NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Lead-Free

D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m ID 35A 1. GATE 2. DRAIN 3. SOURCE

G S

ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation
2 1

SYMBOL VGS

LIMITS 20 35 25 120 15 15 5.6 50 35 -55 to 150 275

UNITS V

TC = 25 C TC = 100 C

ID IDM IAR

L = 0.133mH L = 0.05mH TC = 25 C TC = 100 C

EAS EAR PD Tj, Tstg TL

mJ

Operating Junction & Storage Temperature Range Lead Temperature ( /16 from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1

SYMBOL RJC RJA RCS

TYPICAL

MAXIMUM 2.5 75

UNITS

C / W

0.7

Pulse width limited by maximum junction temperature. Duty cycle 1

ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 C 25 1.0 1.5 3.0 250 25 250 nA A V LIMITS UNIT MIN TYP MAX

DEC-23-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Lead-Free

On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 2

ID(ON) RDS(ON) gfs

VDS = 10V, VGS = 10V VGS = 4.5V, ID = 15A VGS = 10V, ID = 15A VDS = 15V, ID = 30A

35 23 15.5 14 28 31 20

A m S

Ciss Coss Crss Qg Qgs Qgd

2

530 VGS = 0V, VDS = 25V, f = 1MHz 200 60 8.4 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 15A 2.5 6.4 6.2 VDD = 15V ID 15A, VGS = 10V, RGS = 12.7 11 23 18

700 275 90 11 3.1 9.6 9.3 17 34 27 nS nC pF

Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time2 Turn-Off Delay Time Fall Time2

td(on) tr

td(off) tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge
1 2

IS ISM VSD trr Qrr IF = IS, VGS = 0V 1.1 15 2

35 120 1.4 18 3

A V nS nC

Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH P2003BDG, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

DEC-23-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Lead-Free

TYPICAL CHARACTERISTICS
ON-REGION CHARACTERISTIC
60 7.0V 6.0V 4.5V
R DS(ON) ,NORMALIZED DRAIN - SOURCE ON - RESISTANCE

ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE

3.0 VGS = 4.0V 2.5 2.0 4.5V 1.5 1.0 5.0V 6.0V 7.0V 10V

55 ID ,DRAIN - SOURCE CURRENT( A ) 50 45 40 35 30 25 20 15 10 5 0

10.0V

5.0V

4.0V

3.5V VGS =3.0V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS,DRAIN- SOURCE VOLTAGE ( V ) 4.5 5.0

0.5

10

20 30 40 I D ,DRAIN CURRENT( A )

50

60

ON- RESISTANCE VARIATION WITH TEMPERATURE

1.8 R ,NORMALIZED DRAIN - SOURCE ON - RESISTANCE 1.6 1.4 I D = 15A

ON-RESISTANCE VARIATION WITH GATE-TO-SOURCE VOLTAGE 0.06 ID = 15A R DS(ON) ,ON-RESISTANCE(OHM) 0.05

VGS= 10V

0.04

1.2 1.0

DS(ON)

0.03 TA = 125C 0.02 TA = 25C

0.8

0.6 -50

-25

25 50 75 100 125 0 Tj ,JUNCTION TEMPERATURE( C )

150

175

0.01

6 8 4 VGS,GATE TO SOURCE VOLTAGE

10

TRANSFER CHARACTERISTICS
60

60 I S,REVERSE DRAIN CURRENT( A )

BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE
VGS= 0V

VDS =10V 50 I D,DRAIN CURRENT( A )

TA = -55C

25C 125C

10 TA = 125C 25C

40 30

1 0.1

-55C

20 10

0.01

0.001 0.0001 0 0.8 0.2 1.0 1.2 0.4 0.6 VSD ,BODY DIODE FORWARD VOLTAGE( V ) 1.4

3 4 2 VGS,GATE TO SOURCE VOLTAGE

DEC-23-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Lead-Free

GATE CHARGE CHARACTERISTICS

10 V GS ,GATE - SOURCE VOLTAGE ( V ) I D = 15A 8 VDS = 5V 10V 6 15V

10000

CAPACITANCE CHARACTERISTICS

CAPACITANCE( pF )

1000 Ciss Coss 100

Crss

8 Qg ,GATE CHARGE ( nC )

12

16

10

f = 1MHZ VGS= 0V 1 5

10

15

20

25

30

VDS ,DRAIN TO SOURCE VOLTAGE ( V )

SINGLEPULSE M AXIM UMPOW ERDISSIPATION

2400 SINGLE PULSE R = 2 .5C/W TC = 25C
JC

10

MAXIMUM SAFE OPERATING AREA

2000 POWER( W )

I D,DRAIN CURRENT( A )

1600

10

2
n)

35.0S
R ds(o it Lim
1m s 10m s

10 0 S

1200 800 400

10

DC

0 0.01

0.1
1

10 1 SINGLE PULSE TIM E( SEC)

100

1000

10 -1 10

VGS= 10V SINGLE PULSE R = 2.5 C/W JC Tc = 25 C

10 10 VDS,DRAIN - SOURCE VOLTAGE

10

TRANSIENT THERMAL RESPONSE CURVE

10 TRANSIENT THERMAL RESISTANCE r ( t ) ,NORMALIZED EFFECTIVE

10

D=0.5 0.20 0.10

10

-1

0.05
-2

10

0.02 0.01
P(pk)

t1

10

-3

t2

Single pulse 10
-4

1.RJC (t)=r(t)*R 2.R JC = 2.5 C/W 3.T j + TC = P * R JC (t) t1 4.Duty Cycle,D = t2

10

-7

10

-6

10

-5

10 10 t1 , TIME( ms )

-4

-3

10

-2

10

-1

10

DEC-23-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Lead-Free

TO-252 (DPAK) MECHANICAL DATA

mm Dimension Min. A B C D E F G 9.35 2.2 0.45 0.89 0.45 0.03 5.2 Typ. Max. 10.4 2.4 0.6 1.5 0.69 0.23 6.2 H I J K L M N Dimension Min. 0.89 6.35 5.2 0.6 0.5 3.96 4.57 Typ. Max. 2.03 6.80 5.5 1 0.9 5.18 mm

G L

DEC-23-2004