 6.6 mA 2.5 mA - 6.0V t d (ON) V GS = -12V

0 V GS(off)

-2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V)

t d(OFF) ,t

OFF -

4 6 8 I D - DRAIN CURRENT (mA)

10