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2N2219A 2N2222A: High Speed Switches
2N2219A 2N2222A: High Speed Switches
2N2222A
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
TO-18
TO-39
T stg
Tj
Parameter
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Total Dissipation at T amb 25 o C
for 2N2219A
for 2N2222A
at T C 25 o C
for 2N2219A
for 2N2222A
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
75
40
6
0.6
0.8
Unit
V
V
V
A
A
0.8
0.5
W
W
3
1.8
W
W
-65 to 175
175
o
o
C
C
1/7
2N2219A / 2N2222A
THERMAL DATA
R thj-case
R thj-amb
Max
Max
TO-39
TO-18
50
187.5
83.3
300
o
o
C/W
C/W
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
10
10
nA
A
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 60 V
V CB = 60 V
I CEX
Collector Cut-off
Current (V BE = -3V)
V CE = 60 V
10
nA
I BEX
V CE = 60 V
20
nA
I EBO
V EB = 3 V
10
nA
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 10 A
75
V (BR)CEO Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
40
V (BR)CBO
T j = 150 o C
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 A
V CE(sat)
Collector-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
V BE(sat)
Base-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
0.6
DC Current Gain
I C = 0.1 mA
V CE = 10 V
I C = 1 mA
V CE = 10 V
I C = 10 mA
V CE = 10 V
I C = 150 mA
V CE = 10 V
I C = 500 mA
V CE = 10 V
I C = 150 mA
V CE = 1 V
I C = 10 mA
V CE = 10 V
T amb = -55 o C
35
50
75
100
40
50
h FE
V
V
1.2
2
V
V
300
35
hfe
I C = 1 mA
I C = 10 mA
fT
Transition Frequency
I C = 20 mA
f = 100 MHz
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V
f = 100KHz
25
pF
C CBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
pF
R e(hie)
I C = 20 mA
f = 300MHz
60
2/7
0.3
1
V CE = 10 V
V CE = 10 V
f = 1KHz
f = 1KHz
V CE = 20 V
V CE = 20 V
50
75
300
375
300
MHz
2N2219A / 2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
NF
Noise Figure
I C = 0.1 mA V CE = 10 V
f = 1KHz
R g = 1K
hie
Input Impedance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
h re
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
h oe
Output Admittance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
t d
Delay Time
V CC = 30 V
I B1 = 15 mA
t r
Rise Time
V CC = 30 V
I B1 = 15 mA
t s
Storage Time
t f
r bb C bc
Min.
Typ.
Max.
4
2
0.25
Unit
dB
8
1.25
k
k
8
4
10 -4
-4
10
35
200
S
S
I C = 150 mA
V BB = -0.5 V
10
ns
I C = 150 mA
V BB = -0.5 V
25
ns
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
225
ns
Fall Time
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
60
ns
Feedback Time
Constant
I C = 20 mA V CE = 20 V
f = 31.8MHz
150
ps
5
25
3/7
2N2219A / 2N2222A
Test Circuit fot td, tr.
PULSE GENERATOR :
tr 20 ns
PW 200 ns
ZIN = 50
TO OSCILLOSCOPE
tr 5.0 ns
ZIN < 100 K
CIN 12 pF
PULSE GENERATOR :
PW 10 s
ZIN = 50
TC 5.0 ns
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 K
CIN 12 pF
4/7
2N2219A / 2N2222A
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
0.49
0.019
5.3
0.208
4.9
0.193
5.8
0.228
2.54
0.100
1.2
0.047
1.16
0.045
45o
45o
L
C
0016043
5/7
2N2219A / 2N2222A
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
0.49
0.019
6.6
0.260
8.5
0.334
9.4
0.370
5.08
0.200
1.2
0.047
0.9
0.035
45o (typ.)
P008B
6/7
2N2219A / 2N2222A
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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