SUD50N04-05L

New Product

Vishay Siliconix

N-Channel 40-V (D-S), 175_C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V)
40

FEATURES
ID (A)c
115 102

rDS(on) (W)
0.0054 @ VGS = 10 V 0.0069 @ VGS = 4.5 V

D TrenchFETr Power MOSFETS D 175_C Junction Temperature

APPLICATIONS
D Automotive Such As: High-Side Switch Motor Drives Valve Drives
D

TO-252

G Drain Connected to Tab G D S S N-Channel MOSFET

Top View Ordering Information: SUD50N04-05LE3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TC = 25_C TC = 100_C

Symbol
VDS VGS ID IDM IAS EAS PD TJ, Tstg

Limit
40 "20 115c 81c 100 50 125 136 55 to 175

Unit
V

mJ W _C

THERMAL RESISTANCE RATINGS

Parameter
Junction-to-Ambientb J ti t A bi t Junction-to-Case t v 10 sec Steady State

Symbol
RthJA RthJC

Typical
15 40 0.85

Maximum
18 50 1.1

Unit
_C/W C/W

Notes: a. Duty cycle v 1%. b. Surface mounted on 1 FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72786 S-40444Rev. A, 15-Mar-04 www.vishay.com

SUD50N04-05L
Vishay Siliconix
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 0.0055 80 50 0.0044 0.0054 0.0083 0.0130 0.0069 S W 40 1 3 "100 1 50 150 A m mA V nA

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 20 V, RL = 0.4 W ID ] 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 20 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 5600 590 365 90 19 19 1.6 15 20 65 11 25 30 100 20 ns W 135 nC pF

Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec

Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b

Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/ms 0.90 30 50 100 1.50 45 A V ns

Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

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Document Number: 72786 S-40444Rev. A, 15-Mar-04

SUD50N04-05L
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120 VGS = 10 thru 5 V 100 I D Drain Current (A) 80 60 40 20 0 0 2 4 6 8 10 VDS Drain-to-Source Voltage (V) 4V 100 I D Drain Current (A) 80 60 40 20 0 0.0 120

Vishay Siliconix

Transfer Characteristics

TC = 125_C 25_C

3V

55_C 3.0 3.5 4.0 4.5

0.5

1.0

1.5

2.0

2.5

VGS Gate-to-Source Voltage (V)

Transconductance
200 TC = 55_C r DS(on) On-Resistance ( ) 160 g fs Transconductance (S) 25_C 125_C 0.008 0.010

On-Resistance vs. Drain Current

120

0.006

VGS = 4.5 V VGS = 10 V

80

0.004

40

0.002

0 0 10 20 30 40 50 60 VGS Gate-to-Source Voltage (V) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 Crss 8 16 24 32 40 Coss Ciss V GS Gate-to-Source Voltage (V)

0.000 0 20 40 60 80 100 120 ID Drain Current (A) 10 VDS = 20 V ID = 50 A

Capacitance

Gate Charge

C Capacitance (pF)

0 0 20 40 60 80 100 VDS Drain-to-Source Voltage (V) Qg Total Gate Charge (nC)

Document Number: 72786 S-40444Rev. A, 15-Mar-04

www.vishay.com

SUD50N04-05L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 20 A I S Source Current (A)

100

Source-Drain Diode Forward Voltage

1.7 rDS(on) On-Resiistance (Normalized)

TJ = 150_C TJ = 25_C 10

1.4

1.1

0.8

0.5 50

25

25

50

75

100

125

150

175

1 0.3 0.6 0.9 1.2 1.5 VSD Source-to-Drain Voltage (V)

TJ Junction Temperature (_C)

THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
125

Safe Operating Area

200 100 Limited by rDS(on) 10 ms 100 ms

100 I D Drain Current (A) I D Drain Current (A) 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 50 TC Case Temperature (_C) VDS Drain-to-Source Voltage (V)

75

10

50 Limited By Package

25

2 1
Normalized Effective Transient Thermal Impedance

Normalized Thermal Transient Impedance, Junction-to-Case

Duty Cycle = 0.5 0.2 0.1

0.1
0.02 0.05 Single Pulse

0.01
104 103 102 Square Wave Pulse Duration (sec) 101 1

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Document Number: 72786 S-40444Rev. A, 15-Mar-04