13N60 Series

SEMICONDUCTOR

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Nell High Power Products

N-Channel Power MOSFET

13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.

FEATURES

GD

TO-220F
(13N60AF)

TO-220AB
(13N60A)

RDS(ON) = 0.26 @ VGS = 10V

Ultra low gate charge(40nC max.)

Low reverse transfer capacitance
(C RSS = 3pF typical)
Fast switching capability
100% avalanche energy specified

D (Drain)

Improved dv/dt capability

150C operation temperature

PRODUCT SUMMARY
ID (A)

13

VDSS (V)

600

RDS(ON) ()

0.26 @ V GS = 10V

QG(nC) max.

40

G
(Gate)

S (Source)

ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified)

SYMBOL

TEST CONDITIONS

PARAMETER

VALUE

VDSS

Drain to Source voltage

T J =25C to 150C

600

V DGR

Drain to Gate voltage

R GS =20K

600

V GS
ID

Gate to Source voltage

UNIT

30
T C =25C

13

T C =100C

8.2

Continuous Drain Current

A
I DM

Pulsed Drain current(Note 1)

39

I AR

Avalanche current(Note 1)

4.3

E AR

Repetitive avalanche energy(Note 1)

l AR =4.3A,R GS =50, V GS =10V

1.2

E AS

Single pulse avalanche energy (Note 2)

l AS =4.3A

235

mJ

dv/dt
PD
TJ
T STG
TL

100

MOSFET dv/dt ruggedness

20

Peak diode recovery dv/dt (Note 3)

TO-220AB

Total power dissipation (Derate above 25C)

T C =25C

TO-220F

116(0.93)
34(0.27)

Operation junction temperature

-55 to 150

Storage temperature

-55 to 150

Maximum soldering temperature, for 10 seconds

1.6mm from case

Mounting torque, #6-32 or M3 screw

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Page 1 of 8

W(W/C)

300
10 (1.1)

Note: 1. Repetitive rating: pulse width limited by junction temperature. .

2 . I AS =4.3 A , V DD =50 V , R GS =25 , starting T J = 25 C.
3 . I SD 13 A, di/dt 200 A/s, V DD V (BR)DSS , starting T J = 2 5 C.

V /ns

lbf . in (N . m)

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13N60 Series

SEMICONDUCTOR

Nell High Power Products

THERMAL RESISTANCE
SYMBOL
Rth(j-c)

PARAMETER

Min.

Typ.

1.07

TO-220AB

Thermal resistance, junction to case

C/W
TO-220F

Rth(j-a)

UNIT

Max.

3.7

TO-220AB

62.5

TO-220F

62.5

Thermal resistance, junction to ambient

C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified)

SYMBOL

TEST CONDITIONS

PARAMETER

Min.

Typ.

Max.

UNIT

OFF CHARACTERISTICS
V(BR)DSS

V (BR)DSS/T J
I DSS

Drain to source breakdown voltage

I D = 1mA, V GS = 0V

Breakdown voltage temperature coefficient

I D = 1 m A, V DS =V GS

Drain to source leakage current

600

V
V/C

0.73

V DS =600V, V GS =0V

T C = 25C

10

V DS =480V, V GS =0V

T C =125C

100

Gate to source forward leakage current

V GS = 30V, V DS = 0V

100

Gate to source reverse leakage current

V GS = -30V, V DS = 0V

-100

I GSS

nA

ON CHARACTERISTICS
R DS(ON)

Static drain to source on-state resistance

V GS = 10V, l D = 6.5A

V GS(TH)

Gate threshold voltage

V GS =V DS , I D =250A

Forward transconductance

V DS =40V, I D =6.5A

gfs

0.24
2

0.26

V
S

16.3

DYNAMIC CHARACTERISTICS
C ISS

Input capacitance

C OSS

Output capacitance

C RSS

Reverse transfer capacitance

C OSS

Output capacitance

V DS = 380V, V GS = 0V, f =1MHz

Effective output capacitance

V DS = 0 to 480V, V GS = 0V

C OSS eff
QG

V DS = 100V, V GS = 0V, f =1MHz

Total gate charge

Q GS

Gate to source charge

Q GD

Gate to drain charge (Miller charge)

ESR

Equivalent series resistance (G-S)

1325

1765

50

65

30
145
30.5

V DD = 380V, V GS = 10V
I D = 6.5A, (Note1,2)

pF

40
nC

6.0
9.5

Drain open

2.8

SWITCHING CHARACTERISTICS
t d(ON)
tr
t d(OFF)
tf

Turn-on delay time

Rise time
Turn-off delay time

V DD = 380V, V GS = 10V
I D = 6.5A, R G =4.7 (Note1,2)

Fall time

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Page 2 of 8

14.5

39

10.5

31.5

45

100

10

30

ns

13N60 Series

SEMICONDUCTOR

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Nell High Power Products

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25C unless otherwise specified)
SYMBOL

PARAMETER

VSD
I S (I SD )

TEST CONDITIONS

Min.

Typ.

Max.

UNIT
V

Diode forward voltage

I SD = 6.5A, V GS = 0V

1.2

Continuous source to drain current

Integral reverse P-N junction

diode in the MOSFET

13

D (Drain)

A
I SM

Pulsed source current

G
(Gate)

39
S (Source)

t rr

Reverse recovery time

Q rr

Reverse recovery charge

I SD = 6.5A, V GS = 0V,
dI F /dt = 100A/s

280

ns

3.5

Note: 1. Pulse test: Pulse width 300s, duty cycle 2% .

2. Essentially independent of operating temperature.

ORDERING INFORMATION SCHEME

13 N 60

Current rating, ID
13 = 13A

MOSFET series
N = N-Channel

Voltage rating, VDS

60 = 600V

Package type
A = TO-220AB
AF = TO-220F

TEST CIRCUITS AND WAVEFORMS

Fig.1A Peak diode recovery dv/dt test circuit

D.U.T.

Fig.1B Peak diode recovery dv/dt waverforms

V GS
(Driver)

Period
D=

P.W.

P.W.
Period

V DS

V GS =10V

+
-

l SD
(D.U.T)

l FM , Body Diode forward current

di/dt

l RM
Body Diode Reverse Current
RG

Driver

V GS

Same Type
as D.U.T.

* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test

V DD

V DS
(D.U.T)

Body Diode Recovery dv/dt

V DD

Body Diode

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Forward Voltage Drop

13N60 Series

SEMICONDUCTOR

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TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig.2A Switching test circuit

Fig.2B Switching Waveforms

V DS

RL

90%

V DS
V GS
RG
V DD

D.U.T.

V GS

10%

10V

t d(ON)

t d(OFF)
tR

Pulse Width 1s
Duty Factor 0.1%

Fig.3A Gate charge test circuit

tF

Fig.3B Gate charge waveform

V GS
Same Type as
D.U.T.

50k
12V
0.2F

QG
10V

0.3F
V DS

Q GS

Q GD

V GS
D.U.T.
3mA

Charge

Fig.4A Unclamped lnductive switching test circuit

Fig.4B Unclamped lnductive switching

waveforms

L
V DS

BV DSS
l AS
RG

V DD

l D(t)
V DS(t)

D.U.T.

V DD

10V
tp
Time
tp

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TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics

Fig.2 Transfer characteristics

40

60
V GS

15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V

10

Drain-Current, l D (A)

Drain Current,l D (A)

Top:

Notes:
1. 250s pulse test
2. T C = 25C

10
150C

0.6

25 C
1
Notes:
1. V DS =20V
2. 250s pulse width

10

20

Drain Source voltage, V DS (V)

Gate-Source voltage, V GS (V)

Fig.3 On-Resistance variation vs.

Drain current and Gate voltage

Fig.4 Body diode forward voltage variation vs

Source current and Temperature
100

Reverse drain current, l DR (A)

0.8

0.6

V GS =10V

0.4

V GS =20V

0.2

150C

10

25 C

Notes:
1. V GS =0V
2. 250s pulse Test
1

0
0

10

20

40

30

0.8

0.4

1.4

1.2

Drain current, l D (A)

Source-Drain voltage, V SD (V)

Fig.5 Capacitance characteristics

Fig.6 Gate charge characteristics

10

50000

C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gs
C rss = C gd

10000

C iss

1000

100

C oss

10
Notes:
1. V GS =0V
2. f=1MHz

1
1

0.1

10

C rss

Gate-Source voltage, V GS (V)

Drain-Source On-Resistance, R DS(ON) ()

-55C

0.2

Capacitance (pF)

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13N60 Series

SEMICONDUCTOR

V DS =380V

V DS =480V
6

2
Notes:
1. l D =6.5 A
0

100

600

Drain-Source Voltage, V DS (V)

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V DS =120V

10

20

30

Total gate charge ,Q G (nC)

Page 5 of 8

40

13N60 Series

SEMICONDUCTOR

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Nell High Power Products

Fig.7b Maximum safe operating area
for 13N60AF

Fig.7a Maximum safe operating area

for 13N60A
100

100
Operation in This Area is Limited by R DS(ON)

Operation in This Area is Limited by R DS(ON)

10s

Drain current, l D (A)

Drain current, l D (A)

100s

10
1ms
10ms
DC

0.1

Note:
1. T C = 25C
2. T J = 150C
3. Single Pulse

0.01
0.1

10

100s

10

1ms
10ms

1
DC

0.1

Note:
1. T C = 25C
2. T J = 150C
3. Single Pulse

0.01
0.1

1000

100

10s

10

100

Drain-to-Source voltage, V DS (V)

Drain-to-Source voltage, V DS (V)

Fig.8a Transient thermal response curve for 13N60A

Thermal response, R th(j-c) (t)

2
1
D = 0.5

Thermal response, Rth(j-c)

0.2

Notes:
1.R th(j-c) (t)=1.07C/W Max.
2.Duty factor, D=t 1 /t 2
3.T JM -T C =P DMR th(j-c) (t)

0.1

0.1

0.05
0.02
0.01

PDM

(Single Pulse)

t1
T2

0.01
10 -4

10 -5

10 -3

10 -1

10 -2

Rectangular Pulse Duration, t 1 (sec)

Fig.8b Transient thermal response curve for 13N60AF

Thermal response, R th(j-c) (t)

5
D = 0.5

0.2
0.1
PDM

0.05
t1

0.1

0.02
T2

0.01
Notes:
1.R th(j-c) (t)=3.7C/W Max.
2.Duty factor, D=t 1 /t 2
3.T JM -T C =P DMR th(j-c) (t)

(Single Pulse)

0.01
10 -5

10 -4

10 -3

10 -2

10 -1

10 0

Rectangular Pulse Duration, t 1 (sec)

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10 1

10 2

1000

13N60 Series

SEMICONDUCTOR

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Fig.10 On-resistance variation vs.
temperature

Fig.9 Breakdown voltage variation

vs. temperature
3.0

Drain-source breakdown, BV DSS

1.2

Drain current, l D (A)

2.5
1.1

1.0

0.9

Notes:
1. V GS =0V
2. I D =1mA

0.8
-100

-50

50

100

150

Drain Current, I D (A)

12

0
100

125

150

Case Temperature, T C (C)

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Notes:
1. V GS =10V
2. I D =6.5A
-50

50

100

150

Drain-to-Source voltage, V DS (V)

15

75

1.0

0.0
-100

200

Fig.11 Maximum drain current vs.case

temperature

50

1.5

0.5

Junction temperature, T J (C)

25

2.0

Page 7 of 8

200

13N60 Series

SEMICONDUCTOR

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Nell High Power Products

TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)

4.70 (0.185)
4.44 (0.1754)

3.91 (0.154)
3.74 (0.148)

1.39 (0.055)
1.14 (0.045)

2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)

PIN
2

16.13 (0.635)
15.87 (0.625)
3

4.06 (0.160)
3.56 (0.140)

15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)

1.45 (0.057)
1.14 (0.045)

14.22 (0.560)
13.46 (0.530)

2.67 (0.105)
2.41 (0.095)

0.90 (0.035)
0.70 (0.028)

2.65 (0.104)
2.45 (0.096)

D (Drain)

0.56 (0.022)
0.36 (0.014)

5.20 (0.205)
4.95 (0.195)

G
(Gate)

S (Source)

All dimensions in millimeters(inches)

TO-220F
10.6
10.4

3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8

16.4
15.4

2
1

10
3.3
3.1
13.7
13.5

2.54
TYP

0.9
0.7

0.48
0.44

2.54
TYP

2.85
2.65

4.8
4.6
D (Drain)

G
(Gate)

S (Source)

All dimensions in millimeters

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Page 8 of 8