SUB45N03-13L

Vishay Siliconix

N-Channel 30-V (D-S), 175_C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V)
30

rDS(on) (W)
0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V

ID (A)
45a 45a

TO-263

DRAIN connected to TAB

D S

Top View S SUB45N03-13L N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C

Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg

Limit
30 "10 45a 34a 100 45 100 88c 3.75 55 to 175

Unit
V

mJ W _C

THERMAL RESISTANCE RATINGS

Parameter
Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71739 S-05011Rev. F, 29-Oct-01 www.vishay.com PCB Mountd

Symbol
RthJA RthJC

Limit
40 1.7

Unit
_C/W _

SUB45N03-13L
Vishay Siliconix

MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 45 A Drain-Source On-State Resistancea VGS = 10 V, ID = 45 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 45 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 45 A 20 45 0.01 0.0155 0.02 0.0145 0.013 0.02 0.026 0.02 S W 30 1 3 "100 1 50 150 A m mA V nA

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.33 W ID ] 45 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 10 V, ID = 45 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2730 450 220 45 8.5 8 11 9 38 11 20 20 70 20 ns 70 nC pF

Gate-Drain Chargec Turn-On Delay Timec Rise Timec

Turn-Off Delay Timec Fall Timec

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/ms m IF = 45 A, VGS = 0 V 1 35 1.7 0.03 45 A 100 1.3 70 V ns A mC

Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. e. Guaranteed by design, not subject to production testing. b. Independent of operating temperature.

www.vishay.com

Document Number: 71739 S-05011Rev. F, 29-Oct-01

SUB45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120 VGS = 10 thru 6 V 100 5V 80 90 I D Drain Current (A) I D Drain Current (A) 60

Transfer Characteristics

60 4V

40 TC = 125_C 20 25_C 0 55_C 3 4 5

30 3V 0 0 2 4 6 8 10

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

Transconductance
80 TC = 55_C 60 25_C r DS(on) On-Resistance ( W ) 0.04 0.05

On-Resistance vs. Drain Current

g fs Transconductance (S)

125_C 40

0.03

0.02 VGS = 4.5 V VGS = 10 V 0.01

20

0 0 10 20 30 40 50 60

0.00 0 20 40 ID Drain Current (A) 60 80

VGS Gate-to-Source Voltage (V)

Capacitance
4000 10

Gate Charge

Ciss C Capacitance (pF) 3000

V GS Gate-to-Source Voltage (V)

VGS = 15 V ID = 45 A

2000

1000 Crss 0 0 6 12

Coss

0 18 24 30 0 10 20 30 40 50

VDS Drain-to-Source Voltage (V) Document Number: 71739 S-05011Rev. F, 29-Oct-01

Qg Total Gate Charge (nC) www.vishay.com

SUB45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0 VGS = 10 V ID = 45 A r DS(on) On-Resistance (W) (Normalized) I S Source Current (A) TJ = 150_C TJ = 25_C 10 100

Source-Drain Diode Forward Voltage

1.5

1.0

0.5 50

1 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5

TJ Junction Temperature (_C)

VSD Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
60 200 100 10 ms 100 ms

Safe Operating Area

50 I D Drain Current (A) I D Drain Current (A)

Limited by rDS(on)

40

30

10

1 ms

20

10

TC = 25_C Single Pulse

10 ms 100 ms dc

0 0 25 50 75 100 125 150 175

1 0.1 1 10 100

TC Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

VDS Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 105 104 103 102 101 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71739 S-05011Rev. F, 29-Oct-01