P3057LCG

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM

SOT-89
Lead-Free

D
RDS(ON)

ID

25

50m

6A

1. GATE
2. DRAIN
3. SOURCE

G
1

V(BR)DSS

PRODUCT SUMMARY

S
ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
TC = 25 C

Continuous Drain Current

Pulsed Drain Current

SYMBOL

LIMITS

UNITS

VGS

20

ID

TC = 100 C

IDM
TC = 25 C

Power Dissipation

20
3

PD

TC = 100 C

Operating Junction & Storage Temperature Range

1

Lead Temperature ( /16 from case for 10 sec.)

1.2

Tj, Tstg

-55 to 150

TL

275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

Junction-to-Case

RJC

18

Junction-to-Ambient

RJA

160

UNITS
C / W

Pulse width limited by maximum junction temperature.

Duty cycle 1%

ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS
UNIT
MIN TYP MAX

STATIC
Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

25

VGS(th)

VDS = VGS, ID = 250A

0.8

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Current1

ID(ON)

Drain-Source On-State
Resistance1

RDS(ON)

Gate Threshold Voltage

Forward Transconductance1

1.2

2.5

250 nA

VDS = 20V, VGS = 0V

25

VDS = 20V, VGS = 0V, TJ = 125 C

250

VDS = 10V, VGS = 10V

gfs

A
A

VGS = 4.5V, ID = 3A

70

115

VGS = 10V, ID = 6A

48

85

VDS = 15V, ID = 6A

16

m
S

Jun-29-2004

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM

P3057LCG
SOT-89
Lead-Free

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

60

Qg

15

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

Turn-On Delay Time

Rise Time2
Turn-Off Delay Time2
Fall Time2

450
VGS = 0V, VDS = 15V, f = 1MHz

Qgs

VDS = 0.5V(BR)DSS, VGS = 10V,

2.0

Qgd

ID = 6A

7.0

td(on)

pF

200

nC

6.0

tr

VDS = 15V, RL = 1

6.0

td(off)

ID 12A, VGS = 10V, RGS = 2.5

20

tf

nS

5.0

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C)

Continuous Current

IS

2.3

Pulsed Current3

ISM

Forward Voltage1

VSD

IF = IS, VGS = 0V

1.5

A
V

Pulse test : Pulse Width 300 sec, Duty Cycle 2%.

Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
2

REMARK: THE PRODUCT MARKED WITH P3057G, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

Jun-29-2004

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P3057LCG
SOT-89
Lead-Free

Jun-29-2004

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM

P3057LCG
SOT-89
Lead-Free

SOT-89 MECHANICAL DATA

Dimension

mm
Min.

Typ.

Max.

4.3

4.5

4.7

1.6

1.7

0.4

Dimension

mm
Min.

Typ.

Max.

1.4

1.5

1.6

1.8

2.8

3.0

3.2

0.5

0.6

1.3

1.5

1.7

2.4

2.5

2.6

3.8

4.2

4.6

0.8

1.2

1.4

0.3

0.4

0.5

0.4

0.45

0.5

0.4

0.5

0.6

Jun-29-2004