NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

P07D03LVG
SOP-8 Lead-Free

PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 20m[ ID 7A G : GATE D : DRAIN S : SOURCE

ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16 from case for 10 sec.)
1 1

SYMBOL VDS VGS

LIMITS 30 20 7 6 40 2 1.3 -55 to 150 275

UNITS V V

TC = 25 C TC = 70 C

ID IDM

TC = 25 C TC = 70 C

PD Tj, Tstg TL

THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient

1 2

SYMBOL RJA

TYPICAL

MAXIMUM 62.5

UNITS C / W

Pulse width limited by maximum junction temperature. Duty cycle 1%

ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
1

LIMITS UNIT MIN TYP MAX

V(BR)DSS VGS(th) IGSS IDSS ID(ON)

VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 C VDS = 5V, VGS = 10V

30 0.7 1 1.4

V 100 nA 1 10 A A

25

Jun-29-2004

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

VGS = 2.5V, ID = 5A RDS(ON) VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A

P07D03LVG
SOP-8 Lead-Free
40 23 18 16 48 30 25 S m[

Drain-Source On-State 1 Resistance

Forward Transconductance

gfs

VDS = 15V, ID = 5A DYNAMIC

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 2

Ciss Coss Crss Qg Qgs Qgd

2

830 VGS = 0V, VDS = 15V, f = 1MHz 185 80 9 VDS = 0.5V(BR)DSS, VGS = 5V, ID = 7A 2.8 3.1 5.7 VDS = 15V ID 1A, VGS = 10V, RGEN = 6[ 10 18 5 nS 13 nC pF

Gate-Source Charge Gate-Drain Charge

2 2

Turn-On Delay Time Rise Time

td(on) tr

Turn-Off Delay Time Fall Time

2

td(off) tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current
3 1

IS ISM VSD trr Qrr IF = 1A, VGS = 0V IF = 5A, dlF/dt = 100A / S 15.5 7.9

3 6 1

A V nS nC

Forward Voltage

Reverse Recovery Time Reverse Recovery Charge

1 2

Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH P07D03LVG, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name

Jun-29-2004

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

P07D03LVG
SOP-8 Lead-Free

TYPICAL PERFORMANCE CHARACTERISTICS

Jun-29-2004

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

P07D03LVG
SOP-8 Lead-Free

Jun-29-2004

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

P07D03LVG
SOP-8 Lead-Free

SOIC-8(D) MECHANICAL DATA

mm Dimension Min. A
B C D E F G

mm Dimension Max. 5.0 4.0 6.2 0.51 H I J K L 1.75

0.25

Typ. 4.9 3.9 6.0 0.445 1.27

Min. 0.5 0.18

Typ. 0.715 0.254 0.22

Max. 0.83 0.25

4.8 3.8 5.8 0.38

1.35 0.1

1.55
0.175

M
N

F D E G I H K

Jun-29-2004