EMB90N08A

NChannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary:
BVDSS
RDSON(MAX.)

80V
85m

ID

10A

UIS,Rg100%Tested
PbFreeLeadPlating&HalogenFree

ABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)
PARAMETERS/TESTCONDITIONS
GateSourceVoltage

SYMBOL

LIMITS

UNIT

VGS

20

TC=25C

ContinuousDrainCurrent

10

ID

TC=100C

PulsedDrainCurrent1

IDM

40

AvalancheCurrent

IAS

12

L=0.1mH,ID=12A,RG=25

EAS

7.2

L=0.05mH

EAR

3.6

AvalancheEnergy
2

RepetitiveAvalancheEnergy
PowerDissipation

TC=25C

mJ

30

PD

TC=100C

12

OperatingJunction&StorageTemperatureRange

Tj,Tstg

55to150

THERMALRESISTANCERATINGS
THERMALRESISTANCE
JunctiontoCase

SYMBOL

TYPICAL

MAXIMUM

RJC

4.2

UNIT

C/W
JunctiontoAmbient

RJA

Pulsewidthlimitedbymaximumjunctiontemperature.

Dutycycle1

62.5

2012/7/24

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EMB90N08A

ELECTRICALCHARACTERISTICS(TC=25C,UnlessOtherwiseNoted)

PARAMETER

SYMBOL

TESTCONDITIONS

LIMITS
MIN TYP

UNIT
MAX

STATIC
DrainSourceBreakdownVoltage

V(BR)DSS

VGS=0V,ID=250A

80

GateThresholdVoltage

VGS(th)

VDS=VGS,ID=250A

1.0

1.7

3.0

GateBodyLeakage

IGSS

VDS=0V,VGS=20V

100

nA

ZeroGateVoltageDrainCurrent

IDSS

VDS=64V,VGS=0V

VDS=60V,VGS=0V,TJ=125C

25

ID(ON)

VDS=5V,VGS=10V

10

RDS(ON)

VGS=10V,ID=10A

73

85

VGS=5V,ID=6A

90

110

VDS=5V,ID=10A

10

OnStateDrainCurrent1
1

DrainSourceOnStateResistance

ForwardTransconductance1

gfs

A
m
S

DYNAMIC
InputCapacitance

Ciss

620

OutputCapacitance

Coss

VGS=0V,VDS=30V,f=1MHz

44

ReverseTransferCapacitance

Crss

37

1,2

TotalGateCharge
1,2

GateSourceCharge

Qg

12

Qgs

VDS=40V,VGS=10V,

1.2

3.3

ID=10A

GateDrainCharge1,2

Qgd

TurnOnDelayTime1,2

td(on)

tr

VDS=40V,

6.5

td(off)

ID=1A,VGS=10V,RGS=6

12

tf

7.5

1,2

RiseTime
1,2

TurnOffDelayTime
FallTime1,2

pF

nC

nS

SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(TC=25C)
ContinuousCurrent

IS

10

PulsedCurrent3

ISM

40

ForwardVoltage1

VSD

IF=IS,VGS=0V

1.3

ReverseRecoveryTime

trr

IF=10A,dlF/dt=100A/S

100

nS

ReverseRecoveryCharge

Qrr

480

nC

Pulsetest:PulseWidth300sec,DutyCycle2.

Independentofoperatingtemperature.

Pulsewidthlimitedbymaximumjunctiontemperature.

2012/7/24

p.2


Ordering&MarkingInformation:

EMB90N08A

DeviceName:EMB90N08AforDPAK(TO252)

B90
N08
ABCDEFG

2012/7/24

B90N08:DeviceName
ABCDEFG:DateCode

p.3

EMB90N08A

TYPICALCHARACTERISTICS

OnResistanceVariationwithDrainCurrentandGateVoltage

OnRegionCharacteristics

40

1.8

8V 7V

V=10V
GS

V=5.0V
GS
RNormalized
DS(ON)
DrainSourceOnResistance

6V

32
IDrainCurrent(A)
D

5.5V

24

16
5V

1.6
5.5V
1.4
6.0V

3
6
VDrainSourceVoltage(V)
DS

8.0V
10V

1.0

0.8

12

32

40

0.21

I=10A
D
V GS
=10V

I=5A
D
0.18
ROnResistance(
)
DS(ON)

1.8
1.6
1.4
1.2
1.0
0.8

0.15
0.12
T=125C
A

0.09

T=25C
A

0.06
0.03

0.6
0.4
50

25

75
50
0
25
100
TJunctionTem
perature(C)
J

125

150

6
8
VGateSourceVoltage(V)
GS

10

BodyDiodeForwardVoltageVariationwith
SourceCurrentandTemperature

TransferCharacteristics
100

25
V=5V
DS

GS
V=0V

25C

15

IsReverseDrainCurrent(A)

T=55C
A

20
IDrainCurrent(A)
D

16
24
IDrainCurrent(A)
D

OnResistanceVariationwithGateSourceVoltage

O nResistanceV ariationw ithTem perature

2.2
2.0

7.0V

1.2

RNormalized
DS(on)
DrainSourceOnResistance

125C

10

10
T=125C
A

25C

0.1

55C

0.01
0.001

0.0001

0
2

2012/7/24

5
4
VGateSourceVoltage(V)
GS

0.6
0.2
0.4
0.8
VBodyDiodeForwardVoltage(V)
SD

1.0

1.2

p.4

CapacitanceCharacteristics

GateChargeCharacteristics

10

1000

I=10A
D
VGateSourceVoltage(V)
GS

f=1MHz
V=0V
GS

900
800

V=20V
DS

Capacitance(pF)

700
40V

Ciss

600
500
400
300
200

Coss

100
0
4

6
8
10
QGateCharge(nC)
g

10

S (O
R D

10
1m

10

10
DC

0m

0u

50

20
30
40
VDrainSourceVoltage(V)
DS

60

SinglePulseMaximumPowerDissipation
3000

SinglePulse
JC

R=4.2C/W

T=25C
C

it

10
IDrainCurrent(A)
D

10

uS

2500

2000

Power(W)

im
)L
N

Crss

14

12

M a x im u m S a f e O p e r a t i n g A r e a

100

1500

1000
0 .1

500

V G=
1 0 V
S
S in g l e P u ls e
R
J C = 4 .2 C / W
T C = 2 5 C

0 .0 1
1

1000

100
10
V DS D r a i n S o u r c e V o lt a g e ( V )

0.01

0.1

10

100

1000

SinglePulseTime(sec)

TransientThermalResponseCurve

10

r(t),NormalizedEffective
TransientThermalResistance

EMB90N08A

2012/7/24

D=0.5
0.2
10

Note:

1.RJC(t)=4.2C/WMax.
2.DutyCycle,D=t1/t2
3.TJMTC=PDM*RJC(t)

0.1

0.05
0.02
0.01
10

PDM
t1

singlepulse

10

10

t2

10

10

10

10

10

t1,Time(sec)

p.5

OutlineDrawing

Dimensioninmm

A
C

D2

L1

B1

B2

D3

E2

L2

Dimension

EMB90N08A

L3
A1

A1

B1

B2

D2

D3

E2

L1

L2

L3

Min.

2.10

0.95

0.30

0.40

0.60

0.40

5.30

6.70

2.20

6.40

4.80

9.20

0.89

0.90

0.50

0.00

2.10

Max.

2.50

1.30

0.85

0.94

1.00

0.60

6.20

7.30

3.00

6.70

5.45

10.15

1.70

1.65

1.10

0.30

2.50

7.00

7.00

2.00

Footprint

2.50

1.50

2.3

2.3

2012/7/24

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