SUD40N03-18P

New Product

Vishay Siliconix

N-Channel 30-V (D-S) 175_C MOSFET

PRODUCT SUMMARY
VDS (V)
30

rDS(on) (W)
0.018 @ VGS = 10 V 0.027 @ VGS = 4.5 V

ID (A)a
"40 "34

TO-252

G Drain Connected to Tab G D S

Top View Order Number: SUD40N03-18P S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

Limit
30 "20 "40 "28 "100 40 62.5c 7.5b 55 to 175

Unit
V

W _C

THERMAL RESISTANCE RATINGS

Parameter
Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1 x1 FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71086 S-63636Rev. A, 08-Nov-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State

Symbol
RthJA RthJC RthJL

Typical
17 50 2 4

Maximum
20 60 2.4 4.8

Unit
_C/W

_C/W

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SUD40N03-18P
Vishay Siliconix
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A
b Drain-Source On-State Resistance D i S O S R i

Symbol

Test Condition

Min

Typa

Max

Unit

30 V 1.0 "100 1 50 40 0.014 0.018 0.029 0.021 10 0.027 S W nA mA A

rDS(on)

VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 10 A

Forward Transconductanceb

gfs

VDS = 15 V, ID = 20 A

Dynamica
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V V, , RL = 0 0.37 37 W ID ^ 40 A, A VGEN = 10 V V, RG = 2 2.5 5W VDS = 15 V, V, ID = 40 A V VGS = 10 V VGS = 0 V, V VDS = 25 V V, F = 1 MH MHz 1300 340 95 19 5 3 8 8.5 17 6 12 13 ns 25 9 30 nC C pF F

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Continuous Current Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time IS ISM VSD trr IF = 100 A, VGS = 0 V IF = 40 A, di/dt = 100 A/ms 30 40 A 80 1.5 50 V ns

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature.

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Document Number: 71086 S-63636Rev. A, 08-Nov-99

SUD40N03-18P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160 VGS = 10 thru 8 V 120 I D Drain Current (A) I D Drain Current (A) 6V 6V 120 25_C 125_C 80 160 TC = 55_C

Vishay Siliconix

Transfer Characteristics

80 5V

40

4V

40

2, 3 V 0 0 2 4 6 8 10 0 0 2 4 6 8 10

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

Transconductance
60 TC = 55_C 50 g fs Transconductance (S) 25_C 125_C r DS(on) On-Resistance ( W ) 0.05 0.06

On-Resistance vs. Drain Current

40

0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02

30

20

10

0.01

0 0 20 40 60 80 100 120

0 0 20 40 60 80 100 120

ID Drain Current (A)

ID Drain Current (A)

Capacitance
1800 20

Gate Charge

V GS Gate-to-Source Voltage (V)

1500 Ciss C Capacitance (pF) 1200

16

VDS = 15 V ID = 40 A

12

900

600

Coss Crss

300

0 0 5 10 15 20 25 30

0 0 10 20 30 40

VDS Drain-to-Source Voltage (V)

Qg Total Gate Charge (nC)

Document Number: 71086 S-63636Rev. A, 08-Nov-99

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SUD40N03-18P
Vishay Siliconix
New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature
2.0 VGS = 10 V ID = 40 A r DS(on) On-Resistance ( W ) (Normalized) 1.6 I S Source Current (A) TJ = 175_C TJ = 25_C 10 100

Source-Drain Diode Forward Voltage

1.2

0.8

0.4

0 50

1 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ Junction Temperature (_C)

VSD Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
50 500 10, 100 ms Limited by rDS(on)

Safe Operating Area

40 I D Drain Current (A) I D Drain Current (A)

100

30

10 1 ms 10 ms 100 ms 1s dc

20

10

TC = 25_C Single Pulse

0 0 25 50 75 100 125 150 175 TC Case Temperature (_C)

0.1 0.1 1 10 100 VDS Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2 1 Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.02 0.05 Single Pulse

0.01 104 103 102 101 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 71086 S-63636Rev. A, 08-Nov-99 1 10 30

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